JPWO2022249915A1 - - Google Patents
Info
- Publication number
- JPWO2022249915A1 JPWO2022249915A1 JP2023523420A JP2023523420A JPWO2022249915A1 JP WO2022249915 A1 JPWO2022249915 A1 JP WO2022249915A1 JP 2023523420 A JP2023523420 A JP 2023523420A JP 2023523420 A JP2023523420 A JP 2023523420A JP WO2022249915 A1 JPWO2022249915 A1 JP WO2022249915A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
- C30B25/18—Epitaxial-layer growth characterised by the substrate
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/36—Carbides
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/50—Physical imperfections
- H10D62/57—Physical imperfections the imperfections being on the surface of the semiconductor body, e.g. the body having a roughened surface
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
- H10D62/832—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge being Group IV materials comprising two or more elements, e.g. SiGe
- H10D62/8325—Silicon carbide
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D12/00—Bipolar devices controlled by the field effect, e.g. insulated-gate bipolar transistors [IGBT]
- H10D12/411—Insulated-gate bipolar transistors [IGBT]
- H10D12/441—Vertical IGBTs
- H10D12/461—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions
- H10D12/481—Vertical IGBTs having non-planar surfaces, e.g. having trenches, recesses or pillars in the surfaces of the emitter, base or collector regions having gate structures on slanted surfaces, on vertical surfaces, or in grooves, e.g. trench gate IGBTs
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2021087624 | 2021-05-25 | ||
| PCT/JP2022/020370 WO2022249915A1 (ja) | 2021-05-25 | 2022-05-16 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2022249915A1 true JPWO2022249915A1 (https=) | 2022-12-01 |
| JPWO2022249915A5 JPWO2022249915A5 (https=) | 2024-02-28 |
Family
ID=84230020
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023523420A Pending JPWO2022249915A1 (https=) | 2021-05-25 | 2022-05-16 |
Country Status (3)
| Country | Link |
|---|---|
| US (1) | US20240363696A1 (https=) |
| JP (1) | JPWO2022249915A1 (https=) |
| WO (1) | WO2022249915A1 (https=) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12516443B2 (en) * | 2021-02-15 | 2026-01-06 | Sumitomo Electric Industries, Ltd. | Silicon carbide epitaxial substrate |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2017059670A (ja) * | 2015-09-16 | 2017-03-23 | ローム株式会社 | ＳｉＣエピタキシャルウェハ、ＳｉＣエピタキシャルウェハの製造装置、ＳｉＣエピタキシャルウェハの製造方法、および半導体装置 |
| JP2017076650A (ja) * | 2015-10-13 | 2017-04-20 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
| JP2020125241A (ja) * | 2015-05-18 | 2020-08-20 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板、炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20140054609A1 (en) * | 2012-08-26 | 2014-02-27 | Cree, Inc. | Large high-quality epitaxial wafers |
| CN106796886B (zh) * | 2014-08-29 | 2020-05-01 | 住友电气工业株式会社 | 碳化硅半导体器件和用于制造碳化硅半导体器件的方法 |
| JP2016127177A (ja) * | 2015-01-06 | 2016-07-11 | 住友電気工業株式会社 | 炭化珪素基板、炭化珪素半導体装置および炭化珪素基板の製造方法 |
| DE102019114328B4 (de) * | 2018-05-31 | 2022-03-03 | Rohm Co. Ltd | Halbleitersubstratstruktur und leistungshalbleitervorrichtung |
-
2022
- 2022-05-16 WO PCT/JP2022/020370 patent/WO2022249915A1/ja not_active Ceased
- 2022-05-16 US US18/563,422 patent/US20240363696A1/en active Pending
- 2022-05-16 JP JP2023523420A patent/JPWO2022249915A1/ja active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2020125241A (ja) * | 2015-05-18 | 2020-08-20 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板、炭化珪素半導体装置の製造方法および炭化珪素半導体装置 |
| JP2017059670A (ja) * | 2015-09-16 | 2017-03-23 | ローム株式会社 | ＳｉＣエピタキシャルウェハ、ＳｉＣエピタキシャルウェハの製造装置、ＳｉＣエピタキシャルウェハの製造方法、および半導体装置 |
| JP2017076650A (ja) * | 2015-10-13 | 2017-04-20 | 住友電気工業株式会社 | 炭化珪素エピタキシャル基板および炭化珪素半導体装置の製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2022249915A1 (ja) | 2022-12-01 |
| US20240363696A1 (en) | 2024-10-31 |
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