JPWO2021161675A1 - - Google Patents
Info
- Publication number
- JPWO2021161675A1 JPWO2021161675A1 JP2021530257A JP2021530257A JPWO2021161675A1 JP WO2021161675 A1 JPWO2021161675 A1 JP WO2021161675A1 JP 2021530257 A JP2021530257 A JP 2021530257A JP 2021530257 A JP2021530257 A JP 2021530257A JP WO2021161675 A1 JPWO2021161675 A1 JP WO2021161675A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
- G01J5/24—Use of specially adapted circuits, e.g. bridge circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J5/22—Electrical features thereof
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01K—MEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
- G01K7/00—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
- G01K7/01—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
- G01K7/015—Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/02016—Circuit arrangements of general character for the devices
- H01L31/02019—Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/02024—Position sensitive and lateral effect photodetectors; Quadrant photodiodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/42—Photometry, e.g. photographic exposure meter using electric radiation detectors
- G01J1/44—Electric circuits
- G01J2001/4446—Type of detector
- G01J2001/446—Photodiode
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J2005/0077—Imaging
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J5/00—Radiation pyrometry, e.g. infrared or optical thermometry
- G01J5/10—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
- G01J5/20—Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
- G01J2005/202—Arrays
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2020020770 | 2020-02-10 | ||
JP2020020770 | 2020-02-10 | ||
PCT/JP2020/048675 WO2021161675A1 (ja) | 2020-02-10 | 2020-12-25 | 赤外線検出素子 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021161675A1 true JPWO2021161675A1 (ja) | 2021-08-19 |
JP7120463B2 JP7120463B2 (ja) | 2022-08-17 |
Family
ID=77292361
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021530257A Active JP7120463B2 (ja) | 2020-02-10 | 2020-12-25 | 赤外線検出素子 |
Country Status (5)
Country | Link |
---|---|
US (1) | US11971306B2 (ja) |
EP (1) | EP4105617A4 (ja) |
JP (1) | JP7120463B2 (ja) |
CN (1) | CN115053113A (ja) |
WO (1) | WO2021161675A1 (ja) |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002328732A (ja) * | 2001-05-07 | 2002-11-15 | Texas Instr Japan Ltd | 基準電圧発生回路 |
JP2007225398A (ja) * | 2006-02-22 | 2007-09-06 | Mitsubishi Electric Corp | 熱型赤外線検出器および熱型赤外線センサ |
JP2008258973A (ja) * | 2007-04-05 | 2008-10-23 | Mitsubishi Electric Corp | 熱型赤外線固体撮像素子及び赤外線カメラ |
JP2016535470A (ja) * | 2013-09-26 | 2016-11-10 | ヴァリアン メディカル システムズ インコーポレイテッド | 撮像素子のための画素アーキテクチャ |
WO2018235817A1 (ja) * | 2017-06-23 | 2018-12-27 | パイオニア株式会社 | 電磁波検出装置 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH0949762A (ja) * | 1995-08-09 | 1997-02-18 | Mitsubishi Electric Corp | 光量電圧変換回路 |
US6028309A (en) * | 1997-02-11 | 2000-02-22 | Indigo Systems Corporation | Methods and circuitry for correcting temperature-induced errors in microbolometer focal plane array |
JP3866069B2 (ja) * | 2001-09-26 | 2007-01-10 | 株式会社東芝 | 赤外線固体撮像装置 |
JP3920763B2 (ja) * | 2001-11-29 | 2007-05-30 | 株式会社東芝 | センサ装置 |
JP2005210558A (ja) * | 2004-01-26 | 2005-08-04 | Nec Kansai Ltd | 光電流・電圧変換回路 |
JP3974902B2 (ja) * | 2004-02-27 | 2007-09-12 | 三菱電機株式会社 | 熱型赤外線検出素子 |
US8357900B2 (en) | 2008-01-08 | 2013-01-22 | Mitsubishi Electric Corporation | Thermal infrared detecting device |
JP5264418B2 (ja) * | 2008-01-08 | 2013-08-14 | 三菱電機株式会社 | 熱型赤外線検出素子 |
JP5264597B2 (ja) | 2008-04-03 | 2013-08-14 | 三菱電機株式会社 | 赤外線検出素子及び赤外線固体撮像装置 |
JP4959735B2 (ja) | 2009-02-23 | 2012-06-27 | 三菱電機株式会社 | 熱型赤外線検出素子 |
JP5425127B2 (ja) * | 2011-03-09 | 2014-02-26 | 株式会社東芝 | 固体撮像素子 |
JP2013200187A (ja) * | 2012-03-23 | 2013-10-03 | Toshiba Corp | 非冷却型赤外線撮像装置 |
JP6436728B2 (ja) | 2014-11-11 | 2018-12-12 | エイブリック株式会社 | 温度検出回路及び半導体装置 |
CN106248219A (zh) * | 2016-07-15 | 2016-12-21 | 天津大学 | 用于无tec红外成像系统的cmos工艺集成温度传感器 |
-
2020
- 2020-12-25 JP JP2021530257A patent/JP7120463B2/ja active Active
- 2020-12-25 WO PCT/JP2020/048675 patent/WO2021161675A1/ja unknown
- 2020-12-25 CN CN202080095629.2A patent/CN115053113A/zh active Pending
- 2020-12-25 EP EP20918160.1A patent/EP4105617A4/en active Pending
- 2020-12-25 US US17/781,735 patent/US11971306B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2002328732A (ja) * | 2001-05-07 | 2002-11-15 | Texas Instr Japan Ltd | 基準電圧発生回路 |
JP2007225398A (ja) * | 2006-02-22 | 2007-09-06 | Mitsubishi Electric Corp | 熱型赤外線検出器および熱型赤外線センサ |
JP2008258973A (ja) * | 2007-04-05 | 2008-10-23 | Mitsubishi Electric Corp | 熱型赤外線固体撮像素子及び赤外線カメラ |
JP2016535470A (ja) * | 2013-09-26 | 2016-11-10 | ヴァリアン メディカル システムズ インコーポレイテッド | 撮像素子のための画素アーキテクチャ |
WO2018235817A1 (ja) * | 2017-06-23 | 2018-12-27 | パイオニア株式会社 | 電磁波検出装置 |
Also Published As
Publication number | Publication date |
---|---|
EP4105617A4 (en) | 2023-08-16 |
JP7120463B2 (ja) | 2022-08-17 |
CN115053113A (zh) | 2022-09-13 |
US11971306B2 (en) | 2024-04-30 |
WO2021161675A1 (ja) | 2021-08-19 |
EP4105617A1 (en) | 2022-12-21 |
US20230003584A1 (en) | 2023-01-05 |
Similar Documents
Legal Events
Date | Code | Title | Description |
---|---|---|---|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20210527 |
|
A621 | Written request for application examination |
Free format text: JAPANESE INTERMEDIATE CODE: A621 Effective date: 20210527 |
|
A871 | Explanation of circumstances concerning accelerated examination |
Free format text: JAPANESE INTERMEDIATE CODE: A871 Effective date: 20210527 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20211026 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20211208 |
|
A131 | Notification of reasons for refusal |
Free format text: JAPANESE INTERMEDIATE CODE: A131 Effective date: 20220222 |
|
A521 | Request for written amendment filed |
Free format text: JAPANESE INTERMEDIATE CODE: A523 Effective date: 20220408 |
|
TRDD | Decision of grant or rejection written | ||
A01 | Written decision to grant a patent or to grant a registration (utility model) |
Free format text: JAPANESE INTERMEDIATE CODE: A01 Effective date: 20220705 |
|
A61 | First payment of annual fees (during grant procedure) |
Free format text: JAPANESE INTERMEDIATE CODE: A61 Effective date: 20220718 |
|
R150 | Certificate of patent or registration of utility model |
Ref document number: 7120463 Country of ref document: JP Free format text: JAPANESE INTERMEDIATE CODE: R150 |