JPWO2019146478A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2019146478A5 JPWO2019146478A5 JP2019567021A JP2019567021A JPWO2019146478A5 JP WO2019146478 A5 JPWO2019146478 A5 JP WO2019146478A5 JP 2019567021 A JP2019567021 A JP 2019567021A JP 2019567021 A JP2019567021 A JP 2019567021A JP WO2019146478 A5 JPWO2019146478 A5 JP WO2019146478A5
- Authority
- JP
- Japan
- Prior art keywords
- layer
- semiconductor laser
- low
- concentration impurity
- clad layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims description 47
- 239000012535 impurity Substances 0.000 claims description 24
- 239000004020 conductor Substances 0.000 claims description 8
- 150000004767 nitrides Chemical class 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 4
- 230000003287 optical effect Effects 0.000 claims description 3
- 229910052710 silicon Inorganic materials 0.000 claims description 3
- 229910052799 carbon Inorganic materials 0.000 claims description 2
- 229910052749 magnesium Inorganic materials 0.000 claims description 2
- 229910052760 oxygen Inorganic materials 0.000 claims description 2
- BDVZHDCXCXJPSO-UHFFFAOYSA-N indium(3+) oxygen(2-) titanium(4+) Chemical compound [O-2].[Ti+4].[In+3] BDVZHDCXCXJPSO-UHFFFAOYSA-N 0.000 claims 1
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims 1
- 230000000052 comparative effect Effects 0.000 description 9
- 230000004048 modification Effects 0.000 description 8
- 238000012986 modification Methods 0.000 description 8
- 229910002601 GaN Inorganic materials 0.000 description 5
- 229910002704 AlGaN Inorganic materials 0.000 description 3
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 150000001875 compounds Chemical class 0.000 description 2
- 229910052733 gallium Inorganic materials 0.000 description 2
- 229910021480 group 4 element Inorganic materials 0.000 description 2
- 230000031700 light absorption Effects 0.000 description 2
- 230000000737 periodic effect Effects 0.000 description 2
- 239000000758 substrate Substances 0.000 description 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- 229910021476 group 6 element Inorganic materials 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 229910052726 zirconium Inorganic materials 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2018008955 | 2018-01-23 | ||
| JP2018008955 | 2018-01-23 | ||
| PCT/JP2019/001192 WO2019146478A1 (ja) | 2018-01-23 | 2019-01-17 | 半導体レーザおよび電子機器 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2019146478A1 JPWO2019146478A1 (ja) | 2021-01-07 |
| JPWO2019146478A5 true JPWO2019146478A5 (https=) | 2022-01-19 |
| JP7412176B2 JP7412176B2 (ja) | 2024-01-12 |
Family
ID=67395456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2019567021A Active JP7412176B2 (ja) | 2018-01-23 | 2019-01-17 | 半導体レーザおよび電子機器 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US11271368B2 (https=) |
| JP (1) | JP7412176B2 (https=) |
| CN (1) | CN111386638B (https=) |
| DE (1) | DE112019000483T5 (https=) |
| WO (1) | WO2019146478A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2024058791A (ja) * | 2022-10-17 | 2024-04-30 | スタンレー電気株式会社 | 垂直共振器型発光素子 |
| JP2024066235A (ja) * | 2022-11-01 | 2024-05-15 | 株式会社ディスコ | 窒化ガリウム基板の製造方法 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3521186B2 (ja) | 1999-09-01 | 2004-04-19 | 日本電信電話株式会社 | 窒化物半導体光素子及びその製造方法 |
| JP2002217495A (ja) * | 2001-01-16 | 2002-08-02 | Ricoh Co Ltd | 半導体レーザ |
| US6990132B2 (en) | 2003-03-20 | 2006-01-24 | Xerox Corporation | Laser diode with metal-oxide upper cladding layer |
| JP2005150568A (ja) | 2003-11-19 | 2005-06-09 | Sharp Corp | 窒化物半導体発光素子及び光ピックアップ装置 |
| JP4909533B2 (ja) | 2004-06-21 | 2012-04-04 | パナソニック株式会社 | 半導体レーザ素子及びその製造方法 |
| US7279751B2 (en) * | 2004-06-21 | 2007-10-09 | Matsushita Electric Industrial Co., Ltd. | Semiconductor laser device and manufacturing method thereof |
| JP4489750B2 (ja) | 2006-12-06 | 2010-06-23 | 株式会社半導体エネルギー研究所 | シリコン膜の作製方法、半導体装置の作製方法及び光電変換装置の作製方法 |
| JP2009094360A (ja) | 2007-10-10 | 2009-04-30 | Rohm Co Ltd | 半導体レーザダイオード |
| JP5444609B2 (ja) | 2007-11-08 | 2014-03-19 | 日亜化学工業株式会社 | 半導体レーザ素子 |
| US8548023B2 (en) * | 2007-11-08 | 2013-10-01 | Nichia Corporation | Semiconductor laser element |
| US10033154B2 (en) * | 2010-03-03 | 2018-07-24 | Furukawa Electronic Co., Ltd. | Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element |
| JP2013042107A (ja) | 2011-02-17 | 2013-02-28 | Rohm Co Ltd | 半導体レーザ素子 |
| JP2013033930A (ja) * | 2011-06-29 | 2013-02-14 | Sumitomo Electric Ind Ltd | Ｉｉｉ族窒化物半導体素子、及び、ｉｉｉ族窒化物半導体素子の製造方法 |
| CN103477513B (zh) | 2012-04-16 | 2015-09-09 | 松下电器产业株式会社 | 半导体发光元件 |
| US9520695B2 (en) * | 2013-10-18 | 2016-12-13 | Soraa Laser Diode, Inc. | Gallium and nitrogen containing laser device having confinement region |
| JP2016066670A (ja) | 2014-09-24 | 2016-04-28 | ソニー株式会社 | 半導体レーザ |
| WO2017017928A1 (ja) * | 2015-07-30 | 2017-02-02 | パナソニック株式会社 | 窒化物半導体レーザ素子 |
-
2019
- 2019-01-17 WO PCT/JP2019/001192 patent/WO2019146478A1/ja not_active Ceased
- 2019-01-17 DE DE112019000483.2T patent/DE112019000483T5/de not_active Withdrawn
- 2019-01-17 CN CN201980005918.6A patent/CN111386638B/zh active Active
- 2019-01-17 US US16/960,710 patent/US11271368B2/en active Active
- 2019-01-17 JP JP2019567021A patent/JP7412176B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI762930B (zh) | 光電元件 | |
| JP5550078B2 (ja) | 半導体発光素子 | |
| KR102013363B1 (ko) | 발광 소자 및 그것을 제조하는 방법 | |
| JP5963004B2 (ja) | 窒化物半導体発光素子 | |
| US9190557B2 (en) | Ultraviolet semiconductor light-emitting device and fabrication method | |
| KR100631414B1 (ko) | 반도체 발광 다이오드 및 그 제조방법 | |
| US10367118B2 (en) | Light-emitting diode | |
| US8519411B2 (en) | Semiconductor light emitting device | |
| JP6924836B2 (ja) | 光電子半導体チップ | |
| CN111384038B (zh) | 多波长发光二极管磊晶结构 | |
| US20050001226A1 (en) | Light emitting diode and method for manufacturing the same | |
| KR20090115906A (ko) | 그룹 3족 질화물계 반도체 발광다이오드 소자를 위한 표면요철 형성 방법 | |
| US9812608B2 (en) | Deep ultraviolet light-emitting diode chip and package structure containing the same | |
| JP2005268601A (ja) | 化合物半導体発光素子 | |
| JPWO2019146478A5 (https=) | ||
| KR101091048B1 (ko) | 반도체 발광 소자 | |
| KR100735488B1 (ko) | 질화갈륨계 발광다이오드 소자의 제조방법 | |
| JP4998701B2 (ja) | Ｉｉｉ−ｖ族化合物半導体発光ダイオード | |
| JP2011082248A (ja) | 半導体発光素子及びその製造方法、並びにランプ | |
| KR100650996B1 (ko) | 미세 돌기를 형성한 표면부를 포함하는 질화물 반도체 발광 다이오드 및 그의 제조방법 | |
| CN119070136B (zh) | 半导体激光元件及发光装置 | |
| KR101373152B1 (ko) | 반도체 발광 소자 및 그 제조 방법 | |
| CN205645855U (zh) | 紫外线发光元件 | |
| KR101246735B1 (ko) | 모스-아이 구조를 이용한 고효율 반도체소자 및 그 제조방법 | |
| CN120978530A (zh) | 一种半导体激光元件及发光装置 |