JPWO2022131273A1 - - Google Patents

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Publication number
JPWO2022131273A1
JPWO2022131273A1 JP2022570023A JP2022570023A JPWO2022131273A1 JP WO2022131273 A1 JPWO2022131273 A1 JP WO2022131273A1 JP 2022570023 A JP2022570023 A JP 2022570023A JP 2022570023 A JP2022570023 A JP 2022570023A JP WO2022131273 A1 JPWO2022131273 A1 JP WO2022131273A1
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JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022570023A
Other languages
Japanese (ja)
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JP7790836B2 (ja
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Publication of JPWO2022131273A1 publication Critical patent/JPWO2022131273A1/ja
Priority to JP2024205375A priority Critical patent/JP2025027018A/ja
Application granted granted Critical
Publication of JP7790836B2 publication Critical patent/JP7790836B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H10W74/127—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed characterised by arrangements for sealing or adhesion
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/581—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B35/00—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products
    • C04B35/515—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics
    • C04B35/58—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides
    • C04B35/584—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on non-oxide ceramics based on borides, nitrides, i.e. nitrides, oxynitrides, carbonitrides or oxycarbonitrides or silicides based on silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/02—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles
    • C04B37/023—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used
    • C04B37/026—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with metallic articles characterised by the interlayer used consisting of metals or metal salts
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/53—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone involving the removal of at least part of the materials of the treated article, e.g. etching, drying of hardened concrete
    • C04B41/5338—Etching
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/91—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics involving the removal of part of the materials of the treated articles, e.g. etching
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0017—Etching of the substrate by chemical or physical means
    • H05K3/0026—Etching of the substrate by chemical or physical means by laser ablation
    • H05K3/0029—Etching of the substrate by chemical or physical means by laser ablation of inorganic insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/0011—Working of insulating substrates or insulating layers
    • H05K3/0044—Mechanical working of the substrate, e.g. drilling or punching
    • H05K3/0052—Depaneling, i.e. dividing a panel into circuit boards; Working of the edges of circuit boards
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/68—Shapes or dispositions thereof
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00—Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/60—Insulating or insulated package substrates; Interposers; Redistribution layers
    • H10W70/67—Insulating or insulated package substrates; Interposers; Redistribution layers characterised by their insulating layers or insulating parts
    • H10W70/69—Insulating materials thereof
    • H10W70/692—Ceramics or glasses
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K1/00—Printed circuits
    • H05K1/02—Details
    • H05K1/03—Use of materials for the substrate
    • H05K1/0306—Inorganic insulating substrates, e.g. ceramic, glass
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K2201/00—Indexing scheme relating to printed circuits covered by H05K1/00
    • H05K2201/09—Shape and layout
    • H05K2201/09009—Substrate related
    • H05K2201/0909—Preformed cutting or breaking line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W40/00—Arrangements for thermal protection or thermal control
    • H10W40/20—Arrangements for cooling
    • H10W40/25—Arrangements for cooling characterised by their materials
    • H10W40/255—Arrangements for cooling characterised by their materials having a laminate or multilayered structure, e.g. direct bond copper [DBC] ceramic substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W42/00—Arrangements for protection of devices
    • H10W42/121—Arrangements for protection of devices protecting against mechanical damage

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • Materials Engineering (AREA)
  • Structural Engineering (AREA)
  • Organic Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Inorganic Chemistry (AREA)
  • Structure Of Printed Boards (AREA)
  • Laser Beam Processing (AREA)
  • Manufacturing Of Printed Wiring (AREA)
JP2022570023A 2020-12-16 2021-12-14 セラミックススクライブ基板、セラミックス基板、セラミックススクライブ基板の製造方法、セラミックス基板の製造方法、セラミックス回路基板の製造方法、及び、半導体素子の製造方法 Active JP7790836B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024205375A JP2025027018A (ja) 2020-12-16 2024-11-26 セラミックススクライブ基板、セラミックス基板、セラミックススクライブ基板の製造方法、セラミックス基板の製造方法、セラミックス回路基板の製造方法、及び、半導体素子の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020208106 2020-12-16
JP2020208106 2020-12-16
PCT/JP2021/046148 WO2022131273A1 (ja) 2020-12-16 2021-12-14 セラミックススクライブ基板、セラミックス基板、セラミックススクライブ基板の製造方法、セラミックス基板の製造方法、セラミックス回路基板の製造方法、及び、半導体素子の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024205375A Division JP2025027018A (ja) 2020-12-16 2024-11-26 セラミックススクライブ基板、セラミックス基板、セラミックススクライブ基板の製造方法、セラミックス基板の製造方法、セラミックス回路基板の製造方法、及び、半導体素子の製造方法

Publications (2)

Publication Number Publication Date
JPWO2022131273A1 true JPWO2022131273A1 (https=) 2022-06-23
JP7790836B2 JP7790836B2 (ja) 2025-12-23

Family

ID=82057833

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022570023A Active JP7790836B2 (ja) 2020-12-16 2021-12-14 セラミックススクライブ基板、セラミックス基板、セラミックススクライブ基板の製造方法、セラミックス基板の製造方法、セラミックス回路基板の製造方法、及び、半導体素子の製造方法
JP2024205375A Pending JP2025027018A (ja) 2020-12-16 2024-11-26 セラミックススクライブ基板、セラミックス基板、セラミックススクライブ基板の製造方法、セラミックス基板の製造方法、セラミックス回路基板の製造方法、及び、半導体素子の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024205375A Pending JP2025027018A (ja) 2020-12-16 2024-11-26 セラミックススクライブ基板、セラミックス基板、セラミックススクライブ基板の製造方法、セラミックス基板の製造方法、セラミックス回路基板の製造方法、及び、半導体素子の製造方法

Country Status (5)

Country Link
US (1) US20230326818A1 (https=)
EP (1) EP4266835B1 (https=)
JP (2) JP7790836B2 (https=)
CN (1) CN116601761A (https=)
WO (1) WO2022131273A1 (https=)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP4266835B1 (en) * 2020-12-16 2026-04-29 Niterra Materials Co., Ltd. Ceramic scribe substrate, method for manufacturing ceramic scribe substrate, method for manufacturing ceramic substrate, method for manufacturing ceramic circuit board, and method for manufacturing semiconductor elements
US20230307314A1 (en) * 2022-03-24 2023-09-28 Texas Instruments Incorporated Direct bond copper substrate with metal filled ceramic substrate indentations

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62174364U (https=) * 1986-04-25 1987-11-05
JP2001267458A (ja) * 2000-03-22 2001-09-28 New Japan Radio Co Ltd セラミック集合基板、これを用いた半導体装置及びその製造方法
JP2002076532A (ja) * 2000-08-28 2002-03-15 Kyocera Corp セラミック回路基板
JP2006036602A (ja) * 2004-07-28 2006-02-09 Kyocera Corp セラミック部材およびその製造方法、ならびにこれを用いた電子部品
WO2009154295A1 (ja) * 2008-06-20 2009-12-23 日立金属株式会社 セラミックス集合基板とその製造方法及びセラミックス基板並びにセラミックス回路基板
JP2011071374A (ja) * 2009-09-28 2011-04-07 Kyocera Corp 多数個取り配線基板およびその製造方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4755754B2 (ja) 2000-12-06 2011-08-24 株式会社東芝 窒化珪素基板およびそれを用いた窒化珪素回路基板並びにその製造方法
CN101849445B (zh) * 2007-11-06 2012-11-21 三菱综合材料株式会社 陶瓷基板、陶瓷基板的制造方法和电源模块用基板的制造方法
JP6642146B2 (ja) * 2015-03-31 2020-02-05 日立金属株式会社 窒化珪素系セラミックス集合基板及びその製造方法
JP6399252B2 (ja) 2016-03-28 2018-10-03 日立金属株式会社 回路基板および窒化ケイ素焼結基板の製造方法
JP7741725B2 (ja) * 2019-03-01 2025-09-18 デンカ株式会社 セラミックグリーンシート、セラミック基板、セラミックグリーンシートの製造方法およびセラミック基板の製造方法
JP7606449B2 (ja) * 2019-03-15 2024-12-25 デンカ株式会社 窒化ケイ素基板の製造方法及び窒化ケイ素基材
CN113597674B (zh) 2019-04-11 2025-01-17 株式会社东芝 陶瓷铜电路基板及使用了其的半导体装置
EP4266835B1 (en) * 2020-12-16 2026-04-29 Niterra Materials Co., Ltd. Ceramic scribe substrate, method for manufacturing ceramic scribe substrate, method for manufacturing ceramic substrate, method for manufacturing ceramic circuit board, and method for manufacturing semiconductor elements

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62174364U (https=) * 1986-04-25 1987-11-05
JP2001267458A (ja) * 2000-03-22 2001-09-28 New Japan Radio Co Ltd セラミック集合基板、これを用いた半導体装置及びその製造方法
JP2002076532A (ja) * 2000-08-28 2002-03-15 Kyocera Corp セラミック回路基板
JP2006036602A (ja) * 2004-07-28 2006-02-09 Kyocera Corp セラミック部材およびその製造方法、ならびにこれを用いた電子部品
WO2009154295A1 (ja) * 2008-06-20 2009-12-23 日立金属株式会社 セラミックス集合基板とその製造方法及びセラミックス基板並びにセラミックス回路基板
JP2011071374A (ja) * 2009-09-28 2011-04-07 Kyocera Corp 多数個取り配線基板およびその製造方法

Also Published As

Publication number Publication date
CN116601761A (zh) 2023-08-15
JP2025027018A (ja) 2025-02-26
US20230326818A1 (en) 2023-10-12
JP7790836B2 (ja) 2025-12-23
EP4266835A4 (en) 2024-12-04
EP4266835B1 (en) 2026-04-29
EP4266835A1 (en) 2023-10-25
WO2022131273A1 (ja) 2022-06-23

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