JPWO2022202448A5 - - Google Patents

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Publication number
JPWO2022202448A5
JPWO2022202448A5 JP2023509029A JP2023509029A JPWO2022202448A5 JP WO2022202448 A5 JPWO2022202448 A5 JP WO2022202448A5 JP 2023509029 A JP2023509029 A JP 2023509029A JP 2023509029 A JP2023509029 A JP 2023509029A JP WO2022202448 A5 JPWO2022202448 A5 JP WO2022202448A5
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JP
Japan
Prior art keywords
layer
type cladding
guide layer
nitride
bandgap energy
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JP2023509029A
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English (en)
Japanese (ja)
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JPWO2022202448A1 (https=
JP7854425B2 (ja
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Priority claimed from PCT/JP2022/011389 external-priority patent/WO2022202448A1/ja
Publication of JPWO2022202448A1 publication Critical patent/JPWO2022202448A1/ja
Publication of JPWO2022202448A5 publication Critical patent/JPWO2022202448A5/ja
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Publication of JP7854425B2 publication Critical patent/JP7854425B2/ja
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JP2023509029A 2021-03-24 2022-03-14 窒化物系半導体発光素子 Active JP7854425B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2021050352 2021-03-24
JP2021050352 2021-03-24
PCT/JP2022/011389 WO2022202448A1 (ja) 2021-03-24 2022-03-14 窒化物系半導体発光素子

Publications (3)

Publication Number Publication Date
JPWO2022202448A1 JPWO2022202448A1 (https=) 2022-09-29
JPWO2022202448A5 true JPWO2022202448A5 (https=) 2023-12-21
JP7854425B2 JP7854425B2 (ja) 2026-05-01

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JP2023509029A Active JP7854425B2 (ja) 2021-03-24 2022-03-14 窒化物系半導体発光素子

Country Status (4)

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US (1) US20230402821A1 (https=)
JP (1) JP7854425B2 (https=)
CN (1) CN117063359A (https=)
WO (1) WO2022202448A1 (https=)

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4161603B2 (ja) * 2001-03-28 2008-10-08 日亜化学工業株式会社 窒化物半導体素子
JP4075324B2 (ja) * 2001-05-10 2008-04-16 日亜化学工業株式会社 窒化物半導体素子
JP4401610B2 (ja) * 2001-12-28 2010-01-20 日亜化学工業株式会社 窒化物半導体レーザ素子
US7123637B2 (en) * 2003-03-20 2006-10-17 Xerox Corporation Nitride-based laser diode with GaN waveguide/cladding layer
JP2009224370A (ja) * 2008-03-13 2009-10-01 Rohm Co Ltd 窒化物半導体デバイス
US8897329B2 (en) * 2010-09-20 2014-11-25 Corning Incorporated Group III nitride-based green-laser diodes and waveguide structures thereof
JP5509275B2 (ja) * 2012-08-13 2014-06-04 株式会社東芝 半導体発光素子
US9444224B2 (en) * 2014-12-08 2016-09-13 Palo Alto Research Center Incorporated Nitride laser diode with engineered non-uniform alloy composition in the n-cladding layer
CN109075530B (zh) * 2016-05-13 2021-01-12 松下半导体解决方案株式会社 氮化物类发光元件
JP7137556B2 (ja) * 2017-03-16 2022-09-14 ヌヴォトンテクノロジージャパン株式会社 半導体レーザ装置、半導体レーザモジュール、溶接用レーザ光源システム、及び、半導体レーザ装置の製造方法
JP7150705B2 (ja) * 2017-05-01 2022-10-11 ヌヴォトンテクノロジージャパン株式会社 窒化物系発光装置

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