JP7757413B2 - 積層構造体及び窒化ガリウム系半導体デバイス - Google Patents

積層構造体及び窒化ガリウム系半導体デバイス

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Publication number
JP7757413B2
JP7757413B2 JP2023556301A JP2023556301A JP7757413B2 JP 7757413 B2 JP7757413 B2 JP 7757413B2 JP 2023556301 A JP2023556301 A JP 2023556301A JP 2023556301 A JP2023556301 A JP 2023556301A JP 7757413 B2 JP7757413 B2 JP 7757413B2
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JP
Japan
Prior art keywords
gallium nitride
layer
buffer layer
sputtering
less
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2023556301A
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English (en)
Japanese (ja)
Other versions
JPWO2023074374A5 (https=
JPWO2023074374A1 (https=
Inventor
眞澄 西村
将志 津吹
義弘 上岡
祐也 末本
雅実 召田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tosoh Corp
Japan Display Inc
Original Assignee
Tosoh Corp
Japan Display Inc
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Filing date
Publication date
Application filed by Tosoh Corp, Japan Display Inc filed Critical Tosoh Corp
Publication of JPWO2023074374A1 publication Critical patent/JPWO2023074374A1/ja
Publication of JPWO2023074374A5 publication Critical patent/JPWO2023074374A5/ja
Application granted granted Critical
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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/01—Manufacture or treatment
    • H10D30/021—Manufacture or treatment of FETs having insulated gates [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/60—Insulated-gate field-effect transistors [IGFET]
    • H10D30/67—Thin-film transistors [TFT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions 
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/815—Bodies having stress relaxation structures, e.g. buffer layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/817—Bodies characterised by the crystal structures or orientations, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Recrystallisation Techniques (AREA)
JP2023556301A 2021-10-28 2022-10-12 積層構造体及び窒化ガリウム系半導体デバイス Active JP7757413B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021176842 2021-10-28
JP2021176842 2021-10-28
PCT/JP2022/038069 WO2023074374A1 (ja) 2021-10-28 2022-10-12 積層構造体及び窒化ガリウム系半導体デバイス

Publications (3)

Publication Number Publication Date
JPWO2023074374A1 JPWO2023074374A1 (https=) 2023-05-04
JPWO2023074374A5 JPWO2023074374A5 (https=) 2024-07-19
JP7757413B2 true JP7757413B2 (ja) 2025-10-21

Family

ID=86157987

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023556301A Active JP7757413B2 (ja) 2021-10-28 2022-10-12 積層構造体及び窒化ガリウム系半導体デバイス

Country Status (4)

Country Link
US (1) US20240282889A1 (https=)
JP (1) JP7757413B2 (https=)
TW (1) TWI834343B (https=)
WO (1) WO2023074374A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20240363342A1 (en) * 2023-04-27 2024-10-31 Robert Bosch Gmbh METHODS AND STRUCTURES FOR REDUCING DEFORMATIONS OF GALLIUM NITRIDE (GaN) DEVICES
TW202517807A (zh) * 2023-10-02 2025-05-01 日商東曹股份有限公司 氮化鎵膜、其製造方法、積層基材、半導體元件和電子設備
WO2025164205A1 (ja) * 2024-01-29 2025-08-07 株式会社ジャパンディスプレイ 積層構造体、および積層構造体の作製方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008306114A (ja) 2007-06-11 2008-12-18 Showa Denko Kk Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2012119569A (ja) 2010-12-02 2012-06-21 Ulvac Japan Ltd 窒化物半導体素子
JP2013212978A (ja) 2012-03-30 2013-10-17 Mitsubishi Chemicals Corp Ｉｉｉ族窒化物結晶塊
JP2018046277A (ja) 2016-09-13 2018-03-22 東ソー株式会社 窒化ガリウム系膜ならびにその製造方法
WO2020075599A1 (ja) 2018-10-09 2020-04-16 東京エレクトロン株式会社 窒化物半導体膜の形成方法
JP2021163900A (ja) 2020-04-01 2021-10-11 株式会社ジャパンディスプレイ 発光素子および表示装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2008306114A (ja) 2007-06-11 2008-12-18 Showa Denko Kk Ｉｉｉ族窒化物半導体の製造方法、ｉｉｉ族窒化物半導体発光素子の製造方法、及びｉｉｉ族窒化物半導体発光素子、並びにランプ
JP2012119569A (ja) 2010-12-02 2012-06-21 Ulvac Japan Ltd 窒化物半導体素子
JP2013212978A (ja) 2012-03-30 2013-10-17 Mitsubishi Chemicals Corp Ｉｉｉ族窒化物結晶塊
JP2018046277A (ja) 2016-09-13 2018-03-22 東ソー株式会社 窒化ガリウム系膜ならびにその製造方法
WO2020075599A1 (ja) 2018-10-09 2020-04-16 東京エレクトロン株式会社 窒化物半導体膜の形成方法
JP2021163900A (ja) 2020-04-01 2021-10-11 株式会社ジャパンディスプレイ 発光素子および表示装置

Also Published As

Publication number Publication date
US20240282889A1 (en) 2024-08-22
WO2023074374A1 (ja) 2023-05-04
TW202328021A (zh) 2023-07-16
TWI834343B (zh) 2024-03-01
JPWO2023074374A1 (https=) 2023-05-04

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