EP4259845A4 - CONFORMAL AND SMOOTH TITANIUM NITRIDE LAYERS AND METHODS FOR THEIR PRODUCTION - Google Patents

CONFORMAL AND SMOOTH TITANIUM NITRIDE LAYERS AND METHODS FOR THEIR PRODUCTION Download PDF

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Publication number
EP4259845A4
EP4259845A4 EP21904428.6A EP21904428A EP4259845A4 EP 4259845 A4 EP4259845 A4 EP 4259845A4 EP 21904428 A EP21904428 A EP 21904428A EP 4259845 A4 EP4259845 A4 EP 4259845A4
Authority
EP
European Patent Office
Prior art keywords
conformal
methods
forming
same
titanium nitride
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
EP21904428.6A
Other languages
German (de)
English (en)
French (fr)
Other versions
EP4259845A1 (en
Inventor
Hyunchol Cho
Hae Young Kim
Ajit Dhamdhere
Bunsen B. Nie
Sung-Hoon Jung
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Eugenus Inc
Original Assignee
Eugenus Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Eugenus Inc filed Critical Eugenus Inc
Publication of EP4259845A1 publication Critical patent/EP4259845A1/en
Publication of EP4259845A4 publication Critical patent/EP4259845A4/en
Pending legal-status Critical Current

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/34—Nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/04—Coating on selected surface areas, e.g. using masks
    • C23C16/045—Coating cavities or hollow spaces, e.g. interior of tubes; Infiltration of porous substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45553—Atomic layer deposition [ALD] characterized by the use of precursors specially adapted for ALD
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45557—Pulsed pressure or control pressure
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/01—Manufacture or treatment
    • H10D64/013—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator
    • H10D64/01302—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon
    • H10D64/01304—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor
    • H10D64/01318—Manufacture or treatment of electrodes having a conductor capacitively coupled to a semiconductor by an insulator the insulator being formed after the semiconductor body, the semiconductor being silicon characterised by the conductor the conductor comprising a layer of alloy material, compound material or organic material contacting the insulator, e.g. TiN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/40—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials
    • H10P14/42—Formation of materials, e.g. in the shape of layers or pillars of conductive or resistive materials using a gas or vapour
    • H10P14/43—Chemical deposition, e.g. chemical vapour deposition [CVD]
    • H10P14/432—Chemical deposition, e.g. chemical vapour deposition [CVD] using selective deposition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/031—Manufacture or treatment of conductive parts of the interconnections
    • H10W20/032—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers
    • H10W20/033—Manufacture or treatment of conductive parts of the interconnections of conductive barrier, adhesion or liner layers in openings in dielectrics

Landscapes

  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Composite Materials (AREA)
EP21904428.6A 2020-12-10 2021-12-09 CONFORMAL AND SMOOTH TITANIUM NITRIDE LAYERS AND METHODS FOR THEIR PRODUCTION Pending EP4259845A4 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US202063123733P 2020-12-10 2020-12-10
PCT/US2021/062679 WO2022125820A1 (en) 2020-12-10 2021-12-09 Conformal and smooth titanium nitride layers and methods of forming the same

Publications (2)

Publication Number Publication Date
EP4259845A1 EP4259845A1 (en) 2023-10-18
EP4259845A4 true EP4259845A4 (en) 2024-07-24

Family

ID=81974835

Family Applications (1)

Application Number Title Priority Date Filing Date
EP21904428.6A Pending EP4259845A4 (en) 2020-12-10 2021-12-09 CONFORMAL AND SMOOTH TITANIUM NITRIDE LAYERS AND METHODS FOR THEIR PRODUCTION

Country Status (6)

Country Link
EP (1) EP4259845A4 (https=)
JP (1) JP2023552983A (https=)
KR (1) KR20230125798A (https=)
CN (1) CN116745461A (https=)
TW (1) TW202240006A (https=)
WO (1) WO2022125820A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12272599B2 (en) 2019-10-08 2025-04-08 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
US12283486B2 (en) 2019-10-08 2025-04-22 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
US11482413B2 (en) 2019-10-08 2022-10-25 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030124798A1 (en) * 2001-12-27 2003-07-03 Hyun-Seok Lim Method of manufacturing a semiconductor device using a two-step deposition process
US20060128127A1 (en) * 2004-12-13 2006-06-15 Jung-Hun Seo Method of depositing a metal compound layer and apparatus for depositing a metal compound layer
US20130164936A1 (en) * 2011-12-27 2013-06-27 Tokyo Electron Limited Film deposition method
US20180311700A1 (en) * 2017-05-01 2018-11-01 Tokyo Electron Limited Film forming method and film forming apparatus
US20190304790A1 (en) * 2018-03-27 2019-10-03 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040013803A1 (en) * 2002-07-16 2004-01-22 Applied Materials, Inc. Formation of titanium nitride films using a cyclical deposition process
US6943097B2 (en) * 2003-08-19 2005-09-13 International Business Machines Corporation Atomic layer deposition of metallic contacts, gates and diffusion barriers
US20080305561A1 (en) * 2007-06-07 2008-12-11 Shrinivas Govindarajan Methods of controlling film deposition using atomic layer deposition
JP5087657B2 (ja) * 2009-08-04 2012-12-05 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
US8728956B2 (en) * 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
JP6416031B2 (ja) * 2015-03-30 2018-10-31 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体デバイスの製造方法、基板処理装置およびプログラム

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20030124798A1 (en) * 2001-12-27 2003-07-03 Hyun-Seok Lim Method of manufacturing a semiconductor device using a two-step deposition process
US20060128127A1 (en) * 2004-12-13 2006-06-15 Jung-Hun Seo Method of depositing a metal compound layer and apparatus for depositing a metal compound layer
US20130164936A1 (en) * 2011-12-27 2013-06-27 Tokyo Electron Limited Film deposition method
US20180311700A1 (en) * 2017-05-01 2018-11-01 Tokyo Electron Limited Film forming method and film forming apparatus
US20190304790A1 (en) * 2018-03-27 2019-10-03 Asm Ip Holding B.V. Method of forming an electrode on a substrate and a semiconductor device structure including an electrode

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
DATABASE INSPEC [online] THE INSTITUTION OF ELECTRICAL ENGINEERS, STEVENAGE, GB; September 1992 (1992-09-01), BUITING M J ET AL: "Relationship between the process parameters and film properties of `low temperature' low pressure chemical vapor deposition titanium nitride films", XP002811449, Database accession no. 4262002 *
JOURNAL OF THE ELECTROCHEMICAL SOCIETY USA, vol. 139, no. 9, September 1992 (1992-09-01), pages 2580 - 2584, XP002811734, ISSN: 0013-4651 *
K JUN: "Effect of Partial Pressure of TiCl4 and NH3 on Chemical Vapor Deposition Titanium Nitride (CVD-TiN) Film Cl Content and Electrical Resistivity", JAPANESE JOURNAL OF APPLIED PHYSICS, 15 April 2004 (2004-04-15), pages L519 - 521, XP093154884, Retrieved from the Internet <URL:https://iopscience.iop.org/article/10.1143/JJAP.43.L519/pdf> DOI: 10.1143/JJAP.43.L519 *
See also references of WO2022125820A1 *

Also Published As

Publication number Publication date
JP2023552983A (ja) 2023-12-20
CN116745461A (zh) 2023-09-12
WO2022125820A1 (en) 2022-06-16
KR20230125798A (ko) 2023-08-29
EP4259845A1 (en) 2023-10-18
TW202240006A (zh) 2022-10-16

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RIN1 Information on inventor provided before grant (corrected)

Inventor name: JUNG, SUNG-HOON

Inventor name: DHAMDHERE, AJIT

Inventor name: KIM, HAE YOUNG

Inventor name: CHO, HYUNCHOL

Inventor name: NIE, BUNSEN B.

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RIC1 Information provided on ipc code assigned before grant

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