JPWO2024080071A5 - - Google Patents

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Publication number
JPWO2024080071A5
JPWO2024080071A5 JP2024551339A JP2024551339A JPWO2024080071A5 JP WO2024080071 A5 JPWO2024080071 A5 JP WO2024080071A5 JP 2024551339 A JP2024551339 A JP 2024551339A JP 2024551339 A JP2024551339 A JP 2024551339A JP WO2024080071 A5 JPWO2024080071 A5 JP WO2024080071A5
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JP
Japan
Prior art keywords
silicon carbide
crystal substrate
carbide crystal
substrate according
main surface
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2024551339A
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English (en)
Japanese (ja)
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JPWO2024080071A1 (https=
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Publication date
Application filed filed Critical
Priority claimed from PCT/JP2023/033534 external-priority patent/WO2024080071A1/ja
Publication of JPWO2024080071A1 publication Critical patent/JPWO2024080071A1/ja
Publication of JPWO2024080071A5 publication Critical patent/JPWO2024080071A5/ja
Pending legal-status Critical Current

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JP2024551339A 2022-10-11 2023-09-14 Pending JPWO2024080071A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2022163339 2022-10-11
PCT/JP2023/033534 WO2024080071A1 (ja) 2022-10-11 2023-09-14 炭化珪素結晶基板、エピタキシャル基板および半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2024080071A1 JPWO2024080071A1 (https=) 2024-04-18
JPWO2024080071A5 true JPWO2024080071A5 (https=) 2025-06-24

Family

ID=90669541

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2024551339A Pending JPWO2024080071A1 (https=) 2022-10-11 2023-09-14

Country Status (2)

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JP (1) JPWO2024080071A1 (https=)
WO (1) WO2024080071A1 (https=)

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6200018B2 (ja) * 2016-03-15 2017-09-20 新日鉄住金マテリアルズ株式会社 炭化珪素単結晶ウェハ
WO2018066173A1 (ja) * 2016-10-04 2018-04-12 住友電気工業株式会社 炭化珪素エピタキシャル基板及び炭化珪素半導体装置の製造方法

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