JPWO2022125820A5 - - Google Patents
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- Publication number
- JPWO2022125820A5 JPWO2022125820A5 JP2023533612A JP2023533612A JPWO2022125820A5 JP WO2022125820 A5 JPWO2022125820 A5 JP WO2022125820A5 JP 2023533612 A JP2023533612 A JP 2023533612A JP 2023533612 A JP2023533612 A JP 2023533612A JP WO2022125820 A5 JPWO2022125820 A5 JP WO2022125820A5
- Authority
- JP
- Japan
- Prior art keywords
- tin
- thin film
- flow rate
- precursor
- ratio
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000002243 precursor Substances 0.000 claims description 30
- 230000008021 deposition Effects 0.000 claims description 7
- 239000000758 substrate Substances 0.000 claims description 5
- 238000000034 method Methods 0.000 claims 30
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 26
- 239000010409 thin film Substances 0.000 claims 18
- 239000010936 titanium Substances 0.000 claims 17
- 238000002441 X-ray diffraction Methods 0.000 claims 8
- 239000013078 crystal Substances 0.000 claims 8
- 230000007423 decrease Effects 0.000 claims 4
- 239000004065 semiconductor Substances 0.000 claims 4
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 claims 2
- 238000002083 X-ray spectrum Methods 0.000 claims 2
- 229910052801 chlorine Inorganic materials 0.000 claims 2
- 239000000460 chlorine Substances 0.000 claims 2
- 125000004122 cyclic group Chemical group 0.000 claims 2
- 238000005137 deposition process Methods 0.000 claims 2
- 230000000737 periodic effect Effects 0.000 claims 2
- 230000003247 decreasing effect Effects 0.000 claims 1
- 239000011261 inert gas Substances 0.000 description 2
- 239000000376 reactant Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US202063123733P | 2020-12-10 | 2020-12-10 | |
| US63/123,733 | 2020-12-10 | ||
| PCT/US2021/062679 WO2022125820A1 (en) | 2020-12-10 | 2021-12-09 | Conformal and smooth titanium nitride layers and methods of forming the same |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2023552983A JP2023552983A (ja) | 2023-12-20 |
| JPWO2022125820A5 true JPWO2022125820A5 (https=) | 2024-12-02 |
| JP2023552983A5 JP2023552983A5 (https=) | 2024-12-02 |
Family
ID=81974835
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2023533612A Pending JP2023552983A (ja) | 2020-12-10 | 2021-12-09 | コンフォーマルかつ平滑な窒化チタン層及びその形成方法 |
Country Status (6)
| Country | Link |
|---|---|
| EP (1) | EP4259845A4 (https=) |
| JP (1) | JP2023552983A (https=) |
| KR (1) | KR20230125798A (https=) |
| CN (1) | CN116745461A (https=) |
| TW (1) | TW202240006A (https=) |
| WO (1) | WO2022125820A1 (https=) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US12272599B2 (en) | 2019-10-08 | 2025-04-08 | Eugenus, Inc. | Conformal and smooth titanium nitride layers and methods of forming the same |
| US12283486B2 (en) | 2019-10-08 | 2025-04-22 | Eugenus, Inc. | Conformal and smooth titanium nitride layers and methods of forming the same |
| US11482413B2 (en) | 2019-10-08 | 2022-10-25 | Eugenus, Inc. | Conformal and smooth titanium nitride layers and methods of forming the same |
Family Cites Families (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100439028B1 (ko) * | 2001-12-27 | 2004-07-03 | 삼성전자주식회사 | 2단계 증착방식을 이용한 반도체 장치의 제조방법 |
| US20040013803A1 (en) * | 2002-07-16 | 2004-01-22 | Applied Materials, Inc. | Formation of titanium nitride films using a cyclical deposition process |
| US6943097B2 (en) * | 2003-08-19 | 2005-09-13 | International Business Machines Corporation | Atomic layer deposition of metallic contacts, gates and diffusion barriers |
| US20060128127A1 (en) * | 2004-12-13 | 2006-06-15 | Jung-Hun Seo | Method of depositing a metal compound layer and apparatus for depositing a metal compound layer |
| US20080305561A1 (en) * | 2007-06-07 | 2008-12-11 | Shrinivas Govindarajan | Methods of controlling film deposition using atomic layer deposition |
| JP5087657B2 (ja) * | 2009-08-04 | 2012-12-05 | 株式会社日立国際電気 | 半導体装置の製造方法及び基板処理装置 |
| US8728956B2 (en) * | 2010-04-15 | 2014-05-20 | Novellus Systems, Inc. | Plasma activated conformal film deposition |
| JP2013133521A (ja) * | 2011-12-27 | 2013-07-08 | Tokyo Electron Ltd | 成膜方法 |
| JP6416031B2 (ja) * | 2015-03-30 | 2018-10-31 | 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ | 半導体デバイスの製造方法、基板処理装置およびプログラム |
| KR102065243B1 (ko) * | 2017-05-01 | 2020-01-10 | 도쿄엘렉트론가부시키가이샤 | 성막 방법 및 성막 장치 |
| KR102646467B1 (ko) * | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조 |
-
2021
- 2021-12-09 KR KR1020237022834A patent/KR20230125798A/ko active Pending
- 2021-12-09 WO PCT/US2021/062679 patent/WO2022125820A1/en not_active Ceased
- 2021-12-09 EP EP21904428.6A patent/EP4259845A4/en active Pending
- 2021-12-09 JP JP2023533612A patent/JP2023552983A/ja active Pending
- 2021-12-09 CN CN202180083129.1A patent/CN116745461A/zh active Pending
- 2021-12-10 TW TW110146342A patent/TW202240006A/zh unknown
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