JPWO2022249915A5 - - Google Patents

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Publication number
JPWO2022249915A5
JPWO2022249915A5 JP2023523420A JP2023523420A JPWO2022249915A5 JP WO2022249915 A5 JPWO2022249915 A5 JP WO2022249915A5 JP 2023523420 A JP2023523420 A JP 2023523420A JP 2023523420 A JP2023523420 A JP 2023523420A JP WO2022249915 A5 JPWO2022249915 A5 JP WO2022249915A5
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JP
Japan
Prior art keywords
silicon carbide
less
main surface
carbide epitaxial
substrate
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Pending
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JP2023523420A
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English (en)
Japanese (ja)
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JPWO2022249915A1 (https=
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Priority claimed from PCT/JP2022/020370 external-priority patent/WO2022249915A1/ja
Publication of JPWO2022249915A1 publication Critical patent/JPWO2022249915A1/ja
Publication of JPWO2022249915A5 publication Critical patent/JPWO2022249915A5/ja
Pending legal-status Critical Current

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JP2023523420A 2021-05-25 2022-05-16 Pending JPWO2022249915A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2021087624 2021-05-25
PCT/JP2022/020370 WO2022249915A1 (ja) 2021-05-25 2022-05-16 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2022249915A1 JPWO2022249915A1 (https=) 2022-12-01
JPWO2022249915A5 true JPWO2022249915A5 (https=) 2024-02-28

Family

ID=84230020

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023523420A Pending JPWO2022249915A1 (https=) 2021-05-25 2022-05-16

Country Status (3)

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US (1) US20240363696A1 (https=)
JP (1) JPWO2022249915A1 (https=)
WO (1) WO2022249915A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12516443B2 (en) * 2021-02-15 2026-01-06 Sumitomo Electric Industries, Ltd. Silicon carbide epitaxial substrate

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140054609A1 (en) * 2012-08-26 2014-02-27 Cree, Inc. Large high-quality epitaxial wafers
CN106796886B (zh) * 2014-08-29 2020-05-01 住友电气工业株式会社 碳化硅半导体器件和用于制造碳化硅半导体器件的方法
JP2016127177A (ja) * 2015-01-06 2016-07-11 住友電気工業株式会社 炭化珪素基板、炭化珪素半導体装置および炭化珪素基板の製造方法
WO2016185819A1 (ja) * 2015-05-18 2016-11-24 住友電気工業株式会社 炭化珪素エピタキシャル基板の製造方法、炭化珪素エピタキシャル基板、炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP6584253B2 (ja) * 2015-09-16 2019-10-02 ローム株式会社 ＳｉＣエピタキシャルウェハ、ＳｉＣエピタキシャルウェハの製造装置、ＳｉＣエピタキシャルウェハの製造方法、および半導体装置
JP6481582B2 (ja) * 2015-10-13 2019-03-13 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法
DE102019114328B4 (de) * 2018-05-31 2022-03-03 Rohm Co. Ltd Halbleitersubstratstruktur und leistungshalbleitervorrichtung

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