KR102923263B1 - 페로브스카이트 태양 전지의 제조 방법, 및 금속 산화물 표면 처리 장치 - Google Patents

페로브스카이트 태양 전지의 제조 방법, 및 금속 산화물 표면 처리 장치

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KR102923263B1
KR102923263B1 KR1020247021434A KR20247021434A KR102923263B1 KR 102923263 B1 KR102923263 B1 KR 102923263B1 KR 1020247021434 A KR1020247021434 A KR 1020247021434A KR 20247021434 A KR20247021434 A KR 20247021434A KR 102923263 B1 KR102923263 B1 KR 102923263B1
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metal oxide
layer
oxygen
oxide layer
oxygen plasma
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KR20240112915A (ko
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고헤이 야마모토
다쿠로우 무라카미
유우지 요시다
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고쿠리츠켄큐카이하츠호진 상교기쥬츠 소고켄큐쇼
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
    • H05H1/00—Generating plasma; Handling plasma
    • H05H1/24—Generating plasma
    • H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
    • H05H1/4645—Radiofrequency discharges
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/10—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising heterojunctions between organic semiconductors and inorganic semiconductors
    • H10K30/15—Sensitised wide-bandgap semiconductor devices, e.g. dye-sensitised TiO2
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/40—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation comprising a p-i-n structure, e.g. having a perovskite absorber between p-type and n-type charge transport layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/50—Photovoltaic [PV] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/81—Electrodes
    • H10K30/82—Transparent electrodes, e.g. indium tin oxide [ITO] electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/85—Layers having high electron mobility, e.g. electron-transporting layers or hole-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K30/00—Organic devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation
    • H10K30/80—Constructional details
    • H10K30/84—Layers having high charge carrier mobility
    • H10K30/86—Layers having high hole mobility, e.g. hole-transporting layers or electron-blocking layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/50—Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy
    • Y02E10/549—Organic PV cells
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
    • Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
    • Y02P70/50—Manufacturing or production processes characterised by the final manufactured product

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  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Inorganic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Photovoltaic Devices (AREA)
KR1020247021434A 2022-01-06 2022-12-22 페로브스카이트 태양 전지의 제조 방법, 및 금속 산화물 표면 처리 장치 Active KR102923263B1 (ko)

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JPJP-P-2022-000890 2022-01-06
JP2022000890 2022-01-06
PCT/JP2022/047340 WO2023132259A1 (ja) 2022-01-06 2022-12-22 金属酸化物の表面処理方法、ペロブスカイト太陽電池の製造方法、および金属酸化物表面処理装置

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KR102923263B1 true KR102923263B1 (ko) 2026-02-04

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WO2025127101A1 (ja) * 2023-12-15 2025-06-19 Ｔｏｐｐａｎホールディングス株式会社 太陽電池、ナノ材料、及び分散液、並びに太陽電池の製造方法
CN118932314A (zh) * 2024-07-23 2024-11-12 中山大学 一种晶体硅-宽带隙化合物异质结太阳电池制备方法

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JP2010037648A (ja) * 2008-07-09 2010-02-18 Univ Of Tokyo 無機薄膜及びその製造方法、並びにガラス
JP2013191423A (ja) * 2012-03-14 2013-09-26 Toshiba Corp プラズマ処理装置
CN109841740A (zh) * 2019-03-22 2019-06-04 上海交通大学 一种基于氧化镍空穴传输层的钙钛矿太阳电池的制备方法
CN111081812A (zh) * 2019-11-18 2020-04-28 深圳第三代半导体研究院 一种透明导电氧化物薄膜的制备方法及应用
CN111540835A (zh) * 2020-05-11 2020-08-14 北京工业大学 一种提高钙钛矿太阳能电池热稳定性的方法

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JP2001284060A (ja) * 2000-03-29 2001-10-12 Honda Motor Co Ltd 透明電極および有機エレクトロルミネッセンス素子
JP2001284059A (ja) 2000-03-29 2001-10-12 Honda Motor Co Ltd 透明電極、有機エレクトロルミネッセンス素子、透明電極処理装置および透明電極の処理方法
JP2008205254A (ja) * 2007-02-21 2008-09-04 Toyota Central R&D Labs Inc 有機電界発光素子
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JP2008234896A (ja) * 2007-03-19 2008-10-02 Seiko Epson Corp 有機エレクトロルミネッセンス装置の製造方法
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JP2008159347A (ja) * 2006-12-22 2008-07-10 Seiko Epson Corp 透明導電膜の製造方法、有機エレクトロルミネッセンス装置の製造方法、およびプラズマ処理装置
JP2010037648A (ja) * 2008-07-09 2010-02-18 Univ Of Tokyo 無機薄膜及びその製造方法、並びにガラス
JP2013191423A (ja) * 2012-03-14 2013-09-26 Toshiba Corp プラズマ処理装置
CN109841740A (zh) * 2019-03-22 2019-06-04 上海交通大学 一种基于氧化镍空穴传输层的钙钛矿太阳电池的制备方法
CN111081812A (zh) * 2019-11-18 2020-04-28 深圳第三代半导体研究院 一种透明导电氧化物薄膜的制备方法及应用
CN111540835A (zh) * 2020-05-11 2020-08-14 北京工业大学 一种提高钙钛矿太阳能电池热稳定性的方法

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KR20240112915A (ko) 2024-07-19
JP7740739B2 (ja) 2025-09-17
WO2023132259A1 (ja) 2023-07-13

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