JP7716602B2 - 磁気抵抗効果素子の製造方法及び磁気抵抗効果素子 - Google Patents

磁気抵抗効果素子の製造方法及び磁気抵抗効果素子

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Publication number
JP7716602B2
JP7716602B2 JP2024548857A JP2024548857A JP7716602B2 JP 7716602 B2 JP7716602 B2 JP 7716602B2 JP 2024548857 A JP2024548857 A JP 2024548857A JP 2024548857 A JP2024548857 A JP 2024548857A JP 7716602 B2 JP7716602 B2 JP 7716602B2
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layer
detection
signal
wiring
sidewall
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JPWO2024069733A5 (https=
JPWO2024069733A1 (https=
Inventor
英嗣 小村
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TDK Corp
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TDK Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/40—Devices controlled by magnetic fields
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/80—Constructional details
    • H10N50/85—Materials of the active region

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Hall/Mr Elements (AREA)
JP2024548857A 2022-09-27 2022-09-27 磁気抵抗効果素子の製造方法及び磁気抵抗効果素子 Active JP7716602B2 (ja)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2022/035871 WO2024069733A1 (ja) 2022-09-27 2022-09-27 磁気抵抗効果素子の製造方法及び磁気抵抗効果素子

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JPWO2024069733A1 JPWO2024069733A1 (https=) 2024-04-04
JPWO2024069733A5 JPWO2024069733A5 (https=) 2025-04-17
JP7716602B2 true JP7716602B2 (ja) 2025-07-31

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US (1) US20250221319A1 (https=)
JP (1) JP7716602B2 (https=)
WO (1) WO2024069733A1 (https=)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017520909A (ja) 2014-05-09 2017-07-27 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 基板をエッチングする方法、デバイス構造をエッチングする方法及び処理装置
WO2018139276A1 (ja) 2017-01-24 2018-08-02 国立大学法人東北大学 トンネル磁気抵抗素子の製造方法
US10043851B1 (en) 2017-08-03 2018-08-07 Headway Technologies, Inc. Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching
US20190074043A1 (en) 2017-09-04 2019-03-07 Tdk Corporation Spin current magnetization reversing element, magnetoresistance effect element, magnetic memory, and magnetic device
JP2019047118A (ja) 2017-09-04 2019-03-22 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子、磁気メモリ、および磁気デバイス
US20210143323A1 (en) 2019-11-12 2021-05-13 Applied Materials, Inc. Methods for etching a structure for MRAM Applications
JP2021090041A (ja) 2019-11-26 2021-06-10 Tdk株式会社 磁化回転素子、磁気抵抗効果素子、半導体素子、磁気記録アレイ及び磁気抵抗効果素子の製造方法
WO2021181651A1 (ja) 2020-03-13 2021-09-16 Tdk株式会社 磁化回転素子、磁気抵抗効果素子、磁気記録アレイ、高周波デバイスおよび磁化回転素子の製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AUPO924597A0 (en) * 1997-09-16 1997-10-09 Razorback Vehicles Corporation Pty Ltd A vehicle

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017520909A (ja) 2014-05-09 2017-07-27 ヴァリアン セミコンダクター イクイップメント アソシエイツ インコーポレイテッド 基板をエッチングする方法、デバイス構造をエッチングする方法及び処理装置
WO2018139276A1 (ja) 2017-01-24 2018-08-02 国立大学法人東北大学 トンネル磁気抵抗素子の製造方法
US10043851B1 (en) 2017-08-03 2018-08-07 Headway Technologies, Inc. Etch selectivity by introducing oxidants to noble gas during physical magnetic tunnel junction (MTJ) etching
US20190074043A1 (en) 2017-09-04 2019-03-07 Tdk Corporation Spin current magnetization reversing element, magnetoresistance effect element, magnetic memory, and magnetic device
JP2019047118A (ja) 2017-09-04 2019-03-22 Tdk株式会社 スピン流磁化反転素子、磁気抵抗効果素子、磁気メモリ、および磁気デバイス
US20210143323A1 (en) 2019-11-12 2021-05-13 Applied Materials, Inc. Methods for etching a structure for MRAM Applications
WO2021096657A1 (en) 2019-11-12 2021-05-20 Applied Materials, Inc. Methods for etching a structure for mram applications
JP2021090041A (ja) 2019-11-26 2021-06-10 Tdk株式会社 磁化回転素子、磁気抵抗効果素子、半導体素子、磁気記録アレイ及び磁気抵抗効果素子の製造方法
WO2021181651A1 (ja) 2020-03-13 2021-09-16 Tdk株式会社 磁化回転素子、磁気抵抗効果素子、磁気記録アレイ、高周波デバイスおよび磁化回転素子の製造方法

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US20250221319A1 (en) 2025-07-03
WO2024069733A1 (ja) 2024-04-04
JPWO2024069733A1 (https=) 2024-04-04

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