JPWO2023112672A5 - - Google Patents

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Publication number
JPWO2023112672A5
JPWO2023112672A5 JP2023567667A JP2023567667A JPWO2023112672A5 JP WO2023112672 A5 JPWO2023112672 A5 JP WO2023112672A5 JP 2023567667 A JP2023567667 A JP 2023567667A JP 2023567667 A JP2023567667 A JP 2023567667A JP WO2023112672 A5 JPWO2023112672 A5 JP WO2023112672A5
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JP
Japan
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ring
aromatic
formula
compound
group
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Pending
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JP2023567667A
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English (en)
Japanese (ja)
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JPWO2023112672A1 (https=
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Application filed filed Critical
Priority claimed from PCT/JP2022/044114 external-priority patent/WO2023112672A1/ja
Publication of JPWO2023112672A1 publication Critical patent/JPWO2023112672A1/ja
Publication of JPWO2023112672A5 publication Critical patent/JPWO2023112672A5/ja
Pending legal-status Critical Current

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JP2023567667A 2021-12-15 2022-11-30 Pending JPWO2023112672A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021203109 2021-12-15
PCT/JP2022/044114 WO2023112672A1 (ja) 2021-12-15 2022-11-30 半導体基板の製造方法及び組成物

Publications (2)

Publication Number Publication Date
JPWO2023112672A1 JPWO2023112672A1 (https=) 2023-06-22
JPWO2023112672A5 true JPWO2023112672A5 (https=) 2025-10-20

Family

ID=86774186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023567667A Pending JPWO2023112672A1 (https=) 2021-12-15 2022-11-30

Country Status (3)

Country Link
JP (1) JPWO2023112672A1 (https=)
TW (1) TW202328243A (https=)
WO (1) WO2023112672A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025010495A (ja) * 2023-07-07 2025-01-21 信越化学工業株式会社 レジスト下層膜形成方法及びパターン形成方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5387935B2 (ja) * 2006-03-09 2014-01-15 株式会社リコー π共役ポリマー
JP7064149B2 (ja) * 2017-03-10 2022-05-10 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法並びにパターニングされた基板の製造方法
KR102697600B1 (ko) * 2018-04-23 2024-08-23 제이에스알 가부시끼가이샤 레지스트 하층막 형성용 조성물, 레지스트 하층막 및 그의 형성 방법 그리고 패턴 형성 방법
CN110156616B (zh) * 2019-05-22 2022-02-25 吉林师范大学 基于芴乙烯桥联芳香环核的免掺杂空穴传输材料的合成方法及其在钙钛矿电池中的应用
CN114341743A (zh) * 2019-09-17 2022-04-12 Jsr株式会社 组合物、抗蚀剂底层膜、抗蚀剂底层膜的形成方法、经图案化的基板的制造方法及化合物

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