JPWO2025134202A5 - - Google Patents

Info

Publication number
JPWO2025134202A5
JPWO2025134202A5 JP2025564641A JP2025564641A JPWO2025134202A5 JP WO2025134202 A5 JPWO2025134202 A5 JP WO2025134202A5 JP 2025564641 A JP2025564641 A JP 2025564641A JP 2025564641 A JP2025564641 A JP 2025564641A JP WO2025134202 A5 JPWO2025134202 A5 JP WO2025134202A5
Authority
JP
Japan
Prior art keywords
electrode
optical semiconductor
semiconductor element
insulating film
pad electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025564641A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2025134202A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/045330 external-priority patent/WO2025134202A1/ja
Publication of JPWO2025134202A1 publication Critical patent/JPWO2025134202A1/ja
Publication of JPWO2025134202A5 publication Critical patent/JPWO2025134202A5/ja
Pending legal-status Critical Current

Links

JP2025564641A 2023-12-18 2023-12-18 Pending JPWO2025134202A1 (https=)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/045330 WO2025134202A1 (ja) 2023-12-18 2023-12-18 光半導体装置

Publications (2)

Publication Number Publication Date
JPWO2025134202A1 JPWO2025134202A1 (https=) 2025-06-26
JPWO2025134202A5 true JPWO2025134202A5 (https=) 2026-04-15

Family

ID=96137469

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025564641A Pending JPWO2025134202A1 (https=) 2023-12-18 2023-12-18

Country Status (2)

Country Link
JP (1) JPWO2025134202A1 (https=)
WO (1) WO2025134202A1 (https=)

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH02181987A (ja) * 1989-01-06 1990-07-16 Nec Corp 半導体レーザ
JP3966067B2 (ja) * 2002-04-26 2007-08-29 富士ゼロックス株式会社 表面発光型半導体レーザ素子およびその製造方法
JP4967565B2 (ja) * 2006-09-25 2012-07-04 富士通株式会社 光半導体素子及びその製造方法
JP5321886B2 (ja) * 2009-02-06 2013-10-23 ソニー株式会社 半導体素子
JP2012023065A (ja) * 2010-07-12 2012-02-02 Nippon Telegr & Teleph Corp <Ntt> 半導体素子

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