CN114846628B - 电磁波检测器以及电磁波检测器集合体 - Google Patents

电磁波检测器以及电磁波检测器集合体 Download PDF

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Publication number
CN114846628B
CN114846628B CN202080085891.9A CN202080085891A CN114846628B CN 114846628 B CN114846628 B CN 114846628B CN 202080085891 A CN202080085891 A CN 202080085891A CN 114846628 B CN114846628 B CN 114846628B
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Prior art keywords
electromagnetic wave
semiconductor
dimensional material
material layer
wave detector
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CN202080085891.9A
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English (en)
Chinese (zh)
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CN114846628A (zh
Inventor
福岛昌一郎
岛谷政彰
奥田聪志
小川新平
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Mitsubishi Electric Corp
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Mitsubishi Electric Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/802—Geometry or disposition of elements in pixels, e.g. address-lines or gate electrodes
    • H10F39/8027—Geometry of the photosensitive area
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8067—Reflectors

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202080085891.9A 2019-12-17 2020-07-30 电磁波检测器以及电磁波检测器集合体 Active CN114846628B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019227413 2019-12-17
JP2019-227413 2019-12-17
PCT/JP2020/029339 WO2021124609A1 (ja) 2019-12-17 2020-07-30 電磁波検出器および電磁波検出器集合体

Publications (2)

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CN114846628A CN114846628A (zh) 2022-08-02
CN114846628B true CN114846628B (zh) 2025-02-18

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Country Link
US (1) US12199113B2 (https=)
JP (1) JP7374222B2 (https=)
CN (1) CN114846628B (https=)
WO (1) WO2021124609A1 (https=)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7550854B2 (ja) * 2020-06-15 2024-09-13 三菱電機株式会社 電磁波検出器および電磁波検出器アレイ
FR3114440B1 (fr) * 2020-09-21 2022-08-19 Commissariat Energie Atomique Photodiode passivée comportant une portion périphérique ferroélectrique
FR3124311B1 (fr) * 2021-06-16 2023-06-30 St Microelectronics Crolles 2 Sas Capteur photosensible et procédé de fabrication correspondant.
JP7562054B1 (ja) * 2023-12-20 2024-10-04 三菱電機株式会社 電磁波検出器及び電磁波検出器アレイ
WO2026079611A1 (ko) * 2024-10-10 2026-04-16 엘지이노텍 주식회사 단차 구조가 형성되는 필드 플레이트를 포함하는 spad 소자

Citations (1)

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JP2013177273A (ja) * 2012-02-28 2013-09-09 Kyushu Univ グラフェン薄膜の製造方法及びグラフェン薄膜

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KR20040076330A (ko) * 2003-02-25 2004-09-01 삼성전자주식회사 실리콘 광소자 및 이를 적용한 광신호 입출력장치
US8530933B2 (en) * 2008-10-10 2013-09-10 National Institute Of Advanced Industrial Science And Technology Photo transistor
US8053782B2 (en) * 2009-08-24 2011-11-08 International Business Machines Corporation Single and few-layer graphene based photodetecting devices
JP5095864B2 (ja) * 2009-12-09 2012-12-12 シャープ株式会社 半導体装置およびその製造方法
US8872159B2 (en) 2011-09-29 2014-10-28 The United States Of America, As Represented By The Secretary Of The Navy Graphene on semiconductor detector
WO2014036002A1 (en) 2012-08-28 2014-03-06 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
US9373685B2 (en) * 2013-02-15 2016-06-21 Samsung Electronics Co., Ltd. Graphene device and electronic apparatus
KR102214833B1 (ko) * 2014-06-17 2021-02-10 삼성전자주식회사 그래핀과 양자점을 포함하는 전자 소자
KR102237826B1 (ko) 2014-07-18 2021-04-08 삼성전자주식회사 그래핀 소자와 그 제조 및 동작방법과 그래핀 소자를 포함하는 전자장치
EP3422423B1 (en) 2016-02-24 2022-04-20 Mitsubishi Electric Corporation Electromagnetic wave detector
KR102363563B1 (ko) * 2016-03-03 2022-02-17 하마마츠 포토닉스 가부시키가이샤 반도체 광검출 소자
CN110402373B (zh) 2017-03-22 2021-07-30 三菱电机株式会社 电磁波检测器、电磁波检测器阵列以及电磁波检测方法
WO2019081492A1 (en) * 2017-10-26 2019-05-02 Emberion Oy PHOTOSENSITIVE FIELD EFFECT TRANSISTOR
KR102496483B1 (ko) * 2017-11-23 2023-02-06 삼성전자주식회사 아발란치 광검출기 및 이를 포함하는 이미지 센서
CN111788700B (zh) 2018-03-06 2024-06-28 三菱电机株式会社 电磁波检测器以及具备该电磁波检测器的电磁波检测器阵列
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JP2013177273A (ja) * 2012-02-28 2013-09-09 Kyushu Univ グラフェン薄膜の製造方法及びグラフェン薄膜

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JP7374222B2 (ja) 2023-11-06
US12199113B2 (en) 2025-01-14
WO2021124609A1 (ja) 2021-06-24
JPWO2021124609A1 (https=) 2021-06-24
US20220392934A1 (en) 2022-12-08
CN114846628A (zh) 2022-08-02

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