JPWO2023112672A1 - - Google Patents

Info

Publication number
JPWO2023112672A1
JPWO2023112672A1 JP2023567667A JP2023567667A JPWO2023112672A1 JP WO2023112672 A1 JPWO2023112672 A1 JP WO2023112672A1 JP 2023567667 A JP2023567667 A JP 2023567667A JP 2023567667 A JP2023567667 A JP 2023567667A JP WO2023112672 A1 JPWO2023112672 A1 JP WO2023112672A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2023567667A
Other languages
Japanese (ja)
Other versions
JPWO2023112672A5 (https=
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2023112672A1 publication Critical patent/JPWO2023112672A1/ja
Publication of JPWO2023112672A5 publication Critical patent/JPWO2023112672A5/ja
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/02—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom condensed with one carbocyclic ring
    • C07D209/04—Indoles; Hydrogenated indoles
    • C07D209/08—Indoles; Hydrogenated indoles with only hydrogen atoms or radicals containing only hydrogen and carbon atoms, directly attached to carbon atoms of the hetero ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07D—HETEROCYCLIC COMPOUNDS
    • C07D209/00—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom
    • C07D209/02—Heterocyclic compounds containing five-membered rings, condensed with other rings, with one nitrogen atom as the only ring hetero atom condensed with one carbocyclic ring
    • C07D209/04—Indoles; Hydrogenated indoles
    • C07D209/10—Indoles; Hydrogenated indoles with substituted hydrocarbon radicals attached to carbon atoms of the hetero ring
    • C07D209/14—Radicals substituted by nitrogen atoms, not forming part of a nitro radical
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/09—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers
    • G03F7/11—Photosensitive materials characterised by structural details, e.g. supports, auxiliary layers having cover layers or intermediate layers, e.g. subbing layers

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Health & Medical Sciences (AREA)
  • Architecture (AREA)
  • Structural Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
JP2023567667A 2021-12-15 2022-11-30 Pending JPWO2023112672A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021203109 2021-12-15
PCT/JP2022/044114 WO2023112672A1 (ja) 2021-12-15 2022-11-30 半導体基板の製造方法及び組成物

Publications (2)

Publication Number Publication Date
JPWO2023112672A1 true JPWO2023112672A1 (https=) 2023-06-22
JPWO2023112672A5 JPWO2023112672A5 (https=) 2025-10-20

Family

ID=86774186

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023567667A Pending JPWO2023112672A1 (https=) 2021-12-15 2022-11-30

Country Status (3)

Country Link
JP (1) JPWO2023112672A1 (https=)
TW (1) TW202328243A (https=)
WO (1) WO2023112672A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2025010495A (ja) * 2023-07-07 2025-01-21 信越化学工業株式会社 レジスト下層膜形成方法及びパターン形成方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007270123A (ja) * 2006-03-09 2007-10-18 Ricoh Co Ltd π共役ポリマー
WO2018164267A1 (ja) * 2017-03-10 2018-09-13 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法並びにパターニングされた基板の製造方法
CN110156616A (zh) * 2019-05-22 2019-08-23 吉林师范大学 基于芴乙烯桥联芳香环核的免掺杂空穴传输材料的合成方法及其在钙钛矿电池中的应用
WO2019208212A1 (ja) * 2018-04-23 2019-10-31 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法並びにパターン形成方法
WO2021054337A1 (ja) * 2019-09-17 2021-03-25 Jsr株式会社 組成物、レジスト下層膜、レジスト下層膜の形成方法、パターニングされた基板の製造方法及び化合物

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007270123A (ja) * 2006-03-09 2007-10-18 Ricoh Co Ltd π共役ポリマー
WO2018164267A1 (ja) * 2017-03-10 2018-09-13 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法並びにパターニングされた基板の製造方法
WO2019208212A1 (ja) * 2018-04-23 2019-10-31 Jsr株式会社 レジスト下層膜形成用組成物、レジスト下層膜及びその形成方法並びにパターン形成方法
CN110156616A (zh) * 2019-05-22 2019-08-23 吉林师范大学 基于芴乙烯桥联芳香环核的免掺杂空穴传输材料的合成方法及其在钙钛矿电池中的应用
WO2021054337A1 (ja) * 2019-09-17 2021-03-25 Jsr株式会社 組成物、レジスト下層膜、レジスト下層膜の形成方法、パターニングされた基板の製造方法及び化合物

Also Published As

Publication number Publication date
WO2023112672A1 (ja) 2023-06-22
TW202328243A (zh) 2023-07-16

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