JPWO2023132259A1 - - Google Patents

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Publication number
JPWO2023132259A1
JPWO2023132259A1 JP2023572427A JP2023572427A JPWO2023132259A1 JP WO2023132259 A1 JPWO2023132259 A1 JP WO2023132259A1 JP 2023572427 A JP2023572427 A JP 2023572427A JP 2023572427 A JP2023572427 A JP 2023572427A JP WO2023132259 A1 JPWO2023132259 A1 JP WO2023132259A1
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JP
Japan
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JP2023572427A
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Japanese (ja)
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JPWO2023132259A5 (https=
JP7740739B2 (ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

Landscapes

  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
JP2023572427A 2022-01-06 2022-12-22 金属酸化物の表面処理方法、ペロブスカイト太陽電池の製造方法、および金属酸化物表面処理装置 Active JP7740739B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2022000890 2022-01-06
JP2022000890 2022-01-06
PCT/JP2022/047340 WO2023132259A1 (ja) 2022-01-06 2022-12-22 金属酸化物の表面処理方法、ペロブスカイト太陽電池の製造方法、および金属酸化物表面処理装置

Publications (3)

Publication Number Publication Date
JPWO2023132259A1 true JPWO2023132259A1 (https=) 2023-07-13
JPWO2023132259A5 JPWO2023132259A5 (https=) 2024-08-06
JP7740739B2 JP7740739B2 (ja) 2025-09-17

Family

ID=87073568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023572427A Active JP7740739B2 (ja) 2022-01-06 2022-12-22 金属酸化物の表面処理方法、ペロブスカイト太陽電池の製造方法、および金属酸化物表面処理装置

Country Status (3)

Country Link
JP (1) JP7740739B2 (https=)
KR (1) KR102923263B1 (https=)
WO (1) WO2023132259A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2025127101A1 (ja) * 2023-12-15 2025-06-19 Ｔｏｐｐａｎホールディングス株式会社 太陽電池、ナノ材料、及び分散液、並びに太陽電池の製造方法
CN118932314A (zh) * 2024-07-23 2024-11-12 中山大学 一种晶体硅-宽带隙化合物异质结太阳电池制备方法

Citations (13)

* Cited by examiner, † Cited by third party
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JP2000133466A (ja) * 1998-10-23 2000-05-12 Canon Inc 表面改質ｉｔｏ膜、その表面処理方法およびそれを用いた電荷注入型発光素子
JP2001284060A (ja) * 2000-03-29 2001-10-12 Honda Motor Co Ltd 透明電極および有機エレクトロルミネッセンス素子
JP2008159347A (ja) * 2006-12-22 2008-07-10 Seiko Epson Corp 透明導電膜の製造方法、有機エレクトロルミネッセンス装置の製造方法、およびプラズマ処理装置
JP2008205254A (ja) * 2007-02-21 2008-09-04 Toyota Central R&D Labs Inc 有機電界発光素子
JP2008234896A (ja) * 2007-03-19 2008-10-02 Seiko Epson Corp 有機エレクトロルミネッセンス装置の製造方法
JP2009224596A (ja) * 2008-03-17 2009-10-01 Tokyo Electron Ltd プラズマ処理装置
JP2010037648A (ja) * 2008-07-09 2010-02-18 Univ Of Tokyo 無機薄膜及びその製造方法、並びにガラス
JP2010519699A (ja) * 2007-02-23 2010-06-03 サン−ゴバン グラス フランス 不連続な電極を保持する基体、同基体を含む有機エレクトロルミネッセントデバイスおよびそれらの作製
CN102610765A (zh) * 2012-04-06 2012-07-25 复旦大学 一种提高氧化铟锡透明导电膜表面功函数的表面修饰方法
JP2013534057A (ja) * 2010-06-30 2013-08-29 コーニング インコーポレイテッド Ｓｏｉ基板に仕上げを施す方法
JP2013191423A (ja) * 2012-03-14 2013-09-26 Toshiba Corp プラズマ処理装置
JP2017139092A (ja) * 2016-02-02 2017-08-10 株式会社ジャパンディスプレイ 表示装置及びその製造方法
CN111540835A (zh) * 2020-05-11 2020-08-14 北京工业大学 一种提高钙钛矿太阳能电池热稳定性的方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001284059A (ja) 2000-03-29 2001-10-12 Honda Motor Co Ltd 透明電極、有機エレクトロルミネッセンス素子、透明電極処理装置および透明電極の処理方法
US20120132272A1 (en) * 2010-11-19 2012-05-31 Alliance For Sustainable Energy, Llc. Solution processed metal oxide thin film hole transport layers for high performance organic solar cells
CN108054282A (zh) * 2017-11-27 2018-05-18 济南大学 锌掺杂氧化镍纳米颗粒空穴传输层反置钙钛矿太阳能电池及制备方法
CN109841740A (zh) * 2019-03-22 2019-06-04 上海交通大学 一种基于氧化镍空穴传输层的钙钛矿太阳电池的制备方法
CN111081812A (zh) * 2019-11-18 2020-04-28 深圳第三代半导体研究院 一种透明导电氧化物薄膜的制备方法及应用
CN112397654A (zh) * 2020-11-16 2021-02-23 西交利物浦大学 钙钛矿太阳能电池及其制备方法

Patent Citations (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2000133466A (ja) * 1998-10-23 2000-05-12 Canon Inc 表面改質ｉｔｏ膜、その表面処理方法およびそれを用いた電荷注入型発光素子
JP2001284060A (ja) * 2000-03-29 2001-10-12 Honda Motor Co Ltd 透明電極および有機エレクトロルミネッセンス素子
JP2008159347A (ja) * 2006-12-22 2008-07-10 Seiko Epson Corp 透明導電膜の製造方法、有機エレクトロルミネッセンス装置の製造方法、およびプラズマ処理装置
JP2008205254A (ja) * 2007-02-21 2008-09-04 Toyota Central R&D Labs Inc 有機電界発光素子
JP2010519699A (ja) * 2007-02-23 2010-06-03 サン−ゴバン グラス フランス 不連続な電極を保持する基体、同基体を含む有機エレクトロルミネッセントデバイスおよびそれらの作製
JP2008234896A (ja) * 2007-03-19 2008-10-02 Seiko Epson Corp 有機エレクトロルミネッセンス装置の製造方法
JP2009224596A (ja) * 2008-03-17 2009-10-01 Tokyo Electron Ltd プラズマ処理装置
JP2010037648A (ja) * 2008-07-09 2010-02-18 Univ Of Tokyo 無機薄膜及びその製造方法、並びにガラス
JP2013534057A (ja) * 2010-06-30 2013-08-29 コーニング インコーポレイテッド Ｓｏｉ基板に仕上げを施す方法
JP2013191423A (ja) * 2012-03-14 2013-09-26 Toshiba Corp プラズマ処理装置
CN102610765A (zh) * 2012-04-06 2012-07-25 复旦大学 一种提高氧化铟锡透明导电膜表面功函数的表面修饰方法
JP2017139092A (ja) * 2016-02-02 2017-08-10 株式会社ジャパンディスプレイ 表示装置及びその製造方法
CN111540835A (zh) * 2020-05-11 2020-08-14 北京工业大学 一种提高钙钛矿太阳能电池热稳定性的方法

Also Published As

Publication number Publication date
KR20240112915A (ko) 2024-07-19
JP7740739B2 (ja) 2025-09-17
WO2023132259A1 (ja) 2023-07-13
KR102923263B1 (ko) 2026-02-04

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