JPWO2023139813A1 - - Google Patents

Info

Publication number
JPWO2023139813A1
JPWO2023139813A1 JP2023548930A JP2023548930A JPWO2023139813A1 JP WO2023139813 A1 JPWO2023139813 A1 JP WO2023139813A1 JP 2023548930 A JP2023548930 A JP 2023548930A JP 2023548930 A JP2023548930 A JP 2023548930A JP WO2023139813 A1 JPWO2023139813 A1 JP WO2023139813A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023548930A
Other versions
JP7355970B1 (ja
JPWO2023139813A5 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023139813A1 publication Critical patent/JPWO2023139813A1/ja
Application granted granted Critical
Publication of JP7355970B1 publication Critical patent/JP7355970B1/ja
Publication of JPWO2023139813A5 publication Critical patent/JPWO2023139813A5/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Ceramic Engineering (AREA)
  • Laser Beam Processing (AREA)
  • Thermal Transfer Or Thermal Recording In General (AREA)
JP2023548930A 2022-01-19 2022-07-06 半導体装置及びレーザマーキング方法 Active JP7355970B1 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202263300787P 2022-01-19 2022-01-19
US63/300,787 2022-01-19
PCT/JP2022/026880 WO2023139813A1 (ja) 2022-01-19 2022-07-06 半導体装置及びレーザマーキング方法

Publications (3)

Publication Number Publication Date
JPWO2023139813A1 true JPWO2023139813A1 (ja) 2023-07-27
JP7355970B1 JP7355970B1 (ja) 2023-10-03
JPWO2023139813A5 JPWO2023139813A5 (ja) 2023-12-20

Family

ID=87348483

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023548930A Active JP7355970B1 (ja) 2022-01-19 2022-07-06 半導体装置及びレーザマーキング方法

Country Status (3)

Country Link
JP (1) JP7355970B1 (ja)
CN (1) CN117425948B (ja)
WO (1) WO2023139813A1 (ja)

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0761198A (ja) * 1993-08-26 1995-03-07 Yoshioka Fujio レーザによる金属のカラーマーキング方法
JP3242632B2 (ja) 1998-11-25 2001-12-25 株式会社小松製作所 レーザビームによる微小ドットマーク形態、そのマーキング方法
JP4910100B2 (ja) * 2006-07-06 2012-04-04 日本ケミコン株式会社 電子部品の金属ケース
US7615404B2 (en) * 2006-10-31 2009-11-10 Intel Corporation High-contrast laser mark on substrate surfaces
JP2009064824A (ja) * 2007-09-04 2009-03-26 Toyota Motor Corp 半導体装置と半導体装置に対するマーキング方法
JP4969377B2 (ja) * 2007-09-11 2012-07-04 ローム株式会社 半導体装置
CN101789391B (zh) * 2009-01-23 2012-08-22 中芯国际集成电路制造(上海)有限公司 半导体装置及其制造方法
JP5849849B2 (ja) * 2012-04-25 2016-02-03 株式会社デンソー 半導体装置
JP2016139642A (ja) * 2015-01-26 2016-08-04 株式会社東芝 半導体装置
DE102016109720B4 (de) * 2016-05-25 2023-06-22 Infineon Technologies Ag Verfahren zum Bilden eines Halbleiterbauelements und Halbleiterbauelement
JP6865044B2 (ja) * 2017-01-19 2021-04-28 浜松ホトニクス株式会社 検査方法、検査装置、及びマーキング形成方法
JP6614470B1 (ja) * 2018-06-19 2019-12-04 パナソニックＩｐマネジメント株式会社 半導体装置

Also Published As

Publication number Publication date
JP7355970B1 (ja) 2023-10-03
CN117425948A (zh) 2024-01-19
CN117425948B (zh) 2024-05-28
WO2023139813A1 (ja) 2023-07-27

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