JP7772061B2 - 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 - Google Patents

炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

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Publication number
JP7772061B2
JP7772061B2 JP2023523419A JP2023523419A JP7772061B2 JP 7772061 B2 JP7772061 B2 JP 7772061B2 JP 2023523419 A JP2023523419 A JP 2023523419A JP 2023523419 A JP2023523419 A JP 2023523419A JP 7772061 B2 JP7772061 B2 JP 7772061B2
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Japan
Prior art keywords
silicon carbide
carbide epitaxial
main surface
less
substrate
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JP2023523419A
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English (en)
Japanese (ja)
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JPWO2022249914A1 (https=
JPWO2022249914A5 (https=
Inventor
弘樹 西原
翼 本家
貴也 宮瀬
太郎 榎薗
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Sumitomo Electric Industries Ltd
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Sumitomo Electric Industries Ltd
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2901—Materials
    • H10P14/2902—Materials being Group IVA materials
    • H10P14/2904—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/18—Epitaxial-layer growth characterised by the substrate
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/36—Carbides
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/24—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials using chemical vapour deposition [CVD]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/29—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by the substrates
    • H10P14/2926—Crystal orientations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3408—Silicon carbide
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3438—Doping during depositing
    • H10P14/3441—Conductivity type
    • H10P14/3442—N-type
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P36/00—Gettering within semiconductor bodies

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP2023523419A 2021-05-25 2022-05-16 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 Active JP7772061B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021087625 2021-05-25
JP2021087625 2021-05-25
PCT/JP2022/020369 WO2022249914A1 (ja) 2021-05-25 2022-05-16 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Publications (3)

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JPWO2022249914A1 JPWO2022249914A1 (https=) 2022-12-01
JPWO2022249914A5 JPWO2022249914A5 (https=) 2024-02-27
JP7772061B2 true JP7772061B2 (ja) 2025-11-18

Family

ID=84230017

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023523419A Active JP7772061B2 (ja) 2021-05-25 2022-05-16 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

Country Status (3)

Country Link
US (1) US20240274434A1 (https=)
JP (1) JP7772061B2 (https=)
WO (1) WO2022249914A1 (https=)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4711492A1 (en) * 2024-09-12 2026-03-18 LPE S.p.A. Photon-assisted chemical etching of silicon carbide films from reaction chamber parts

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2016185819A1 (ja) * 2015-05-18 2016-11-24 住友電気工業株式会社 炭化珪素エピタキシャル基板の製造方法、炭化珪素エピタキシャル基板、炭化珪素半導体装置の製造方法および炭化珪素半導体装置
JP6584253B2 (ja) * 2015-09-16 2019-10-02 ローム株式会社 ＳｉＣエピタキシャルウェハ、ＳｉＣエピタキシャルウェハの製造装置、ＳｉＣエピタキシャルウェハの製造方法、および半導体装置
JP6481582B2 (ja) * 2015-10-13 2019-03-13 住友電気工業株式会社 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法

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Publication number Publication date
WO2022249914A1 (ja) 2022-12-01
JPWO2022249914A1 (https=) 2022-12-01
US20240274434A1 (en) 2024-08-15

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