JPWO2023095287A5 - - Google Patents

Download PDF

Info

Publication number
JPWO2023095287A5
JPWO2023095287A5 JP2023563447A JP2023563447A JPWO2023095287A5 JP WO2023095287 A5 JPWO2023095287 A5 JP WO2023095287A5 JP 2023563447 A JP2023563447 A JP 2023563447A JP 2023563447 A JP2023563447 A JP 2023563447A JP WO2023095287 A5 JPWO2023095287 A5 JP WO2023095287A5
Authority
JP
Japan
Prior art keywords
layer
helical channel
hinged
region
insulator layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2023563447A
Other languages
English (en)
Japanese (ja)
Other versions
JP7729398B2 (ja
JPWO2023095287A1 (https=
Filing date
Publication date
Application filed filed Critical
Priority claimed from PCT/JP2021/043410 external-priority patent/WO2023095287A1/ja
Publication of JPWO2023095287A1 publication Critical patent/JPWO2023095287A1/ja
Publication of JPWO2023095287A5 publication Critical patent/JPWO2023095287A5/ja
Priority to JP2025114844A priority Critical patent/JP2025135013A/ja
Application granted granted Critical
Publication of JP7729398B2 publication Critical patent/JP7729398B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

JP2023563447A 2021-11-26 2021-11-26 構造体及び構造体の製造方法 Active JP7729398B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2025114844A JP2025135013A (ja) 2021-11-26 2025-07-08 量子ビット及び量子演算装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2021/043410 WO2023095287A1 (ja) 2021-11-26 2021-11-26 構造体、量子ビット、量子演算装置及び構造体の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2025114844A Division JP2025135013A (ja) 2021-11-26 2025-07-08 量子ビット及び量子演算装置

Publications (3)

Publication Number Publication Date
JPWO2023095287A1 JPWO2023095287A1 (https=) 2023-06-01
JPWO2023095287A5 true JPWO2023095287A5 (https=) 2024-08-08
JP7729398B2 JP7729398B2 (ja) 2025-08-26

Family

ID=86539164

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2023563447A Active JP7729398B2 (ja) 2021-11-26 2021-11-26 構造体及び構造体の製造方法
JP2025114844A Pending JP2025135013A (ja) 2021-11-26 2025-07-08 量子ビット及び量子演算装置

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2025114844A Pending JP2025135013A (ja) 2021-11-26 2025-07-08 量子ビット及び量子演算装置

Country Status (3)

Country Link
US (1) US20240306518A1 (https=)
JP (2) JP7729398B2 (https=)
WO (1) WO2023095287A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPWO2023181247A1 (https=) * 2022-03-24 2023-09-28

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11727295B2 (en) 2019-04-02 2023-08-15 International Business Machines Corporation Tunable superconducting resonator for quantum computing devices

Similar Documents

Publication Publication Date Title
KR102514747B1 (ko) 개선된 산화 제어를 가능하게 하는 산화물 계면을 갖는 수직 자화된 강자성 층들
EP3563309B1 (en) Selective capping to reduce quantum bit dephasing
US8174800B2 (en) Magnetoresistive element, method of manufacturing the same, and magnetic multilayered film manufacturing apparatus
JP2006005356A (ja) 磁気トンネル接合素子およびその形成方法、磁気メモリ構造ならびにトンネル磁気抵抗効果型再生ヘッド
TWI569483B (zh) 垂直磁化穿隧式磁阻元件及其製造方法
JPWO2023095287A5 (https=)
JP2015212994A (ja) 近接場トランスデューサ（ｎｆｔ）の一部を形成する方法およびそれによって形成された物品
KR102614117B1 (ko) 반도체 소자용 커패시터, 반도체 소자용 커패시터의 제조 방법, 및 디램 소자
KR101892632B1 (ko) 백금족 산화물과 주석 산화물의 화합물을 갖는 반도체 메모리 소자 및 그 제조방법
WO2022017137A1 (zh) 半导体器件和半导体器件的制造方法
CN105514263A (zh) 阻变式存储器单元及其制造方法和阻变式存储器
CN111969100A (zh) 基于TaN的约瑟夫森结及其制备方法
US5313074A (en) Josephson device formed over a recess step with protective layer
CN110061029B (zh) 一种磁性随机存储器记忆单元及其制造方法
US6714387B1 (en) Spin valve head with reduced element gap
JPWO2023047461A5 (https=)
US20150146341A1 (en) ALD dielectric films with leakage-reducing impurity layers
CN110061126B (zh) 一种磁性随机存储器记忆单元及其制造方法
JP2002133614A5 (https=)
JP2023531422A5 (https=)
JPWO2024023967A5 (https=)
CN103852184B (zh) 具有大电阻温度系数的薄膜以及其制造方法
Popovici et al. Low leakage stoichiometric SrTiO3 dielectric for advanced metal–insulator–metal capacitors
JP5062508B2 (ja) 超電導素子とその製造方法
KR20180038599A (ko) 하드 마스크 제조방법