JP7374222B2 - 電磁波検出器および電磁波検出器集合体 - Google Patents

電磁波検出器および電磁波検出器集合体 Download PDF

Info

Publication number
JP7374222B2
JP7374222B2 JP2021565327A JP2021565327A JP7374222B2 JP 7374222 B2 JP7374222 B2 JP 7374222B2 JP 2021565327 A JP2021565327 A JP 2021565327A JP 2021565327 A JP2021565327 A JP 2021565327A JP 7374222 B2 JP7374222 B2 JP 7374222B2
Authority
JP
Japan
Prior art keywords
electromagnetic wave
semiconductor
dimensional material
material layer
wave detector
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
JP2021565327A
Other languages
English (en)
Japanese (ja)
Other versions
JPWO2021124609A5 (https=
JPWO2021124609A1 (https=
Inventor
昌一郎 福島
政彰 嶋谷
聡志 奥田
新平 小川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Publication of JPWO2021124609A1 publication Critical patent/JPWO2021124609A1/ja
Publication of JPWO2021124609A5 publication Critical patent/JPWO2021124609A5/ja
Application granted granted Critical
Publication of JP7374222B2 publication Critical patent/JP7374222B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2021565327A 2019-12-17 2020-07-30 電磁波検出器および電磁波検出器集合体 Active JP7374222B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019227413 2019-12-17
JP2019227413 2019-12-17
PCT/JP2020/029339 WO2021124609A1 (ja) 2019-12-17 2020-07-30 電磁波検出器および電磁波検出器集合体

Publications (3)

Publication Number Publication Date
JPWO2021124609A1 JPWO2021124609A1 (https=) 2021-06-24
JPWO2021124609A5 JPWO2021124609A5 (https=) 2022-07-14
JP7374222B2 true JP7374222B2 (ja) 2023-11-06

Family

ID=76478702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021565327A Active JP7374222B2 (ja) 2019-12-17 2020-07-30 電磁波検出器および電磁波検出器集合体

Country Status (4)

Country Link
US (1) US12199113B2 (https=)
JP (1) JP7374222B2 (https=)
CN (1) CN114846628B (https=)
WO (1) WO2021124609A1 (https=)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7550854B2 (ja) * 2020-06-15 2024-09-13 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
FR3114440B1 (fr) * 2020-09-21 2022-08-19 Commissariat Energie Atomique Photodiode passivée comportant une portion périphérique ferroélectrique
FR3124311B1 (fr) * 2021-06-16 2023-06-30 St Microelectronics Crolles 2 Sas Capteur photosensible et procédé de fabrication correspondant.
JP7562054B1 (ja) * 2023-12-20 2024-10-04 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ
WO2026079611A1 (ko) * 2024-10-10 2026-04-16 엘지이노텍 주식회사 단차 구조가 형성되는 필드 플레이트를 포함하는 spad 소자

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004260184A (ja) 2003-02-25 2004-09-16 Samsung Electronics Co Ltd 光素子および光信号入出力装置
US20130082241A1 (en) 2011-09-29 2013-04-04 Francis J. Kub Graphene on Semiconductor Detector
JP2013177273A (ja) 2012-02-28 2013-09-09 Kyushu Univ グラフェン薄膜の製造方法及びグラフェン薄膜
US20150243826A1 (en) 2012-08-28 2015-08-27 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
JP2016025356A (ja) 2014-07-18 2016-02-08 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． グラフェン素子、その製造及び動作方法、並びにグラフェン素子を含む電子装置
WO2017145299A1 (ja) 2016-02-24 2017-08-31 三菱電機株式会社 電磁波検出器
WO2018173347A1 (ja) 2017-03-22 2018-09-27 三菱電機株式会社 電磁波検出器、電磁波検出器アレイおよび電磁波検出方法
WO2019081492A1 (en) 2017-10-26 2019-05-02 Emberion Oy PHOTOSENSITIVE FIELD EFFECT TRANSISTOR
JP6528918B1 (ja) 2018-03-06 2019-06-12 三菱電機株式会社 電磁波検出器及びそれを備えた電磁波検出器アレイ
WO2019171622A1 (ja) 2018-03-06 2019-09-12 三菱電機株式会社 電磁波検出器及びそれを備えた電磁波検出器アレイ

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8530933B2 (en) * 2008-10-10 2013-09-10 National Institute Of Advanced Industrial Science And Technology Photo transistor
US8053782B2 (en) * 2009-08-24 2011-11-08 International Business Machines Corporation Single and few-layer graphene based photodetecting devices
JP5095864B2 (ja) * 2009-12-09 2012-12-12 シャープ株式会社 半導体装置およびその製造方法
US9373685B2 (en) * 2013-02-15 2016-06-21 Samsung Electronics Co., Ltd. Graphene device and electronic apparatus
KR102214833B1 (ko) * 2014-06-17 2021-02-10 삼성전자주식회사 그래핀과 양자점을 포함하는 전자 소자
KR102363563B1 (ko) * 2016-03-03 2022-02-17 하마마츠 포토닉스 가부시키가이샤 반도체 광검출 소자
KR102496483B1 (ko) * 2017-11-23 2023-02-06 삼성전자주식회사 아발란치 광검출기 및 이를 포함하는 이미지 센서

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004260184A (ja) 2003-02-25 2004-09-16 Samsung Electronics Co Ltd 光素子および光信号入出力装置
US20130082241A1 (en) 2011-09-29 2013-04-04 Francis J. Kub Graphene on Semiconductor Detector
JP2013177273A (ja) 2012-02-28 2013-09-09 Kyushu Univ グラフェン薄膜の製造方法及びグラフェン薄膜
US20150243826A1 (en) 2012-08-28 2015-08-27 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
JP2016025356A (ja) 2014-07-18 2016-02-08 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． グラフェン素子、その製造及び動作方法、並びにグラフェン素子を含む電子装置
WO2017145299A1 (ja) 2016-02-24 2017-08-31 三菱電機株式会社 電磁波検出器
WO2018173347A1 (ja) 2017-03-22 2018-09-27 三菱電機株式会社 電磁波検出器、電磁波検出器アレイおよび電磁波検出方法
WO2019081492A1 (en) 2017-10-26 2019-05-02 Emberion Oy PHOTOSENSITIVE FIELD EFFECT TRANSISTOR
JP6528918B1 (ja) 2018-03-06 2019-06-12 三菱電機株式会社 電磁波検出器及びそれを備えた電磁波検出器アレイ
WO2019171622A1 (ja) 2018-03-06 2019-09-12 三菱電機株式会社 電磁波検出器及びそれを備えた電磁波検出器アレイ

Also Published As

Publication number Publication date
US12199113B2 (en) 2025-01-14
WO2021124609A1 (ja) 2021-06-24
JPWO2021124609A1 (https=) 2021-06-24
US20220392934A1 (en) 2022-12-08
CN114846628A (zh) 2022-08-02
CN114846628B (zh) 2025-02-18

Similar Documents

Publication Publication Date Title
US11682741B2 (en) Electromagnetic wave detector
JP7374222B2 (ja) 電磁波検出器および電磁波検出器集合体
US11876141B2 (en) Electronic device using graphene, manufacturing method for the device, and electromagnetic wave detector including the device
US10784394B2 (en) Electromagnetic wave detector and electromagnetic wave detector array
JP7550854B2 (ja) 電磁波検出器および電磁波検出器アレイ
JP7499857B2 (ja) 電磁波検出器および電磁波検出器集合体
JP7345593B2 (ja) 電磁波検出器および電磁波検出器アレイ
JP7399361B2 (ja) 電磁波検出器及び電磁波検出器アレイ
JP7422963B1 (ja) 電磁波検出器
JP7740896B2 (ja) 電磁波検出器および電磁波検出器集合体
JP7403670B2 (ja) 電磁波検出器および電磁波検出器アレイ
JP7321403B1 (ja) 電磁波検出器及び電磁波検出器アレイ
US20250185515A1 (en) Electromagnetic wave detector, electromagnetic wave detector array, and image sensor
JP7562054B1 (ja) 電磁波検出器及び電磁波検出器アレイ
WO2024100784A1 (ja) 電磁波検出器および電磁波検出器集合体
WO2025109660A1 (ja) ガス検出器及びガス検出器アレイ

Legal Events

Date Code Title Description
A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20220420

A621 Written request for application examination

Free format text: JAPANESE INTERMEDIATE CODE: A621

Effective date: 20220420

A131 Notification of reasons for refusal

Free format text: JAPANESE INTERMEDIATE CODE: A131

Effective date: 20230523

A521 Request for written amendment filed

Free format text: JAPANESE INTERMEDIATE CODE: A523

Effective date: 20230720

TRDD Decision of grant or rejection written
A01 Written decision to grant a patent or to grant a registration (utility model)

Free format text: JAPANESE INTERMEDIATE CODE: A01

Effective date: 20230926

A61 First payment of annual fees (during grant procedure)

Free format text: JAPANESE INTERMEDIATE CODE: A61

Effective date: 20231024

R150 Certificate of patent or registration of utility model

Ref document number: 7374222

Country of ref document: JP

Free format text: JAPANESE INTERMEDIATE CODE: R150