JPWO2021124609A5 - - Google Patents

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Publication number
JPWO2021124609A5
JPWO2021124609A5 JP2021565327A JP2021565327A JPWO2021124609A5 JP WO2021124609 A5 JPWO2021124609 A5 JP WO2021124609A5 JP 2021565327 A JP2021565327 A JP 2021565327A JP 2021565327 A JP2021565327 A JP 2021565327A JP WO2021124609 A5 JPWO2021124609 A5 JP WO2021124609A5
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JP
Japan
Prior art keywords
electromagnetic wave
semiconductor
material layer
dimensional material
wave detector
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JP2021565327A
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English (en)
Japanese (ja)
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JP7374222B2 (ja
JPWO2021124609A1 (https=
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Priority claimed from PCT/JP2020/029339 external-priority patent/WO2021124609A1/ja
Publication of JPWO2021124609A1 publication Critical patent/JPWO2021124609A1/ja
Publication of JPWO2021124609A5 publication Critical patent/JPWO2021124609A5/ja
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Publication of JP7374222B2 publication Critical patent/JP7374222B2/ja
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JP2021565327A 2019-12-17 2020-07-30 電磁波検出器および電磁波検出器集合体 Active JP7374222B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019227413 2019-12-17
JP2019227413 2019-12-17
PCT/JP2020/029339 WO2021124609A1 (ja) 2019-12-17 2020-07-30 電磁波検出器および電磁波検出器集合体

Publications (3)

Publication Number Publication Date
JPWO2021124609A1 JPWO2021124609A1 (https=) 2021-06-24
JPWO2021124609A5 true JPWO2021124609A5 (https=) 2022-07-14
JP7374222B2 JP7374222B2 (ja) 2023-11-06

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JP2021565327A Active JP7374222B2 (ja) 2019-12-17 2020-07-30 電磁波検出器および電磁波検出器集合体

Country Status (4)

Country Link
US (1) US12199113B2 (https=)
JP (1) JP7374222B2 (https=)
CN (1) CN114846628B (https=)
WO (1) WO2021124609A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7550854B2 (ja) * 2020-06-15 2024-09-13 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
FR3114440B1 (fr) * 2020-09-21 2022-08-19 Commissariat Energie Atomique Photodiode passivée comportant une portion périphérique ferroélectrique
FR3124311B1 (fr) * 2021-06-16 2023-06-30 St Microelectronics Crolles 2 Sas Capteur photosensible et procédé de fabrication correspondant.
JP7562054B1 (ja) * 2023-12-20 2024-10-04 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ
WO2026079611A1 (ko) * 2024-10-10 2026-04-16 엘지이노텍 주식회사 단차 구조가 형성되는 필드 플레이트를 포함하는 spad 소자

Family Cites Families (17)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040076330A (ko) * 2003-02-25 2004-09-01 삼성전자주식회사 실리콘 광소자 및 이를 적용한 광신호 입출력장치
US8530933B2 (en) * 2008-10-10 2013-09-10 National Institute Of Advanced Industrial Science And Technology Photo transistor
US8053782B2 (en) * 2009-08-24 2011-11-08 International Business Machines Corporation Single and few-layer graphene based photodetecting devices
JP5095864B2 (ja) * 2009-12-09 2012-12-12 シャープ株式会社 半導体装置およびその製造方法
US8872159B2 (en) 2011-09-29 2014-10-28 The United States Of America, As Represented By The Secretary Of The Navy Graphene on semiconductor detector
JP5885198B2 (ja) * 2012-02-28 2016-03-15 国立大学法人九州大学 グラフェン薄膜の製造方法及びグラフェン薄膜
WO2014036002A1 (en) 2012-08-28 2014-03-06 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
US9373685B2 (en) * 2013-02-15 2016-06-21 Samsung Electronics Co., Ltd. Graphene device and electronic apparatus
KR102214833B1 (ko) * 2014-06-17 2021-02-10 삼성전자주식회사 그래핀과 양자점을 포함하는 전자 소자
KR102237826B1 (ko) 2014-07-18 2021-04-08 삼성전자주식회사 그래핀 소자와 그 제조 및 동작방법과 그래핀 소자를 포함하는 전자장치
EP3422423B1 (en) 2016-02-24 2022-04-20 Mitsubishi Electric Corporation Electromagnetic wave detector
KR102363563B1 (ko) * 2016-03-03 2022-02-17 하마마츠 포토닉스 가부시키가이샤 반도체 광검출 소자
CN110402373B (zh) 2017-03-22 2021-07-30 三菱电机株式会社 电磁波检测器、电磁波检测器阵列以及电磁波检测方法
WO2019081492A1 (en) * 2017-10-26 2019-05-02 Emberion Oy PHOTOSENSITIVE FIELD EFFECT TRANSISTOR
KR102496483B1 (ko) * 2017-11-23 2023-02-06 삼성전자주식회사 아발란치 광검출기 및 이를 포함하는 이미지 센서
CN111788700B (zh) 2018-03-06 2024-06-28 三菱电机株式会社 电磁波检测器以及具备该电磁波检测器的电磁波检测器阵列
US11296251B2 (en) 2018-03-06 2022-04-05 Mitsubishi Electric Corporation Electromagnetic wave detector and electromagnetic wave detector array including the same

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