JP7666650B2 - 半導体装置 - Google Patents

半導体装置 Download PDF

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Publication number
JP7666650B2
JP7666650B2 JP2023570674A JP2023570674A JP7666650B2 JP 7666650 B2 JP7666650 B2 JP 7666650B2 JP 2023570674 A JP2023570674 A JP 2023570674A JP 2023570674 A JP2023570674 A JP 2023570674A JP 7666650 B2 JP7666650 B2 JP 7666650B2
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Japan
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region
contact
trench
trench portion
emitter
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JP2023570674A
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English (en)
Japanese (ja)
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JPWO2023127255A1 (https=
JPWO2023127255A5 (https=
Inventor
要 三塚
祐樹 唐本
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Fuji Electric Co Ltd
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Fuji Electric Co Ltd
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Publication of JPWO2023127255A5 publication Critical patent/JPWO2023127255A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/01—Manufacture or treatment
    • H10D12/031—Manufacture or treatment of IGBTs
    • H10D12/032—Manufacture or treatment of IGBTs of vertical IGBTs
    • H10D12/038—Manufacture or treatment of IGBTs of vertical IGBTs having a recessed gate, e.g. trench-gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
    • H10D12/411—Insulated-gate bipolar transistors [IGBT]
    • H10D12/441—Vertical IGBTs
    • H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
    • H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/102—Constructional design considerations for preventing surface leakage or controlling electric field concentration
    • H10D62/103—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices
    • H10D62/105—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE] 
    • H10D62/106—Constructional design considerations for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse-biased devices by having particular doping profiles, shapes or arrangements of PN junctions; by having supplementary regions, e.g. junction termination extension [JTE]  having supplementary regions doped oppositely to or in rectifying contact with regions of the semiconductor bodies, e.g. guard rings with PN or Schottky junctions
    • H10D62/107—Buried supplementary regions, e.g. buried guard rings 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/124—Shapes, relative sizes or dispositions of the regions of semiconductor bodies or of junctions between the regions
    • H10D62/126—Top-view geometrical layouts of the regions or the junctions
    • H10D62/127—Top-view geometrical layouts of the regions or the junctions of cellular field-effect devices, e.g. multicellular DMOS transistors or IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/13—Semiconductor regions connected to electrodes carrying current to be rectified, amplified or switched, e.g. source or drain regions
    • H10D62/141—Anode or cathode regions of thyristors; Collector or emitter regions of gated bipolar-mode devices, e.g. of IGBTs
    • H10D62/145—Emitter regions of IGBTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/393—Body regions of DMOS transistors or IGBTs 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/112—Field plates comprising multiple field plate segments
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/111—Field plates
    • H10D64/117—Recessed field plates, e.g. trench field plates or buried field plates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
    • H10D64/311—Gate electrodes for field-effect devices
    • H10D64/411—Gate electrodes for field-effect devices for FETs
    • H10D64/511—Gate electrodes for field-effect devices for FETs for IGFETs
    • H10D64/512—Disposition of the gate electrodes, e.g. buried gates
    • H10D64/513—Disposition of the gate electrodes, e.g. buried gates within recesses in the substrate, e.g. trench gates, groove gates or buried gates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes

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  • Electrodes Of Semiconductors (AREA)
JP2023570674A 2021-12-27 2022-10-25 半導体装置 Active JP7666650B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021212016 2021-12-27
JP2021212016 2021-12-27
PCT/JP2022/039640 WO2023127255A1 (ja) 2021-12-27 2022-10-25 半導体装置

Publications (3)

Publication Number Publication Date
JPWO2023127255A1 JPWO2023127255A1 (https=) 2023-07-06
JPWO2023127255A5 JPWO2023127255A5 (https=) 2024-03-11
JP7666650B2 true JP7666650B2 (ja) 2025-04-22

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Family Applications (1)

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JP2023570674A Active JP7666650B2 (ja) 2021-12-27 2022-10-25 半導体装置

Country Status (4)

Country Link
US (1) US20240096965A1 (https=)
JP (1) JP7666650B2 (https=)
CN (1) CN117397042A (https=)
WO (1) WO2023127255A1 (https=)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12154895B2 (en) * 2022-06-02 2024-11-26 Nanya Technology Corporation Semiconductor device with guard ring
US12176342B2 (en) * 2022-06-02 2024-12-24 Nanya Technology Corporation Method for fabricating semiconductor device with guard ring
JP7756607B2 (ja) * 2022-08-22 2025-10-20 株式会社東芝 半導体装置及びその製造方法
JP2024098458A (ja) * 2023-01-10 2024-07-23 富士電機株式会社 半導体装置
JP2025049726A (ja) * 2023-09-22 2025-04-04 株式会社東芝 半導体装置
CN121058359A (zh) * 2023-11-08 2025-12-02 富士电机株式会社 半导体装置、半导体模块以及半导体装置的制造方法
WO2025170006A1 (ja) * 2024-02-09 2025-08-14 富士電機株式会社 半導体装置
WO2025177946A1 (ja) * 2024-02-21 2025-08-28 富士電機株式会社 半導体装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016111239A (ja) 2014-12-08 2016-06-20 富士電機株式会社 半導体装置
JP2018061055A (ja) 2017-12-06 2018-04-12 ローム株式会社 半導体装置
JP2018195798A (ja) 2017-05-16 2018-12-06 富士電機株式会社 半導体装置

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016111239A (ja) 2014-12-08 2016-06-20 富士電機株式会社 半導体装置
JP2018195798A (ja) 2017-05-16 2018-12-06 富士電機株式会社 半導体装置
JP2018061055A (ja) 2017-12-06 2018-04-12 ローム株式会社 半導体装置

Also Published As

Publication number Publication date
WO2023127255A1 (ja) 2023-07-06
JPWO2023127255A1 (https=) 2023-07-06
US20240096965A1 (en) 2024-03-21
CN117397042A (zh) 2024-01-12

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