JPWO2023127255A5 - - Google Patents
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- JPWO2023127255A5 JPWO2023127255A5 JP2023570674A JP2023570674A JPWO2023127255A5 JP WO2023127255 A5 JPWO2023127255 A5 JP WO2023127255A5 JP 2023570674 A JP2023570674 A JP 2023570674A JP 2023570674 A JP2023570674 A JP 2023570674A JP WO2023127255 A5 JPWO2023127255 A5 JP WO2023127255A5
- Authority
- JP
- Japan
- Prior art keywords
- contact
- trench
- semiconductor device
- region
- emitter region
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 claims description 38
- 239000000758 substrate Substances 0.000 claims description 7
- 239000011229 interlayer Substances 0.000 claims 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005684 electric field Effects 0.000 description 2
- 238000005468 ion implantation Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021212016 | 2021-12-27 | ||
| JP2021212016 | 2021-12-27 | ||
| PCT/JP2022/039640 WO2023127255A1 (ja) | 2021-12-27 | 2022-10-25 | 半導体装置 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023127255A1 JPWO2023127255A1 (https=) | 2023-07-06 |
| JPWO2023127255A5 true JPWO2023127255A5 (https=) | 2024-03-11 |
| JP7666650B2 JP7666650B2 (ja) | 2025-04-22 |
Family
ID=86998616
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023570674A Active JP7666650B2 (ja) | 2021-12-27 | 2022-10-25 | 半導体装置 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240096965A1 (https=) |
| JP (1) | JP7666650B2 (https=) |
| CN (1) | CN117397042A (https=) |
| WO (1) | WO2023127255A1 (https=) |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12154895B2 (en) * | 2022-06-02 | 2024-11-26 | Nanya Technology Corporation | Semiconductor device with guard ring |
| US12176342B2 (en) * | 2022-06-02 | 2024-12-24 | Nanya Technology Corporation | Method for fabricating semiconductor device with guard ring |
| JP7756607B2 (ja) * | 2022-08-22 | 2025-10-20 | 株式会社東芝 | 半導体装置及びその製造方法 |
| JP2024098458A (ja) * | 2023-01-10 | 2024-07-23 | 富士電機株式会社 | 半導体装置 |
| JP2025049726A (ja) * | 2023-09-22 | 2025-04-04 | 株式会社東芝 | 半導体装置 |
| CN121058359A (zh) * | 2023-11-08 | 2025-12-02 | 富士电机株式会社 | 半导体装置、半导体模块以及半导体装置的制造方法 |
| WO2025170006A1 (ja) * | 2024-02-09 | 2025-08-14 | 富士電機株式会社 | 半導体装置 |
| WO2025177946A1 (ja) * | 2024-02-21 | 2025-08-28 | 富士電機株式会社 | 半導体装置 |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6507609B2 (ja) * | 2014-12-08 | 2019-05-08 | 富士電機株式会社 | 半導体装置 |
| JP7325931B2 (ja) * | 2017-05-16 | 2023-08-15 | 富士電機株式会社 | 半導体装置 |
| JP6494733B2 (ja) * | 2017-12-06 | 2019-04-03 | ローム株式会社 | 半導体装置 |
-
2022
- 2022-10-25 CN CN202280038046.5A patent/CN117397042A/zh active Pending
- 2022-10-25 JP JP2023570674A patent/JP7666650B2/ja active Active
- 2022-10-25 WO PCT/JP2022/039640 patent/WO2023127255A1/ja not_active Ceased
-
2023
- 2023-11-23 US US18/518,566 patent/US20240096965A1/en active Pending
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