JP7751079B2 - 半導体製造装置用部材 - Google Patents

半導体製造装置用部材

Info

Publication number
JP7751079B2
JP7751079B2 JP2024513175A JP2024513175A JP7751079B2 JP 7751079 B2 JP7751079 B2 JP 7751079B2 JP 2024513175 A JP2024513175 A JP 2024513175A JP 2024513175 A JP2024513175 A JP 2024513175A JP 7751079 B2 JP7751079 B2 JP 7751079B2
Authority
JP
Japan
Prior art keywords
central
ceramic member
outer peripheral
peripheral
semiconductor manufacturing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2024513175A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2025046720A1 (https=
JPWO2025046720A5 (https=
Inventor
達也 久野
靖也 井上
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NGK Insulators Ltd
Original Assignee
NGK Insulators Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NGK Insulators Ltd filed Critical NGK Insulators Ltd
Publication of JPWO2025046720A1 publication Critical patent/JPWO2025046720A1/ja
Publication of JPWO2025046720A5 publication Critical patent/JPWO2025046720A5/ja
Application granted granted Critical
Publication of JP7751079B2 publication Critical patent/JP7751079B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32623—Mechanical discharge control means
    • H01J37/32642—Focus rings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722—Details of electrostatic chucks
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7611—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7616—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating, a hardness or a material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/76—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches
    • H10P72/7604—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support
    • H10P72/7624—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using mechanical means, e.g. clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/332—Coating
    • H01J2237/3322—Problems associated with coating
    • H01J2237/3323—Problems associated with coating uniformity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/32—Processing objects by plasma generation
    • H01J2237/33—Processing objects by plasma generation characterised by the type of processing
    • H01J2237/334—Etching
    • H01J2237/3343—Problems associated with etching

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
JP2024513175A 2023-08-29 2023-08-29 半導体製造装置用部材 Active JP7751079B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2023/031085 WO2025046720A1 (ja) 2023-08-29 2023-08-29 半導体製造装置用部材

Publications (3)

Publication Number Publication Date
JPWO2025046720A1 JPWO2025046720A1 (https=) 2025-03-06
JPWO2025046720A5 JPWO2025046720A5 (https=) 2025-08-06
JP7751079B2 true JP7751079B2 (ja) 2025-10-07

Family

ID=94773396

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024513175A Active JP7751079B2 (ja) 2023-08-29 2023-08-29 半導体製造装置用部材

Country Status (5)

Country Link
US (1) US20250079134A1 (https=)
JP (1) JP7751079B2 (https=)
CN (1) CN121753542A (https=)
TW (1) TW202512376A (https=)
WO (1) WO2025046720A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2026053937A (ja) * 2024-09-13 2026-03-26 日本特殊陶業株式会社 保持装置、および、保持装置の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016027601A (ja) 2014-06-24 2016-02-18 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP2016127090A (ja) 2014-12-26 2016-07-11 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP2020113603A (ja) 2019-01-09 2020-07-27 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の載置台
JP2023039202A (ja) 2021-09-08 2023-03-20 東京エレクトロン株式会社 基板支持体アセンブリ及びプラズマ処理装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7579758B2 (ja) * 2021-06-28 2024-11-08 東京エレクトロン株式会社 基板支持体、基板支持体アセンブリ及びプラズマ処理装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016027601A (ja) 2014-06-24 2016-02-18 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP2016127090A (ja) 2014-12-26 2016-07-11 東京エレクトロン株式会社 載置台及びプラズマ処理装置
JP2020113603A (ja) 2019-01-09 2020-07-27 東京エレクトロン株式会社 プラズマ処理装置およびプラズマ処理装置の載置台
JP2023039202A (ja) 2021-09-08 2023-03-20 東京エレクトロン株式会社 基板支持体アセンブリ及びプラズマ処理装置

Also Published As

Publication number Publication date
JPWO2025046720A1 (https=) 2025-03-06
CN121753542A (zh) 2026-03-27
TW202512376A (zh) 2025-03-16
US20250079134A1 (en) 2025-03-06
WO2025046720A1 (ja) 2025-03-06

Similar Documents

Publication Publication Date Title
US7589950B2 (en) Detachable electrostatic chuck having sealing assembly
JP7569342B2 (ja) 半導体製造装置用部材
KR101249654B1 (ko) 탑재대 구조 및 열처리 장치
US7697260B2 (en) Detachable electrostatic chuck
CN102160167B (zh) 静电吸盘组件
US9969022B2 (en) Vacuum process chamber component and methods of making
JP7569343B2 (ja) 半導体製造装置用部材
JP4451098B2 (ja) サセプタ装置
JP7483121B2 (ja) 半導体製造装置用部材
JP7569772B2 (ja) 半導体製造装置用部材
JP7560675B1 (ja) 半導体製造装置用部材
JP7514817B2 (ja) 半導体製造装置用部材
KR102688371B1 (ko) 반도체 제조 장치용 부재
KR102800130B1 (ko) 웨이퍼 배치대
JP7622002B2 (ja) ウエハ載置台
JP7751079B2 (ja) 半導体製造装置用部材
JP7503708B1 (ja) 半導体製造装置用部材
KR102875929B1 (ko) 웨이퍼 배치대
JP7657310B2 (ja) ウエハ載置台
KR20260057568A (ko) 반도체 제조 장치용 부재
WO2023037698A1 (ja) ウエハ載置台
JP7671918B1 (ja) 半導体製造装置用部材
TW202412166A (zh) 晶圓載置台
KR20260057603A (ko) 웨이퍼 배치대
TW202425204A (zh) 晶圓載置台

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20240227

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20240227

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20250415

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20250609

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20250916

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20250925

R150 Certificate of patent or registration of utility model

Ref document number: 7751079

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150