JPWO2023233887A5 - - Google Patents

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Publication number
JPWO2023233887A5
JPWO2023233887A5 JP2024524250A JP2024524250A JPWO2023233887A5 JP WO2023233887 A5 JPWO2023233887 A5 JP WO2023233887A5 JP 2024524250 A JP2024524250 A JP 2024524250A JP 2024524250 A JP2024524250 A JP 2024524250A JP WO2023233887 A5 JPWO2023233887 A5 JP WO2023233887A5
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JP
Japan
Prior art keywords
main surface
region
silicon carbide
carbide substrate
less
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Pending
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JP2024524250A
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English (en)
Japanese (ja)
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JPWO2023233887A1 (https=
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Priority claimed from PCT/JP2023/016669 external-priority patent/WO2023233887A1/ja
Publication of JPWO2023233887A1 publication Critical patent/JPWO2023233887A1/ja
Publication of JPWO2023233887A5 publication Critical patent/JPWO2023233887A5/ja
Pending legal-status Critical Current

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JP2024524250A 2022-06-02 2023-04-27 Pending JPWO2023233887A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022090216 2022-06-02
PCT/JP2023/016669 WO2023233887A1 (ja) 2022-06-02 2023-04-27 炭化珪素基板、炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2023233887A1 JPWO2023233887A1 (https=) 2023-12-07
JPWO2023233887A5 true JPWO2023233887A5 (https=) 2025-02-10

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ID=89026121

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024524250A Pending JPWO2023233887A1 (https=) 2022-06-02 2023-04-27

Country Status (3)

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US (1) US20250203985A1 (https=)
JP (1) JPWO2023233887A1 (https=)
WO (1) WO2023233887A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025121062A1 (ja) * 2023-12-08 2025-06-12 住友電気工業株式会社 炭化珪素基板、エピタキシャル基板および半導体装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011190154A (ja) * 2010-03-16 2011-09-29 Sumitomo Electric Ind Ltd 結晶の製造方法、結晶の製造装置および積層膜
JP6949358B2 (ja) * 2017-07-28 2021-10-13 学校法人関西学院 単結晶ＳｉＣの製造方法、ＳｉＣインゴットの製造方法、及びＳｉＣウエハの製造方法
WO2021215120A1 (ja) * 2020-04-22 2021-10-28 住友電気工業株式会社 炭化珪素単結晶および炭化珪素単結晶の製造方法

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