JPWO2021161675A1 - - Google Patents

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Publication number
JPWO2021161675A1
JPWO2021161675A1 JP2021530257A JP2021530257A JPWO2021161675A1 JP WO2021161675 A1 JPWO2021161675 A1 JP WO2021161675A1 JP 2021530257 A JP2021530257 A JP 2021530257A JP 2021530257 A JP2021530257 A JP 2021530257A JP WO2021161675 A1 JPWO2021161675 A1 JP WO2021161675A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021530257A
Other versions
JP7120463B2 (ja
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Publication date
Application filed filed Critical
Publication of JPWO2021161675A1 publication Critical patent/JPWO2021161675A1/ja
Application granted granted Critical
Publication of JP7120463B2 publication Critical patent/JP7120463B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22Electrical features thereof
    • G01J5/24Use of specially adapted circuits, e.g. bridge circuits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J5/22Electrical features thereof
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01KMEASURING TEMPERATURE; MEASURING QUANTITY OF HEAT; THERMALLY-SENSITIVE ELEMENTS NOT OTHERWISE PROVIDED FOR
    • G01K7/00Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements
    • G01K7/01Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions
    • G01K7/015Measuring temperature based on the use of electric or magnetic elements directly sensitive to heat ; Power supply therefor, e.g. using thermoelectric elements using semiconducting elements having PN junctions using microstructures, e.g. made of silicon
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/02016Circuit arrangements of general character for the devices
    • H01L31/02019Circuit arrangements of general character for the devices for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02024Position sensitive and lateral effect photodetectors; Quadrant photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H01L31/101Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00Photometry, e.g. photographic exposure meter
    • G01J1/42Photometry, e.g. photographic exposure meter using electric radiation detectors
    • G01J1/44Electric circuits
    • G01J2001/4446Type of detector
    • G01J2001/446Photodiode
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J2005/0077Imaging
    • GPHYSICS
    • G01MEASURING; TESTING
    • G01JMEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J5/00Radiation pyrometry, e.g. infrared or optical thermometry
    • G01J5/10Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors
    • G01J5/20Radiation pyrometry, e.g. infrared or optical thermometry using electric radiation detectors using resistors, thermistors or semiconductors sensitive to radiation, e.g. photoconductive devices
    • G01J2005/202Arrays

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
JP2021530257A 2020-02-10 2020-12-25 赤外線検出素子 Active JP7120463B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2020020770 2020-02-10
JP2020020770 2020-02-10
PCT/JP2020/048675 WO2021161675A1 (ja) 2020-02-10 2020-12-25 赤外線検出素子

Publications (2)

Publication Number Publication Date
JPWO2021161675A1 true JPWO2021161675A1 (ja) 2021-08-19
JP7120463B2 JP7120463B2 (ja) 2022-08-17

Family

ID=77292361

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021530257A Active JP7120463B2 (ja) 2020-02-10 2020-12-25 赤外線検出素子

Country Status (5)

Country Link
US (1) US11971306B2 (ja)
EP (1) EP4105617A4 (ja)
JP (1) JP7120463B2 (ja)
CN (1) CN115053113A (ja)
WO (1) WO2021161675A1 (ja)

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002328732A (ja) * 2001-05-07 2002-11-15 Texas Instr Japan Ltd 基準電圧発生回路
JP2007225398A (ja) * 2006-02-22 2007-09-06 Mitsubishi Electric Corp 熱型赤外線検出器および熱型赤外線センサ
JP2008258973A (ja) * 2007-04-05 2008-10-23 Mitsubishi Electric Corp 熱型赤外線固体撮像素子及び赤外線カメラ
JP2016535470A (ja) * 2013-09-26 2016-11-10 ヴァリアン メディカル システムズ インコーポレイテッド 撮像素子のための画素アーキテクチャ

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0949762A (ja) * 1995-08-09 1997-02-18 Mitsubishi Electric Corp 光量電圧変換回路
US6028309A (en) * 1997-02-11 2000-02-22 Indigo Systems Corporation Methods and circuitry for correcting temperature-induced errors in microbolometer focal plane array
JP3866069B2 (ja) * 2001-09-26 2007-01-10 株式会社東芝 赤外線固体撮像装置
JP3920763B2 (ja) * 2001-11-29 2007-05-30 株式会社東芝 センサ装置
JP2005210558A (ja) * 2004-01-26 2005-08-04 Nec Kansai Ltd 光電流・電圧変換回路
JP3974902B2 (ja) * 2004-02-27 2007-09-12 三菱電機株式会社 熱型赤外線検出素子
US8357900B2 (en) 2008-01-08 2013-01-22 Mitsubishi Electric Corporation Thermal infrared detecting device
JP5264418B2 (ja) 2008-01-08 2013-08-14 三菱電機株式会社 熱型赤外線検出素子
US7911015B2 (en) 2008-04-03 2011-03-22 Mitsubishi Electric Corporation Infrared detector and infrared solid-state imaging device
JP4959735B2 (ja) 2009-02-23 2012-06-27 三菱電機株式会社 熱型赤外線検出素子
JP5425127B2 (ja) * 2011-03-09 2014-02-26 株式会社東芝 固体撮像素子
JP2013200187A (ja) * 2012-03-23 2013-10-03 Toshiba Corp 非冷却型赤外線撮像装置
JP6436728B2 (ja) 2014-11-11 2018-12-12 エイブリック株式会社 温度検出回路及び半導体装置
CN106248219A (zh) * 2016-07-15 2016-12-21 天津大学 用于无tec红外成像系统的cmos工艺集成温度传感器
WO2018235817A1 (ja) * 2017-06-23 2018-12-27 パイオニア株式会社 電磁波検出装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002328732A (ja) * 2001-05-07 2002-11-15 Texas Instr Japan Ltd 基準電圧発生回路
JP2007225398A (ja) * 2006-02-22 2007-09-06 Mitsubishi Electric Corp 熱型赤外線検出器および熱型赤外線センサ
JP2008258973A (ja) * 2007-04-05 2008-10-23 Mitsubishi Electric Corp 熱型赤外線固体撮像素子及び赤外線カメラ
JP2016535470A (ja) * 2013-09-26 2016-11-10 ヴァリアン メディカル システムズ インコーポレイテッド 撮像素子のための画素アーキテクチャ

Also Published As

Publication number Publication date
CN115053113A (zh) 2022-09-13
EP4105617A1 (en) 2022-12-21
US20230003584A1 (en) 2023-01-05
WO2021161675A1 (ja) 2021-08-19
JP7120463B2 (ja) 2022-08-17
EP4105617A4 (en) 2023-08-16
US11971306B2 (en) 2024-04-30

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