JPWO2024241741A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2024241741A5
JPWO2024241741A5 JP2025521859A JP2025521859A JPWO2024241741A5 JP WO2024241741 A5 JPWO2024241741 A5 JP WO2024241741A5 JP 2025521859 A JP2025521859 A JP 2025521859A JP 2025521859 A JP2025521859 A JP 2025521859A JP WO2024241741 A5 JPWO2024241741 A5 JP WO2024241741A5
Authority
JP
Japan
Prior art keywords
region
trench
semiconductor device
conductivity type
doping concentration
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2025521859A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2024241741A1 (https=
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2024/014534 external-priority patent/WO2024241741A1/ja
Publication of JPWO2024241741A1 publication Critical patent/JPWO2024241741A1/ja
Publication of JPWO2024241741A5 publication Critical patent/JPWO2024241741A5/ja
Pending legal-status Critical Current

Links

JP2025521859A 2023-05-23 2024-04-10 Pending JPWO2024241741A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2023084932 2023-05-23
PCT/JP2024/014534 WO2024241741A1 (ja) 2023-05-23 2024-04-10 半導体装置および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2024241741A1 JPWO2024241741A1 (https=) 2024-11-28
JPWO2024241741A5 true JPWO2024241741A5 (https=) 2025-07-07

Family

ID=93590057

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2025521859A Pending JPWO2024241741A1 (https=) 2023-05-23 2024-04-10

Country Status (4)

Country Link
US (1) US20250254983A1 (https=)
JP (1) JPWO2024241741A1 (https=)
CN (1) CN120153772A (https=)
WO (1) WO2024241741A1 (https=)

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7456113B2 (ja) * 2019-10-11 2024-03-27 富士電機株式会社 半導体装置
DE112021000202T5 (de) * 2020-07-03 2022-08-18 Fuji Electric Co., Ltd. Halbleitervorrichtung
JP7687114B2 (ja) * 2021-07-29 2025-06-03 富士電機株式会社 半導体装置

Similar Documents

Publication Publication Date Title
JP7574558B2 (ja) 半導体装置
US8859365B2 (en) Semiconductor device and method for manufacturing same
JP6741070B2 (ja) 半導体装置およびその製造方法
JP7687114B2 (ja) 半導体装置
JP5767430B2 (ja) 半導体装置および半導体装置の製造方法
CN107180855B (zh) 半导体装置
JP4813762B2 (ja) 半導体装置及びその製造方法
CN108780809A (zh) Rc-igbt及其制造方法
JPWO2019116748A1 (ja) 半導体装置およびその製造方法
JP2007515079A5 (https=)
CN103828058A (zh) 包括垂直半导体元件的半导体器件
JP2024010217A (ja) 半導体装置および半導体装置の製造方法
JP2005510088A (ja) 多結晶シリコンソースコンタクト構造を有するトレンチ金属酸化膜半導体電界効果トランジスタデバイス
JP2023135082A (ja) 半導体装置
JP2007523487A (ja) トレンチゲート半導体装置とその製造
US20060001110A1 (en) Lateral trench MOSFET
KR20230121566A (ko) 전류 확산 영역을 갖는 반도체 장치
JP2023179936A5 (https=)
US11984499B2 (en) Silicon carbide semiconductor device
US10553681B2 (en) Forming a superjunction transistor device
US20240145464A1 (en) Semiconductor device and method of manufacturing same
JP2003133555A (ja) 半導体装置及びその製造方法
JP2019106506A (ja) 半導体装置
US20240088221A1 (en) Semiconductor device
JPWO2024241741A5 (https=)