JPWO2022249914A5 - - Google Patents

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JPWO2022249914A5
JPWO2022249914A5 JP2023523419A JP2023523419A JPWO2022249914A5 JP WO2022249914 A5 JPWO2022249914 A5 JP WO2022249914A5 JP 2023523419 A JP2023523419 A JP 2023523419A JP 2023523419 A JP2023523419 A JP 2023523419A JP WO2022249914 A5 JPWO2022249914 A5 JP WO2022249914A5
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JP
Japan
Prior art keywords
silicon carbide
main surface
carbide epitaxial
less
substrate
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JP2023523419A
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English (en)
Japanese (ja)
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JPWO2022249914A1 (https=
JP7772061B2 (ja
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Priority claimed from PCT/JP2022/020369 external-priority patent/WO2022249914A1/ja
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Publication of JPWO2022249914A5 publication Critical patent/JPWO2022249914A5/ja
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JP2023523419A 2021-05-25 2022-05-16 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 Active JP7772061B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021087625 2021-05-25
JP2021087625 2021-05-25
PCT/JP2022/020369 WO2022249914A1 (ja) 2021-05-25 2022-05-16 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Publications (3)

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JPWO2022249914A1 JPWO2022249914A1 (https=) 2022-12-01
JPWO2022249914A5 true JPWO2022249914A5 (https=) 2024-02-27
JP7772061B2 JP7772061B2 (ja) 2025-11-18

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ID=84230017

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JP2023523419A Active JP7772061B2 (ja) 2021-05-25 2022-05-16 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Country Status (3)

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US (1) US20240274434A1 (https=)
JP (1) JP7772061B2 (https=)
WO (1) WO2022249914A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4711492A1 (en) * 2024-09-12 2026-03-18 LPE S.p.A. Photon-assisted chemical etching of silicon carbide films from reaction chamber parts

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016185819A1 (ja) * 2015-05-18 2016-11-24 住友電気工業株式会社 炭化珪素エピタキシャル基板の製造方法、炭化珪素エピタキシャル基板、炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP6584253B2 (ja) * 2015-09-16 2019-10-02 ローム株式会社 ＳｉＣエピタキシャルウェハ、ＳｉＣエピタキシャルウェハの製造装置、ＳｉＣエピタキシャルウェハの製造方法、および半導体装置
JP6481582B2 (ja) * 2015-10-13 2019-03-13 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

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