JPWO2021124609A1 - - Google Patents
Info
- Publication number
- JPWO2021124609A1 JPWO2021124609A1 JP2021565327A JP2021565327A JPWO2021124609A1 JP WO2021124609 A1 JPWO2021124609 A1 JP WO2021124609A1 JP 2021565327 A JP2021565327 A JP 2021565327A JP 2021565327 A JP2021565327 A JP 2021565327A JP WO2021124609 A1 JPWO2021124609 A1 JP WO2021124609A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
- H10F39/8027—Geometry of the photosensitive area
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
- G01J1/00—Photometry, e.g. photographic exposure meter
- G01J1/02—Details
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/80—Constructional details of image sensors
- H10F39/806—Optical elements or arrangements associated with the image sensors
- H10F39/8067—Reflectors
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Light Receiving Elements (AREA)
- Photometry And Measurement Of Optical Pulse Characteristics (AREA)
- Solid State Image Pick-Up Elements (AREA)
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019227413 | 2019-12-17 | ||
| JP2019227413 | 2019-12-17 | ||
| PCT/JP2020/029339 WO2021124609A1 (ja) | 2019-12-17 | 2020-07-30 | 電磁波検出器および電磁波検出器集合体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021124609A1 true JPWO2021124609A1 (https=) | 2021-06-24 |
| JPWO2021124609A5 JPWO2021124609A5 (https=) | 2022-07-14 |
| JP7374222B2 JP7374222B2 (ja) | 2023-11-06 |
Family
ID=76478702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021565327A Active JP7374222B2 (ja) | 2019-12-17 | 2020-07-30 | 電磁波検出器および電磁波検出器集合体 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12199113B2 (https=) |
| JP (1) | JP7374222B2 (https=) |
| CN (1) | CN114846628B (https=) |
| WO (1) | WO2021124609A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7550854B2 (ja) * | 2020-06-15 | 2024-09-13 | 三菱電機株式会社 | 電磁波検出器および電磁波検出器アレイ |
| FR3114440B1 (fr) * | 2020-09-21 | 2022-08-19 | Commissariat Energie Atomique | Photodiode passivée comportant une portion périphérique ferroélectrique |
| FR3124311B1 (fr) * | 2021-06-16 | 2023-06-30 | St Microelectronics Crolles 2 Sas | Capteur photosensible et procédé de fabrication correspondant. |
| JP7562054B1 (ja) * | 2023-12-20 | 2024-10-04 | 三菱電機株式会社 | 電磁波検出器及び電磁波検出器アレイ |
| WO2026079611A1 (ko) * | 2024-10-10 | 2026-04-16 | 엘지이노텍 주식회사 | 단차 구조가 형성되는 필드 플레이트를 포함하는 spad 소자 |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004260184A (ja) * | 2003-02-25 | 2004-09-16 | Samsung Electronics Co Ltd | 光素子および光信号入出力装置 |
| US20130082241A1 (en) * | 2011-09-29 | 2013-04-04 | Francis J. Kub | Graphene on Semiconductor Detector |
| JP2013177273A (ja) * | 2012-02-28 | 2013-09-09 | Kyushu Univ | グラフェン薄膜の製造方法及びグラフェン薄膜 |
| US20150243826A1 (en) * | 2012-08-28 | 2015-08-27 | Northeastern University | Tunable heterojunction for multifunctional electronics and photovoltaics |
| JP2016025356A (ja) * | 2014-07-18 | 2016-02-08 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | グラフェン素子、その製造及び動作方法、並びにグラフェン素子を含む電子装置 |
| WO2017145299A1 (ja) * | 2016-02-24 | 2017-08-31 | 三菱電機株式会社 | 電磁波検出器 |
| WO2018173347A1 (ja) * | 2017-03-22 | 2018-09-27 | 三菱電機株式会社 | 電磁波検出器、電磁波検出器アレイおよび電磁波検出方法 |
| WO2019081492A1 (en) * | 2017-10-26 | 2019-05-02 | Emberion Oy | PHOTOSENSITIVE FIELD EFFECT TRANSISTOR |
| JP6528918B1 (ja) * | 2018-03-06 | 2019-06-12 | 三菱電機株式会社 | 電磁波検出器及びそれを備えた電磁波検出器アレイ |
| WO2019171622A1 (ja) * | 2018-03-06 | 2019-09-12 | 三菱電機株式会社 | 電磁波検出器及びそれを備えた電磁波検出器アレイ |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8530933B2 (en) * | 2008-10-10 | 2013-09-10 | National Institute Of Advanced Industrial Science And Technology | Photo transistor |
| US8053782B2 (en) * | 2009-08-24 | 2011-11-08 | International Business Machines Corporation | Single and few-layer graphene based photodetecting devices |
| JP5095864B2 (ja) * | 2009-12-09 | 2012-12-12 | シャープ株式会社 | 半導体装置およびその製造方法 |
| US9373685B2 (en) * | 2013-02-15 | 2016-06-21 | Samsung Electronics Co., Ltd. | Graphene device and electronic apparatus |
| KR102214833B1 (ko) * | 2014-06-17 | 2021-02-10 | 삼성전자주식회사 | 그래핀과 양자점을 포함하는 전자 소자 |
| KR102363563B1 (ko) * | 2016-03-03 | 2022-02-17 | 하마마츠 포토닉스 가부시키가이샤 | 반도체 광검출 소자 |
| KR102496483B1 (ko) * | 2017-11-23 | 2023-02-06 | 삼성전자주식회사 | 아발란치 광검출기 및 이를 포함하는 이미지 센서 |
-
2020
- 2020-07-30 WO PCT/JP2020/029339 patent/WO2021124609A1/ja not_active Ceased
- 2020-07-30 US US17/774,482 patent/US12199113B2/en active Active
- 2020-07-30 CN CN202080085891.9A patent/CN114846628B/zh active Active
- 2020-07-30 JP JP2021565327A patent/JP7374222B2/ja active Active
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2004260184A (ja) * | 2003-02-25 | 2004-09-16 | Samsung Electronics Co Ltd | 光素子および光信号入出力装置 |
| US20130082241A1 (en) * | 2011-09-29 | 2013-04-04 | Francis J. Kub | Graphene on Semiconductor Detector |
| JP2013177273A (ja) * | 2012-02-28 | 2013-09-09 | Kyushu Univ | グラフェン薄膜の製造方法及びグラフェン薄膜 |
| US20150243826A1 (en) * | 2012-08-28 | 2015-08-27 | Northeastern University | Tunable heterojunction for multifunctional electronics and photovoltaics |
| JP2016025356A (ja) * | 2014-07-18 | 2016-02-08 | 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． | グラフェン素子、その製造及び動作方法、並びにグラフェン素子を含む電子装置 |
| WO2017145299A1 (ja) * | 2016-02-24 | 2017-08-31 | 三菱電機株式会社 | 電磁波検出器 |
| WO2018173347A1 (ja) * | 2017-03-22 | 2018-09-27 | 三菱電機株式会社 | 電磁波検出器、電磁波検出器アレイおよび電磁波検出方法 |
| WO2019081492A1 (en) * | 2017-10-26 | 2019-05-02 | Emberion Oy | PHOTOSENSITIVE FIELD EFFECT TRANSISTOR |
| JP6528918B1 (ja) * | 2018-03-06 | 2019-06-12 | 三菱電機株式会社 | 電磁波検出器及びそれを備えた電磁波検出器アレイ |
| WO2019171622A1 (ja) * | 2018-03-06 | 2019-09-12 | 三菱電機株式会社 | 電磁波検出器及びそれを備えた電磁波検出器アレイ |
Also Published As
| Publication number | Publication date |
|---|---|
| JP7374222B2 (ja) | 2023-11-06 |
| US12199113B2 (en) | 2025-01-14 |
| WO2021124609A1 (ja) | 2021-06-24 |
| US20220392934A1 (en) | 2022-12-08 |
| CN114846628A (zh) | 2022-08-02 |
| CN114846628B (zh) | 2025-02-18 |
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