JP2023552983A5 - - Google Patents

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Publication number
JP2023552983A5
JP2023552983A5 JP2023533612A JP2023533612A JP2023552983A5 JP 2023552983 A5 JP2023552983 A5 JP 2023552983A5 JP 2023533612 A JP2023533612 A JP 2023533612A JP 2023533612 A JP2023533612 A JP 2023533612A JP 2023552983 A5 JP2023552983 A5 JP 2023552983A5
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JP
Japan
Application number
JP2023533612A
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Japanese (ja)
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JP2023552983A (ja
JPWO2022125820A5 (https=
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Publication date
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Priority claimed from PCT/US2021/062679 external-priority patent/WO2022125820A1/en
Publication of JP2023552983A publication Critical patent/JP2023552983A/ja
Publication of JPWO2022125820A5 publication Critical patent/JPWO2022125820A5/ja
Publication of JP2023552983A5 publication Critical patent/JP2023552983A5/ja
Pending legal-status Critical Current

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JP2023533612A 2020-12-10 2021-12-09 コンフォーマルかつ平滑な窒化チタン層及びその形成方法 Pending JP2023552983A (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US202063123733P 2020-12-10 2020-12-10
US63/123,733 2020-12-10
PCT/US2021/062679 WO2022125820A1 (en) 2020-12-10 2021-12-09 Conformal and smooth titanium nitride layers and methods of forming the same

Publications (3)

Publication Number Publication Date
JP2023552983A JP2023552983A (ja) 2023-12-20
JPWO2022125820A5 JPWO2022125820A5 (https=) 2024-12-02
JP2023552983A5 true JP2023552983A5 (https=) 2024-12-02

Family

ID=81974835

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2023533612A Pending JP2023552983A (ja) 2020-12-10 2021-12-09 コンフォーマルかつ平滑な窒化チタン層及びその形成方法

Country Status (6)

Country Link
EP (1) EP4259845A4 (https=)
JP (1) JP2023552983A (https=)
KR (1) KR20230125798A (https=)
CN (1) CN116745461A (https=)
TW (1) TW202240006A (https=)
WO (1) WO2022125820A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12272599B2 (en) 2019-10-08 2025-04-08 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
US12283486B2 (en) 2019-10-08 2025-04-22 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same
US11482413B2 (en) 2019-10-08 2022-10-25 Eugenus, Inc. Conformal and smooth titanium nitride layers and methods of forming the same

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100439028B1 (ko) * 2001-12-27 2004-07-03 삼성전자주식회사 2단계 증착방식을 이용한 반도체 장치의 제조방법
US20040013803A1 (en) * 2002-07-16 2004-01-22 Applied Materials, Inc. Formation of titanium nitride films using a cyclical deposition process
US6943097B2 (en) * 2003-08-19 2005-09-13 International Business Machines Corporation Atomic layer deposition of metallic contacts, gates and diffusion barriers
US20060128127A1 (en) * 2004-12-13 2006-06-15 Jung-Hun Seo Method of depositing a metal compound layer and apparatus for depositing a metal compound layer
US20080305561A1 (en) * 2007-06-07 2008-12-11 Shrinivas Govindarajan Methods of controlling film deposition using atomic layer deposition
JP5087657B2 (ja) * 2009-08-04 2012-12-05 株式会社日立国際電気 半導体装置の製造方法及び基板処理装置
US8728956B2 (en) * 2010-04-15 2014-05-20 Novellus Systems, Inc. Plasma activated conformal film deposition
JP2013133521A (ja) * 2011-12-27 2013-07-08 Tokyo Electron Ltd 成膜方法
JP6416031B2 (ja) * 2015-03-30 2018-10-31 株式会社Kokusai Electric 半導体デバイスの製造方法、基板処理装置およびプログラム
KR102065243B1 (ko) * 2017-05-01 2020-01-10 도쿄엘렉트론가부시키가이샤 성막 방법 및 성막 장치
KR102646467B1 (ko) * 2018-03-27 2024-03-11 에이에스엠 아이피 홀딩 비.브이. 기판 상에 전극을 형성하는 방법 및 전극을 포함하는 반도체 소자 구조

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