JPWO2021124609A5 - - Google Patents
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- Publication number
- JPWO2021124609A5 JPWO2021124609A5 JP2021565327A JP2021565327A JPWO2021124609A5 JP WO2021124609 A5 JPWO2021124609 A5 JP WO2021124609A5 JP 2021565327 A JP2021565327 A JP 2021565327A JP 2021565327 A JP2021565327 A JP 2021565327A JP WO2021124609 A5 JPWO2021124609 A5 JP WO2021124609A5
- Authority
- JP
- Japan
- Prior art keywords
- electromagnetic wave
- semiconductor
- material layer
- dimensional material
- wave detector
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 claims 36
- 239000000463 material Substances 0.000 claims 20
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 2
- 239000004020 conductor Substances 0.000 claims 2
- 229910021389 graphene Inorganic materials 0.000 claims 2
- 238000013459 approach Methods 0.000 claims 1
- 238000001514 detection method Methods 0.000 claims 1
- 230000000694 effects Effects 0.000 claims 1
- 230000003287 optical effect Effects 0.000 claims 1
- 230000001681 protective effect Effects 0.000 claims 1
- 230000035945 sensitivity Effects 0.000 claims 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019227413 | 2019-12-17 | ||
| JP2019227413 | 2019-12-17 | ||
| PCT/JP2020/029339 WO2021124609A1 (ja) | 2019-12-17 | 2020-07-30 | 電磁波検出器および電磁波検出器集合体 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021124609A1 JPWO2021124609A1 (https=) | 2021-06-24 |
| JPWO2021124609A5 true JPWO2021124609A5 (https=) | 2022-07-14 |
| JP7374222B2 JP7374222B2 (ja) | 2023-11-06 |
Family
ID=76478702
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021565327A Active JP7374222B2 (ja) | 2019-12-17 | 2020-07-30 | 電磁波検出器および電磁波検出器集合体 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12199113B2 (https=) |
| JP (1) | JP7374222B2 (https=) |
| CN (1) | CN114846628B (https=) |
| WO (1) | WO2021124609A1 (https=) |
Families Citing this family (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7550854B2 (ja) * | 2020-06-15 | 2024-09-13 | 三菱電機株式会社 | 電磁波検出器および電磁波検出器アレイ |
| FR3114440B1 (fr) * | 2020-09-21 | 2022-08-19 | Commissariat Energie Atomique | Photodiode passivée comportant une portion périphérique ferroélectrique |
| FR3124311B1 (fr) * | 2021-06-16 | 2023-06-30 | St Microelectronics Crolles 2 Sas | Capteur photosensible et procédé de fabrication correspondant. |
| JP7562054B1 (ja) * | 2023-12-20 | 2024-10-04 | 三菱電機株式会社 | 電磁波検出器及び電磁波検出器アレイ |
| WO2026079611A1 (ko) * | 2024-10-10 | 2026-04-16 | 엘지이노텍 주식회사 | 단차 구조가 형성되는 필드 플레이트를 포함하는 spad 소자 |
Family Cites Families (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR20040076330A (ko) * | 2003-02-25 | 2004-09-01 | 삼성전자주식회사 | 실리콘 광소자 및 이를 적용한 광신호 입출력장치 |
| US8530933B2 (en) * | 2008-10-10 | 2013-09-10 | National Institute Of Advanced Industrial Science And Technology | Photo transistor |
| US8053782B2 (en) * | 2009-08-24 | 2011-11-08 | International Business Machines Corporation | Single and few-layer graphene based photodetecting devices |
| JP5095864B2 (ja) * | 2009-12-09 | 2012-12-12 | シャープ株式会社 | 半導体装置およびその製造方法 |
| US8872159B2 (en) | 2011-09-29 | 2014-10-28 | The United States Of America, As Represented By The Secretary Of The Navy | Graphene on semiconductor detector |
| JP5885198B2 (ja) * | 2012-02-28 | 2016-03-15 | 国立大学法人九州大学 | グラフェン薄膜の製造方法及びグラフェン薄膜 |
| WO2014036002A1 (en) | 2012-08-28 | 2014-03-06 | Northeastern University | Tunable heterojunction for multifunctional electronics and photovoltaics |
| US9373685B2 (en) * | 2013-02-15 | 2016-06-21 | Samsung Electronics Co., Ltd. | Graphene device and electronic apparatus |
| KR102214833B1 (ko) * | 2014-06-17 | 2021-02-10 | 삼성전자주식회사 | 그래핀과 양자점을 포함하는 전자 소자 |
| KR102237826B1 (ko) | 2014-07-18 | 2021-04-08 | 삼성전자주식회사 | 그래핀 소자와 그 제조 및 동작방법과 그래핀 소자를 포함하는 전자장치 |
| EP3422423B1 (en) | 2016-02-24 | 2022-04-20 | Mitsubishi Electric Corporation | Electromagnetic wave detector |
| KR102363563B1 (ko) * | 2016-03-03 | 2022-02-17 | 하마마츠 포토닉스 가부시키가이샤 | 반도체 광검출 소자 |
| CN110402373B (zh) | 2017-03-22 | 2021-07-30 | 三菱电机株式会社 | 电磁波检测器、电磁波检测器阵列以及电磁波检测方法 |
| WO2019081492A1 (en) * | 2017-10-26 | 2019-05-02 | Emberion Oy | PHOTOSENSITIVE FIELD EFFECT TRANSISTOR |
| KR102496483B1 (ko) * | 2017-11-23 | 2023-02-06 | 삼성전자주식회사 | 아발란치 광검출기 및 이를 포함하는 이미지 센서 |
| CN111788700B (zh) | 2018-03-06 | 2024-06-28 | 三菱电机株式会社 | 电磁波检测器以及具备该电磁波检测器的电磁波检测器阵列 |
| US11296251B2 (en) | 2018-03-06 | 2022-04-05 | Mitsubishi Electric Corporation | Electromagnetic wave detector and electromagnetic wave detector array including the same |
-
2020
- 2020-07-30 WO PCT/JP2020/029339 patent/WO2021124609A1/ja not_active Ceased
- 2020-07-30 US US17/774,482 patent/US12199113B2/en active Active
- 2020-07-30 CN CN202080085891.9A patent/CN114846628B/zh active Active
- 2020-07-30 JP JP2021565327A patent/JP7374222B2/ja active Active
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