JP7412176B2 - 半導体レーザおよび電子機器 - Google Patents

半導体レーザおよび電子機器 Download PDF

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Publication number
JP7412176B2
JP7412176B2 JP2019567021A JP2019567021A JP7412176B2 JP 7412176 B2 JP7412176 B2 JP 7412176B2 JP 2019567021 A JP2019567021 A JP 2019567021A JP 2019567021 A JP2019567021 A JP 2019567021A JP 7412176 B2 JP7412176 B2 JP 7412176B2
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layer
low concentration
concentration impurity
semiconductor laser
cladding layer
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Japanese (ja)
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JPWO2019146478A5 (https=
JPWO2019146478A1 (ja
Inventor
耕太 徳田
秀輝 渡邊
孝行 河角
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2018—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers
    • H01S5/2031—Optical confinement, e.g. absorbing-, reflecting- or waveguide-layers characterized by special waveguide layers, e.g. asymmetric waveguide layers or defined bandgap discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3086—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer
    • H01S5/309—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure doping of the active layer doping of barrier layers that confine charge carriers in the laser structure, e.g. the barriers in a quantum well structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H01S5/3214—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities comprising materials from other groups of the Periodic Table than the materials of the active layer, e.g. ZnSe claddings and GaAs active layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04252—Electrodes, e.g. characterised by the structure characterised by the material
    • H01S5/04253—Electrodes, e.g. characterised by the structure characterised by the material having specific optical properties, e.g. transparent electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2004—Confining in the direction perpendicular to the layer structure
    • H01S5/2009—Confining in the direction perpendicular to the layer structure by using electron barrier layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34333—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser with a well layer based on Ga(In)N or Ga(In)P, e.g. blue laser
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures
    • H01S5/4043—Edge-emitting structures with vertically stacked active layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
    • H01S5/4093—Red, green and blue [RGB] generated directly by laser action or by a combination of laser action with nonlinear frequency conversion

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Geometry (AREA)
  • Semiconductor Lasers (AREA)
JP2019567021A 2018-01-23 2019-01-17 半導体レーザおよび電子機器 Active JP7412176B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2018008955 2018-01-23
JP2018008955 2018-01-23
PCT/JP2019/001192 WO2019146478A1 (ja) 2018-01-23 2019-01-17 半導体レーザおよび電子機器

Publications (3)

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JPWO2019146478A1 JPWO2019146478A1 (ja) 2021-01-07
JPWO2019146478A5 JPWO2019146478A5 (https=) 2022-01-19
JP7412176B2 true JP7412176B2 (ja) 2024-01-12

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US (1) US11271368B2 (https=)
JP (1) JP7412176B2 (https=)
CN (1) CN111386638B (https=)
DE (1) DE112019000483T5 (https=)
WO (1) WO2019146478A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2024058791A (ja) * 2022-10-17 2024-04-30 スタンレー電気株式会社 垂直共振器型発光素子
JP2024066235A (ja) * 2022-11-01 2024-05-15 株式会社ディスコ 窒化ガリウム基板の製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150568A (ja) 2003-11-19 2005-06-09 Sharp Corp 窒化物半導体発光素子及び光ピックアップ装置
WO2013157176A1 (ja) 2012-04-16 2013-10-24 パナソニック株式会社 半導体発光素子
WO2017017928A1 (ja) 2015-07-30 2017-02-02 パナソニック株式会社 窒化物半導体レーザ素子
US20170077677A1 (en) 2013-10-18 2017-03-16 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region

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Publication number Priority date Publication date Assignee Title
JP3521186B2 (ja) 1999-09-01 2004-04-19 日本電信電話株式会社 窒化物半導体光素子及びその製造方法
JP2002217495A (ja) * 2001-01-16 2002-08-02 Ricoh Co Ltd 半導体レーザ
US6990132B2 (en) 2003-03-20 2006-01-24 Xerox Corporation Laser diode with metal-oxide upper cladding layer
JP4909533B2 (ja) 2004-06-21 2012-04-04 パナソニック株式会社 半導体レーザ素子及びその製造方法
US7279751B2 (en) * 2004-06-21 2007-10-09 Matsushita Electric Industrial Co., Ltd. Semiconductor laser device and manufacturing method thereof
JP4489750B2 (ja) 2006-12-06 2010-06-23 株式会社半導体エネルギー研究所 シリコン膜の作製方法、半導体装置の作製方法及び光電変換装置の作製方法
JP2009094360A (ja) 2007-10-10 2009-04-30 Rohm Co Ltd 半導体レーザダイオード
JP5444609B2 (ja) 2007-11-08 2014-03-19 日亜化学工業株式会社 半導体レーザ素子
US8548023B2 (en) * 2007-11-08 2013-10-01 Nichia Corporation Semiconductor laser element
US10033154B2 (en) * 2010-03-03 2018-07-24 Furukawa Electronic Co., Ltd. Semiconductor optical element, semiconductor laser element, and method for manufacturing semiconductor optical element and semiconductor laser element, and method for manufacturing semiconductor laser module and semiconductor element
JP2013042107A (ja) 2011-02-17 2013-02-28 Rohm Co Ltd 半導体レーザ素子
JP2013033930A (ja) * 2011-06-29 2013-02-14 Sumitomo Electric Ind Ltd Ｉｉｉ族窒化物半導体素子、及び、ｉｉｉ族窒化物半導体素子の製造方法
JP2016066670A (ja) 2014-09-24 2016-04-28 ソニー株式会社 半導体レーザ

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005150568A (ja) 2003-11-19 2005-06-09 Sharp Corp 窒化物半導体発光素子及び光ピックアップ装置
WO2013157176A1 (ja) 2012-04-16 2013-10-24 パナソニック株式会社 半導体発光素子
US20170077677A1 (en) 2013-10-18 2017-03-16 Soraa Laser Diode, Inc. Gallium and nitrogen containing laser device having confinement region
WO2017017928A1 (ja) 2015-07-30 2017-02-02 パナソニック株式会社 窒化物半導体レーザ素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
A. Pourhashemi et al.，"High-power blue laser diodes with indium tin oxide cladding on semipolar (20-2-1) GaN substrates"，APPLIED PHYSICS LETTERS，2015年，Vol.106，pp.111105-1 - 111105-4

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Publication number Publication date
CN111386638B (zh) 2024-05-14
WO2019146478A1 (ja) 2019-08-01
DE112019000483T5 (de) 2020-10-29
CN111386638A (zh) 2020-07-07
JPWO2019146478A1 (ja) 2021-01-07
US11271368B2 (en) 2022-03-08
US20210066887A1 (en) 2021-03-04

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