JPWO2021131299A1 - - Google Patents
Info
- Publication number
- JPWO2021131299A1 JPWO2021131299A1 JP2021566862A JP2021566862A JPWO2021131299A1 JP WO2021131299 A1 JPWO2021131299 A1 JP WO2021131299A1 JP 2021566862 A JP2021566862 A JP 2021566862A JP 2021566862 A JP2021566862 A JP 2021566862A JP WO2021131299 A1 JPWO2021131299 A1 JP WO2021131299A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
- C07F7/003—Compounds containing elements of Groups 4 or 14 of the Periodic Table without C-Metal linkages
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G25/00—Compounds of zirconium
- C01G25/02—Oxides
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F7/00—Compounds containing elements of Groups 4 or 14 of the Periodic Table
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/004—Photosensitive materials
- G03F7/0042—Photosensitive materials with inorganic or organometallic light-sensitive compounds not otherwise provided for, e.g. inorganic resists
- G03F7/0043—Chalcogenides; Silicon, germanium, arsenic or derivatives thereof; Metals, oxides or alloys thereof
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- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
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- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/82—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by IR- or Raman-data
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2002/00—Crystal-structural characteristics
- C01P2002/80—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70
- C01P2002/88—Crystal-structural characteristics defined by measured data other than those specified in group C01P2002/70 by thermal analysis data, e.g. TGA, DTA, DSC
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/01—Particle morphology depicted by an image
- C01P2004/03—Particle morphology depicted by an image obtained by SEM
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
- C01P2004/00—Particle morphology
- C01P2004/60—Particles characterised by their size
- C01P2004/64—Nanometer sized, i.e. from 1-100 nanometer
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
- G03F7/2004—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image characterised by the use of a particular light source, e.g. fluorescent lamps or deep UV light
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Inorganic Chemistry (AREA)
- Nanotechnology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Composite Materials (AREA)
- Materials Engineering (AREA)
- Crystallography & Structural Chemistry (AREA)
- Metallurgy (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Materials For Photolithography (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2019233067 | 2019-12-24 | ||
JP2019233067 | 2019-12-24 | ||
PCT/JP2020/040226 WO2021131299A1 (ja) | 2019-12-24 | 2020-10-27 | 有機修飾金属酸化物ナノ粒子、その製造方法、euvフォトレジスト材料およびエッチングマスクの製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
JPWO2021131299A1 true JPWO2021131299A1 (ja) | 2021-07-01 |
JP7291428B2 JP7291428B2 (ja) | 2023-06-15 |
Family
ID=76574167
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2021566862A Active JP7291428B2 (ja) | 2019-12-24 | 2020-10-27 | 有機修飾金属酸化物ナノ粒子、その製造方法、euvフォトレジスト材料およびエッチングマスクの製造方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US20220397823A1 (ja) |
JP (1) | JP7291428B2 (ja) |
KR (1) | KR102638489B1 (ja) |
TW (1) | TWI757938B (ja) |
WO (1) | WO2021131299A1 (ja) |
Families Citing this family (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US11747724B2 (en) * | 2019-12-24 | 2023-09-05 | Tokyo Ohka Kogyo Co., Ltd. | Organically modified metal oxide nanoparticles, organically modified metal oxide nanoparticles-containing solution, organically modified metal oxide nanoparticles-containing resist composition, and resist pattern forming method |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013216858A (ja) * | 2012-03-16 | 2013-10-24 | Nippon Shokubai Co Ltd | 金属酸化物粒子、組成物および金属酸化物粒子の製造方法 |
JP2017147314A (ja) * | 2016-02-17 | 2017-08-24 | 東京エレクトロン株式会社 | パターン形成方法 |
Family Cites Families (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6171757B1 (en) | 1999-07-12 | 2001-01-09 | International Business Machines Corporation | Organometallic polymers and use thereof |
JP5030694B2 (ja) | 2006-07-18 | 2012-09-19 | 株式会社日本触媒 | 酸化ジルコニウムナノ粒子 |
WO2011157820A1 (en) * | 2010-06-18 | 2011-12-22 | Dsm Ip Assets B.V. | Inorganic oxide coating |
JP5708521B2 (ja) | 2011-02-15 | 2015-04-30 | 信越化学工業株式会社 | レジスト材料及びこれを用いたパターン形成方法 |
CN103987688B (zh) * | 2011-12-09 | 2017-05-24 | 株式会社日本触媒 | 化合物、金属氧化物粒子及其制备方法和用途 |
SG11201508014WA (en) * | 2013-05-02 | 2015-10-29 | Tera Barrier Films Pte Ltd | Encapsulation barrier stack comprising dendrimer encapsulated nanop articles |
JP6196897B2 (ja) | 2013-12-05 | 2017-09-13 | 東京応化工業株式会社 | ネガ型レジスト組成物、レジストパターン形成方法及び錯体 |
US20150234272A1 (en) | 2014-02-14 | 2015-08-20 | Intel Corporation | Metal oxide nanoparticles and photoresist compositions |
CN104004359A (zh) * | 2014-04-14 | 2014-08-27 | 江苏嘉娜泰有机硅有限公司 | 一种高折光率功率型led封装有机硅 |
CN107636431A (zh) * | 2015-06-11 | 2018-01-26 | 佛罗里达大学研究基金会有限公司 | 单分散ir 吸收纳米颗粒以及相关方法和装置 |
US9696624B2 (en) * | 2015-07-29 | 2017-07-04 | Rohm And Haas Electronic Materials Llc | Nanoparticle-polymer resists |
JP6389839B2 (ja) | 2016-03-23 | 2018-09-12 | 株式会社先端ナノプロセス基盤開発センター | 感光性組成物およびパターン形成方法 |
KR20180123045A (ko) * | 2016-03-28 | 2018-11-14 | 제이에스알 가부시끼가이샤 | 감방사선성 조성물 및 패턴 형성 방법 |
JPWO2018101446A1 (ja) * | 2016-12-02 | 2019-10-24 | 国立大学法人京都大学 | 光電変換機能を有する電子デバイス |
-
2020
- 2020-10-27 US US17/785,147 patent/US20220397823A1/en active Pending
- 2020-10-27 JP JP2021566862A patent/JP7291428B2/ja active Active
- 2020-10-27 WO PCT/JP2020/040226 patent/WO2021131299A1/ja active Application Filing
- 2020-10-27 KR KR1020227020656A patent/KR102638489B1/ko active IP Right Grant
- 2020-10-28 TW TW109137521A patent/TWI757938B/zh active
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2013216858A (ja) * | 2012-03-16 | 2013-10-24 | Nippon Shokubai Co Ltd | 金属酸化物粒子、組成物および金属酸化物粒子の製造方法 |
JP2017147314A (ja) * | 2016-02-17 | 2017-08-24 | 東京エレクトロン株式会社 | パターン形成方法 |
Also Published As
Publication number | Publication date |
---|---|
KR102638489B1 (ko) | 2024-02-21 |
US20220397823A1 (en) | 2022-12-15 |
KR20220103762A (ko) | 2022-07-22 |
TWI757938B (zh) | 2022-03-11 |
TW202125100A (zh) | 2021-07-01 |
JP7291428B2 (ja) | 2023-06-15 |
WO2021131299A1 (ja) | 2021-07-01 |
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