JPWO2024069733A1 - - Google Patents
Info
- Publication number
- JPWO2024069733A1 JPWO2024069733A1 JP2024548857A JP2024548857A JPWO2024069733A1 JP WO2024069733 A1 JPWO2024069733 A1 JP WO2024069733A1 JP 2024548857 A JP2024548857 A JP 2024548857A JP 2024548857 A JP2024548857 A JP 2024548857A JP WO2024069733 A1 JPWO2024069733 A1 JP WO2024069733A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/40—Devices controlled by magnetic fields
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/80—Constructional details
- H10N50/85—Materials of the active region
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Hall/Mr Elements (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| PCT/JP2022/035871 WO2024069733A1 (ja) | 2022-09-27 | 2022-09-27 | 磁気抵抗効果素子の製造方法及び磁気抵抗効果素子 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2024069733A1 true JPWO2024069733A1 (https=) | 2024-04-04 |
| JPWO2024069733A5 JPWO2024069733A5 (https=) | 2025-04-17 |
| JP7716602B2 JP7716602B2 (ja) | 2025-07-31 |
Family
ID=90476623
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2024548857A Active JP7716602B2 (ja) | 2022-09-27 | 2022-09-27 | 磁気抵抗効果素子の製造方法及び磁気抵抗効果素子 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20250221319A1 (https=) |
| JP (1) | JP7716602B2 (https=) |
| WO (1) | WO2024069733A1 (https=) |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010043851A1 (en) * | 1997-09-16 | 2001-11-22 | Jeffrey Kendall | Raisable/lowerable vehicle bed carrying loads |
| JP2017520909A (ja) * | 2014-05-09 | 2017-07-27 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | 基板をエッチングする方法、デバイス構造をエッチングする方法及び処理装置 |
| WO2018139276A1 (ja) * | 2017-01-24 | 2018-08-02 | 国立大学法人東北大学 | トンネル磁気抵抗素子の製造方法 |
| US20190074043A1 (en) * | 2017-09-04 | 2019-03-07 | Tdk Corporation | Spin current magnetization reversing element, magnetoresistance effect element, magnetic memory, and magnetic device |
| JP2019047118A (ja) * | 2017-09-04 | 2019-03-22 | Tdk株式会社 | スピン流磁化反転素子、磁気抵抗効果素子、磁気メモリ、および磁気デバイス |
| US20210143323A1 (en) * | 2019-11-12 | 2021-05-13 | Applied Materials, Inc. | Methods for etching a structure for MRAM Applications |
| JP2021090041A (ja) * | 2019-11-26 | 2021-06-10 | Tdk株式会社 | 磁化回転素子、磁気抵抗効果素子、半導体素子、磁気記録アレイ及び磁気抵抗効果素子の製造方法 |
| WO2021181651A1 (ja) * | 2020-03-13 | 2021-09-16 | Tdk株式会社 | 磁化回転素子、磁気抵抗効果素子、磁気記録アレイ、高周波デバイスおよび磁化回転素子の製造方法 |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10043851B1 (en) | 2017-08-03 | 2018-08-07 | Headway Technologies, Inc. | Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching |
-
2022
- 2022-09-27 JP JP2024548857A patent/JP7716602B2/ja active Active
- 2022-09-27 WO PCT/JP2022/035871 patent/WO2024069733A1/ja not_active Ceased
-
2025
- 2025-03-17 US US19/081,178 patent/US20250221319A1/en active Pending
Patent Citations (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20010043851A1 (en) * | 1997-09-16 | 2001-11-22 | Jeffrey Kendall | Raisable/lowerable vehicle bed carrying loads |
| JP2017520909A (ja) * | 2014-05-09 | 2017-07-27 | ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド | 基板をエッチングする方法、デバイス構造をエッチングする方法及び処理装置 |
| WO2018139276A1 (ja) * | 2017-01-24 | 2018-08-02 | 国立大学法人東北大学 | トンネル磁気抵抗素子の製造方法 |
| US20190074043A1 (en) * | 2017-09-04 | 2019-03-07 | Tdk Corporation | Spin current magnetization reversing element, magnetoresistance effect element, magnetic memory, and magnetic device |
| JP2019047118A (ja) * | 2017-09-04 | 2019-03-22 | Tdk株式会社 | スピン流磁化反転素子、磁気抵抗効果素子、磁気メモリ、および磁気デバイス |
| US20210143323A1 (en) * | 2019-11-12 | 2021-05-13 | Applied Materials, Inc. | Methods for etching a structure for MRAM Applications |
| WO2021096657A1 (en) * | 2019-11-12 | 2021-05-20 | Applied Materials, Inc. | Methods for etching a structure for mram applications |
| JP2021090041A (ja) * | 2019-11-26 | 2021-06-10 | Tdk株式会社 | 磁化回転素子、磁気抵抗効果素子、半導体素子、磁気記録アレイ及び磁気抵抗効果素子の製造方法 |
| WO2021181651A1 (ja) * | 2020-03-13 | 2021-09-16 | Tdk株式会社 | 磁化回転素子、磁気抵抗効果素子、磁気記録アレイ、高周波デバイスおよび磁化回転素子の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20250221319A1 (en) | 2025-07-03 |
| WO2024069733A1 (ja) | 2024-04-04 |
| JP7716602B2 (ja) | 2025-07-31 |
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