JPWO2023008458A1 - - Google Patents
Info
- Publication number
- JPWO2023008458A1 JPWO2023008458A1 JP2023538580A JP2023538580A JPWO2023008458A1 JP WO2023008458 A1 JPWO2023008458 A1 JP WO2023008458A1 JP 2023538580 A JP2023538580 A JP 2023538580A JP 2023538580 A JP2023538580 A JP 2023538580A JP WO2023008458 A1 JPWO2023008458 A1 JP WO2023008458A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0202—Cleaving
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0201—Separation of the wafer into individual elements, e.g. by dicing, cleaving, etching or directly during growth
- H01S5/0203—Etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0217—Removal of the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/173—The laser chip comprising special buffer layers, e.g. dislocation prevention or reduction
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2301/00—Functional characteristics
- H01S2301/17—Semiconductor lasers comprising special layers
- H01S2301/176—Specific passivation layers on surfaces other than the emission facet
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/12—Pendeo epitaxial lateral overgrowth [ELOG], e.g. for growing GaN based blue laser diodes
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
- H01S5/0215—Bonding to the substrate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/023—Mount members, e.g. sub-mount members
- H01S5/02315—Support members, e.g. bases or carriers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/0234—Up-side down mountings, e.g. Flip-chip, epi-side down mountings or junction down mountings
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/02—Structural details or components not essential to laser action
- H01S5/022—Mountings; Housings
- H01S5/0233—Mounting configuration of laser chips
- H01S5/02345—Wire-bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0425—Electrodes, e.g. characterised by the structure
- H01S5/04254—Electrodes, e.g. characterised by the structure characterised by the shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
- H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Geometry (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025024357A JP7775512B2 (ja) | 2021-07-30 | 2025-02-18 | 半導体基板、半導体デバイスの製造方法 |
| JP2025192692A JP2026021573A (ja) | 2021-07-30 | 2025-11-12 | 半導体基板、半導体デバイスの製造方法 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021125395 | 2021-07-30 | ||
| JP2021125395 | 2021-07-30 | ||
| PCT/JP2022/028868 WO2023008458A1 (ja) | 2021-07-30 | 2022-07-27 | 半導体デバイスの製造方法、テンプレート基板、半導体デバイス、電子機器、および半導体デバイスの製造装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025024357A Division JP7775512B2 (ja) | 2021-07-30 | 2025-02-18 | 半導体基板、半導体デバイスの製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2023008458A1 true JPWO2023008458A1 (https=) | 2023-02-02 |
| JPWO2023008458A5 JPWO2023008458A5 (https=) | 2024-04-17 |
| JP7638382B2 JP7638382B2 (ja) | 2025-03-03 |
Family
ID=85087707
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023538580A Active JP7638382B2 (ja) | 2021-07-30 | 2022-07-27 | 半導体デバイスの製造方法、テンプレート基板、半導体デバイス、電子機器、および半導体デバイスの製造装置 |
| JP2025024357A Active JP7775512B2 (ja) | 2021-07-30 | 2025-02-18 | 半導体基板、半導体デバイスの製造方法 |
| JP2025192692A Pending JP2026021573A (ja) | 2021-07-30 | 2025-11-12 | 半導体基板、半導体デバイスの製造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025024357A Active JP7775512B2 (ja) | 2021-07-30 | 2025-02-18 | 半導体基板、半導体デバイスの製造方法 |
| JP2025192692A Pending JP2026021573A (ja) | 2021-07-30 | 2025-11-12 | 半導体基板、半導体デバイスの製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US20240348003A1 (https=) |
| EP (1) | EP4379977A4 (https=) |
| JP (3) | JP7638382B2 (https=) |
| WO (1) | WO2023008458A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7813820B2 (ja) * | 2022-02-10 | 2026-02-13 | 京セラ株式会社 | レーザ素子の製造方法および製造装置 |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0521901A (ja) * | 1991-07-11 | 1993-01-29 | Clarion Co Ltd | 半導体レーザの作製方法 |
| JP2005191547A (ja) * | 2003-12-01 | 2005-07-14 | Matsushita Electric Ind Co Ltd | 半導体レーザ素子及びその製造方法 |
| JP2006165407A (ja) * | 2004-12-10 | 2006-06-22 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子 |
| JP2007073999A (ja) * | 2001-06-15 | 2007-03-22 | Nichia Chem Ind Ltd | 半導体レーザ素子 |
| JP2008305911A (ja) * | 2007-06-06 | 2008-12-18 | Sharp Corp | 窒化物系半導体レーザ素子及びその製造方法 |
| JP2012019165A (ja) * | 2010-07-09 | 2012-01-26 | Panasonic Corp | 半導体レーザ装置 |
| JP2020536372A (ja) * | 2017-09-28 | 2020-12-10 | ソラア レイザー ダイオード インク | ガリウム及び窒素含有レーザ源を有するインテリジェント可視光 |
| WO2020262560A1 (ja) * | 2019-06-26 | 2020-12-30 | 京セラ株式会社 | 積層体および積層体の製造方法 |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10107380A (ja) * | 1996-09-30 | 1998-04-24 | Toshiba Corp | 積層体のへき開方法 |
| JP2003017791A (ja) * | 2001-07-03 | 2003-01-17 | Sharp Corp | 窒化物半導体素子及びこの窒化物半導体素子の製造方法 |
| JP4901477B2 (ja) * | 2004-10-15 | 2012-03-21 | パナソニック株式会社 | 窒化化合物半導体素子およびその製造方法 |
| JP5076746B2 (ja) * | 2006-09-04 | 2012-11-21 | 日亜化学工業株式会社 | 窒化物半導体レーザ素子及びその製造方法 |
| JP2008252069A (ja) | 2007-03-06 | 2008-10-16 | Sanyo Electric Co Ltd | 半導体レーザ素子の製造方法および半導体レーザ素子 |
| CN113767452B (zh) * | 2019-03-12 | 2025-02-21 | 加利福尼亚大学董事会 | 使用支撑板移除一条的一个或多个装置的方法 |
-
2022
- 2022-07-27 JP JP2023538580A patent/JP7638382B2/ja active Active
- 2022-07-27 US US18/292,721 patent/US20240348003A1/en active Pending
- 2022-07-27 WO PCT/JP2022/028868 patent/WO2023008458A1/ja not_active Ceased
- 2022-07-27 EP EP22849519.8A patent/EP4379977A4/en active Pending
-
2025
- 2025-02-18 JP JP2025024357A patent/JP7775512B2/ja active Active
- 2025-11-12 JP JP2025192692A patent/JP2026021573A/ja active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0521901A (ja) * | 1991-07-11 | 1993-01-29 | Clarion Co Ltd | 半導体レーザの作製方法 |
| JP2007073999A (ja) * | 2001-06-15 | 2007-03-22 | Nichia Chem Ind Ltd | 半導体レーザ素子 |
| JP2005191547A (ja) * | 2003-12-01 | 2005-07-14 | Matsushita Electric Ind Co Ltd | 半導体レーザ素子及びその製造方法 |
| JP2006165407A (ja) * | 2004-12-10 | 2006-06-22 | Nichia Chem Ind Ltd | 窒化物半導体レーザ素子 |
| JP2008305911A (ja) * | 2007-06-06 | 2008-12-18 | Sharp Corp | 窒化物系半導体レーザ素子及びその製造方法 |
| JP2012019165A (ja) * | 2010-07-09 | 2012-01-26 | Panasonic Corp | 半導体レーザ装置 |
| JP2020536372A (ja) * | 2017-09-28 | 2020-12-10 | ソラア レイザー ダイオード インク | ガリウム及び窒素含有レーザ源を有するインテリジェント可視光 |
| WO2020262560A1 (ja) * | 2019-06-26 | 2020-12-30 | 京セラ株式会社 | 積層体および積層体の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| US20240348003A1 (en) | 2024-10-17 |
| WO2023008458A1 (ja) | 2023-02-02 |
| JP7638382B2 (ja) | 2025-03-03 |
| EP4379977A4 (en) | 2024-11-13 |
| EP4379977A1 (en) | 2024-06-05 |
| JP7775512B2 (ja) | 2025-11-25 |
| JP2026021573A (ja) | 2026-02-10 |
| JP2025081489A (ja) | 2025-05-27 |
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