JPWO2024069733A5 - - Google Patents

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JPWO2024069733A5
JPWO2024069733A5 JP2024548857A JP2024548857A JPWO2024069733A5 JP WO2024069733 A5 JPWO2024069733 A5 JP WO2024069733A5 JP 2024548857 A JP2024548857 A JP 2024548857A JP 2024548857 A JP2024548857 A JP 2024548857A JP WO2024069733 A5 JPWO2024069733 A5 JP WO2024069733A5
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detection
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JP7716602B2 (ja
JPWO2024069733A1 (https=
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Priority claimed from PCT/JP2022/035871 external-priority patent/WO2024069733A1/ja
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JP2024548857A 2022-09-27 2022-09-27 磁気抵抗効果素子の製造方法及び磁気抵抗効果素子 Active JP7716602B2 (ja)

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Application Number Priority Date Filing Date Title
PCT/JP2022/035871 WO2024069733A1 (ja) 2022-09-27 2022-09-27 磁気抵抗効果素子の製造方法及び磁気抵抗効果素子

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JPWO2024069733A1 JPWO2024069733A1 (https=) 2024-04-04
JPWO2024069733A5 true JPWO2024069733A5 (https=) 2025-04-17
JP7716602B2 JP7716602B2 (ja) 2025-07-31

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JP2024548857A Active JP7716602B2 (ja) 2022-09-27 2022-09-27 磁気抵抗効果素子の製造方法及び磁気抵抗効果素子

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US (1) US20250221319A1 (https=)
JP (1) JP7716602B2 (https=)
WO (1) WO2024069733A1 (https=)

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPO924597A0 (en) * 1997-09-16 1997-10-09 Razorback Vehicles Corporation Pty Ltd A vehicle
US9336998B2 (en) * 2014-05-09 2016-05-10 Varian Semiconductor Equipment Associates, Inc. Apparatus and method for dynamic control of ion beam energy and angle
WO2018139276A1 (ja) * 2017-01-24 2018-08-02 国立大学法人東北大学 トンネル磁気抵抗素子の製造方法
US10043851B1 (en) 2017-08-03 2018-08-07 Headway Technologies, Inc. Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching
US10943631B2 (en) * 2017-09-04 2021-03-09 Tdk Corporation Spin current magnetization reversing element, magnetoresistance effect element, magnetic memory, and magnetic device
JP2019047118A (ja) * 2017-09-04 2019-03-22 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子、磁気メモリ、および磁気デバイス
US11145808B2 (en) * 2019-11-12 2021-10-12 Applied Materials, Inc. Methods for etching a structure for MRAM applications
JP2021090041A (ja) * 2019-11-26 2021-06-10 Tdk株式会社 磁化回転素子、磁気抵抗効果素子、半導体素子、磁気記録アレイ及び磁気抵抗効果素子の製造方法
CN115039235B (zh) * 2020-03-13 2025-12-12 Tdk株式会社 磁化旋转元件、磁阻效应元件、磁记录阵列、高频器件及磁化旋转元件的制造方法

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