JPWO2025046720A1 - - Google Patents

Info

Publication number
JPWO2025046720A1
JPWO2025046720A1 JP2024513175A JP2024513175A JPWO2025046720A1 JP WO2025046720 A1 JPWO2025046720 A1 JP WO2025046720A1 JP 2024513175 A JP2024513175 A JP 2024513175A JP 2024513175 A JP2024513175 A JP 2024513175A JP WO2025046720 A1 JPWO2025046720 A1 JP WO2025046720A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2024513175A
Other languages
Japanese (ja)
Other versions
JPWO2025046720A5 (https=
JP7751079B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2025046720A1 publication Critical patent/JPWO2025046720A1/ja
Publication of JPWO2025046720A5 publication Critical patent/JPWO2025046720A5/ja
Application granted granted Critical
Publication of JP7751079B2 publication Critical patent/JP7751079B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32Gas-filled discharge tubes
    • H01J37/32431Constructional details of the reactor
    • H01J37/32623Mechanical discharge control means
    • H01J37/32642Focus rings
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04Apparatus for manufacture or treatment
    • H10P72/0431Apparatus for thermal treatment
    • H10P72/0432Apparatus for thermal treatment mainly by conduction
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722Details of electrostatic chucks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332Coating
    • H01J2237/3322Problems associated with coating
    • H01J2237/3323Problems associated with coating uniformity
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32Processing objects by plasma generation
    • H01J2237/33Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334Etching
    • H01J2237/3343Problems associated with etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2024513175A 2023-08-29 2023-08-29 半導体製造装置用部材 Active JP7751079B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/031085 WO2025046720A1 (ja) 2023-08-29 2023-08-29 半導体製造装置用部材

Publications (3)

Publication Number Publication Date
JPWO2025046720A1 true JPWO2025046720A1 (https=) 2025-03-06
JPWO2025046720A5 JPWO2025046720A5 (https=) 2025-08-06
JP7751079B2 JP7751079B2 (ja) 2025-10-07

Family

ID=94773396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024513175A Active JP7751079B2 (ja) 2023-08-29 2023-08-29 半導体製造装置用部材

Country Status (5)

Country Link
US (1) US20250079134A1 (https=)
JP (1) JP7751079B2 (https=)
CN (1) CN121753542A (https=)
TW (1) TW202512376A (https=)
WO (1) WO2025046720A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2026053937A (ja) * 2024-09-13 2026-03-26 日本特殊陶業株式会社 保持装置、および、保持装置の製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016027601A (ja) * 2014-06-24 2016-02-18 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP2016127090A (ja) * 2014-12-26 2016-07-11 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP2020113603A (ja) * 2019-01-09 2020-07-27 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の載置台
JP2023005203A (ja) * 2021-06-28 2023-01-18 東京エレクトロン株式会社 基板支持体、基板支持体アセンブリ及びプラズマ処理装置
JP2023039202A (ja) * 2021-09-08 2023-03-20 東京エレクトロン株式会社 基板支持体アセンブリ及びプラズマ処理装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016027601A (ja) * 2014-06-24 2016-02-18 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP2016127090A (ja) * 2014-12-26 2016-07-11 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP2020113603A (ja) * 2019-01-09 2020-07-27 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の載置台
JP2023005203A (ja) * 2021-06-28 2023-01-18 東京エレクトロン株式会社 基板支持体、基板支持体アセンブリ及びプラズマ処理装置
JP2023039202A (ja) * 2021-09-08 2023-03-20 東京エレクトロン株式会社 基板支持体アセンブリ及びプラズマ処理装置

Also Published As

Publication number Publication date
CN121753542A (zh) 2026-03-27
TW202512376A (zh) 2025-03-16
US20250079134A1 (en) 2025-03-06
JP7751079B2 (ja) 2025-10-07
WO2025046720A1 (ja) 2025-03-06

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