JPWO2021210432A1 - - Google Patents

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Publication number
JPWO2021210432A1
JPWO2021210432A1 JP2022515311A JP2022515311A JPWO2021210432A1 JP WO2021210432 A1 JPWO2021210432 A1 JP WO2021210432A1 JP 2022515311 A JP2022515311 A JP 2022515311A JP 2022515311 A JP2022515311 A JP 2022515311A JP WO2021210432 A1 JPWO2021210432 A1 JP WO2021210432A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2022515311A
Other versions
JP7283709B2 (ja
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021210432A1 publication Critical patent/JPWO2021210432A1/ja
Priority to JP2023077419A priority Critical patent/JP2023106455A/ja
Application granted granted Critical
Publication of JP7283709B2 publication Critical patent/JP7283709B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
    • G03F1/62—Pellicles, e.g. pellicle assemblies, e.g. having membrane on support frame; Preparation thereof
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/168—After-treatment
    • C01B32/17—Purification
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70983—Optical system protection, e.g. pellicles or removable covers for protection of mask

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Nanotechnology (AREA)
  • Materials Engineering (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Manufacturing & Machinery (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Preparing Plates And Mask In Photomechanical Process (AREA)
  • Carbon And Carbon Compounds (AREA)
JP2022515311A 2020-04-17 2021-04-02 露光用ペリクル膜、ペリクル、露光原版、露光装置及び露光用ペリクル膜の製造方法 Active JP7283709B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2023077419A JP2023106455A (ja) 2020-04-17 2023-05-09 露光用ペリクル膜、ペリクル、露光原版、露光装置及び露光用ペリクル膜の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020074343 2020-04-17
JP2020074343 2020-04-17
PCT/JP2021/014353 WO2021210432A1 (ja) 2020-04-17 2021-04-02 露光用ペリクル膜、ペリクル、露光原版、露光装置及び露光用ペリクル膜の製造方法

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2023077419A Division JP2023106455A (ja) 2020-04-17 2023-05-09 露光用ペリクル膜、ペリクル、露光原版、露光装置及び露光用ペリクル膜の製造方法

Publications (2)

Publication Number Publication Date
JPWO2021210432A1 true JPWO2021210432A1 (ja) 2021-10-21
JP7283709B2 JP7283709B2 (ja) 2023-05-30

Family

ID=78083806

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2022515311A Active JP7283709B2 (ja) 2020-04-17 2021-04-02 露光用ペリクル膜、ペリクル、露光原版、露光装置及び露光用ペリクル膜の製造方法
JP2023077419A Pending JP2023106455A (ja) 2020-04-17 2023-05-09 露光用ペリクル膜、ペリクル、露光原版、露光装置及び露光用ペリクル膜の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2023077419A Pending JP2023106455A (ja) 2020-04-17 2023-05-09 露光用ペリクル膜、ペリクル、露光原版、露光装置及び露光用ペリクル膜の製造方法

Country Status (7)

Country Link
US (1) US20230194977A1 (ja)
EP (1) EP4120017A4 (ja)
JP (2) JP7283709B2 (ja)
KR (1) KR20220154184A (ja)
CN (3) CN117270313A (ja)
TW (1) TW202140378A (ja)
WO (1) WO2021210432A1 (ja)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080152873A1 (en) * 2006-12-26 2008-06-26 Advanced Micro Devices, Inc. EUV pellicle and method for fabricating semiconductor dies using same
WO2018008594A1 (ja) * 2016-07-05 2018-01-11 三井化学株式会社 ペリクル膜、ペリクル枠体、ペリクル、その製造方法、露光原版、露光装置、半導体装置の製造方法
JP2018194840A (ja) * 2017-05-15 2018-12-06 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ カーボンナノチューブペリクル膜の形成方法
JP2018194838A (ja) * 2017-05-15 2018-12-06 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ ペリクルを形成する方法
JP2019168502A (ja) * 2018-03-22 2019-10-03 三井化学株式会社 カーボンナノチューブ自立膜の製造方法、およびペリクルの製造方法

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101417257A (zh) * 2007-10-26 2009-04-29 中国科学院沈阳自动化研究所 单壁碳纳米管与多壁碳纳米管分离方法
KR101082093B1 (ko) * 2007-12-21 2011-11-10 주식회사 하이닉스반도체 포토마스크의 제조방법
KR101219761B1 (ko) * 2009-01-09 2013-01-10 세종대학교산학협력단 탄소나노튜브의 정제 방법 및 분산 방법
JP5521348B2 (ja) * 2009-02-17 2014-06-11 東レ株式会社 透明導電積層体
JP6741600B2 (ja) * 2014-07-04 2020-08-19 エーエスエムエル ネザーランズ ビー．ブイ． リソグラフィ装置内で用いられる膜及びそのような膜を含むリソグラフィ装置
KR102345543B1 (ko) * 2015-08-03 2021-12-30 삼성전자주식회사 펠리클 및 이를 포함하는 포토마스크 조립체
WO2017179199A1 (ja) * 2016-04-15 2017-10-19 凸版印刷株式会社 ペリクル
TW201738650A (zh) * 2016-04-20 2017-11-01 Toppan Printing Co Ltd 防護膜組件
JP6817477B2 (ja) 2020-02-10 2021-01-20 ヒロセ電機株式会社 回路基板用電気コネクタ

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080152873A1 (en) * 2006-12-26 2008-06-26 Advanced Micro Devices, Inc. EUV pellicle and method for fabricating semiconductor dies using same
WO2018008594A1 (ja) * 2016-07-05 2018-01-11 三井化学株式会社 ペリクル膜、ペリクル枠体、ペリクル、その製造方法、露光原版、露光装置、半導体装置の製造方法
JP2018194840A (ja) * 2017-05-15 2018-12-06 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ カーボンナノチューブペリクル膜の形成方法
JP2018194838A (ja) * 2017-05-15 2018-12-06 アイメック・ヴェーゼットウェーＩｍｅｃ Ｖｚｗ ペリクルを形成する方法
JP2019168502A (ja) * 2018-03-22 2019-10-03 三井化学株式会社 カーボンナノチューブ自立膜の製造方法、およびペリクルの製造方法

Also Published As

Publication number Publication date
EP4120017A1 (en) 2023-01-18
JP7283709B2 (ja) 2023-05-30
EP4120017A4 (en) 2023-11-01
JP2023106455A (ja) 2023-08-01
WO2021210432A1 (ja) 2021-10-21
CN115398334B (zh) 2023-09-26
US20230194977A1 (en) 2023-06-22
CN117270313A (zh) 2023-12-22
TW202140378A (zh) 2021-11-01
CN117270314A (zh) 2023-12-22
CN115398334A (zh) 2022-11-25
KR20220154184A (ko) 2022-11-21

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