JPWO2023074374A5 - - Google Patents

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Publication number
JPWO2023074374A5
JPWO2023074374A5 JP2023556301A JP2023556301A JPWO2023074374A5 JP WO2023074374 A5 JPWO2023074374 A5 JP WO2023074374A5 JP 2023556301 A JP2023556301 A JP 2023556301A JP 2023556301 A JP2023556301 A JP 2023556301A JP WO2023074374 A5 JPWO2023074374 A5 JP WO2023074374A5
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JP
Japan
Prior art keywords
structure according
gallium nitride
laminated structure
layer
buffer layer
Prior art date
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JP2023556301A
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English (en)
Japanese (ja)
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JP7757413B2 (ja
JPWO2023074374A1 (https=
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Priority claimed from PCT/JP2022/038069 external-priority patent/WO2023074374A1/ja
Publication of JPWO2023074374A1 publication Critical patent/JPWO2023074374A1/ja
Publication of JPWO2023074374A5 publication Critical patent/JPWO2023074374A5/ja
Application granted granted Critical
Publication of JP7757413B2 publication Critical patent/JP7757413B2/ja
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JP2023556301A 2021-10-28 2022-10-12 積層構造体及び窒化ガリウム系半導体デバイス Active JP7757413B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021176842 2021-10-28
JP2021176842 2021-10-28
PCT/JP2022/038069 WO2023074374A1 (ja) 2021-10-28 2022-10-12 積層構造体及び窒化ガリウム系半導体デバイス

Publications (3)

Publication Number Publication Date
JPWO2023074374A1 JPWO2023074374A1 (https=) 2023-05-04
JPWO2023074374A5 true JPWO2023074374A5 (https=) 2024-07-19
JP7757413B2 JP7757413B2 (ja) 2025-10-21

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ID=86157987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023556301A Active JP7757413B2 (ja) 2021-10-28 2022-10-12 積層構造体及び窒化ガリウム系半導体デバイス

Country Status (4)

Country Link
US (1) US20240282889A1 (https=)
JP (1) JP7757413B2 (https=)
TW (1) TWI834343B (https=)
WO (1) WO2023074374A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240363342A1 (en) * 2023-04-27 2024-10-31 Robert Bosch Gmbh METHODS AND STRUCTURES FOR REDUCING DEFORMATIONS OF GALLIUM NITRIDE (GaN) DEVICES
TW202517807A (zh) * 2023-10-02 2025-05-01 日商東曹股份有限公司 氮化鎵膜、其製造方法、積層基材、半導體元件和電子設備
WO2025164205A1 (ja) * 2024-01-29 2025-08-07 株式会社ジャパンディスプレイ 積層構造体、および積層構造体の作製方法

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5049659B2 (ja) 2007-06-11 2012-10-17 昭和電工株式会社 Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2012119569A (ja) 2010-12-02 2012-06-21 Ulvac Japan Ltd 窒化物半導体素子
JP6123421B2 (ja) 2012-03-30 2017-05-10 三菱化学株式会社 Ｉｉｉ族窒化物結晶塊
JP7031181B2 (ja) 2016-09-13 2022-03-08 東ソー株式会社 窒化ガリウム系膜ならびにその製造方法
TWI825187B (zh) * 2018-10-09 2023-12-11 日商東京威力科創股份有限公司 氮化物半導體膜之形成方法
JP2021163900A (ja) 2020-04-01 2021-10-11 株式会社ジャパンディスプレイ 発光素子および表示装置

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