JPWO2021124609A1 - - Google Patents

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Publication number
JPWO2021124609A1
JPWO2021124609A1 JP2021565327A JP2021565327A JPWO2021124609A1 JP WO2021124609 A1 JPWO2021124609 A1 JP WO2021124609A1 JP 2021565327 A JP2021565327 A JP 2021565327A JP 2021565327 A JP2021565327 A JP 2021565327A JP WO2021124609 A1 JPWO2021124609 A1 JP WO2021124609A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP2021565327A
Other versions
JP7374222B2 (ja
JPWO2021124609A5 (ja
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Filing date
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Publication of JPWO2021124609A1 publication Critical patent/JPWO2021124609A1/ja
Publication of JPWO2021124609A5 publication Critical patent/JPWO2021124609A5/ja
Application granted granted Critical
Publication of JP7374222B2 publication Critical patent/JP7374222B2/ja
Active legal-status Critical Current
Anticipated expiration legal-status Critical

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • H01L27/14607—Geometry of the photosensitive area
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01J—MEASUREMENT OF INTENSITY, VELOCITY, SPECTRAL CONTENT, POLARISATION, PHASE OR PULSE CHARACTERISTICS OF INFRARED, VISIBLE OR ULTRAVIOLET LIGHT; COLORIMETRY; RADIATION PYROMETRY
    • G01J1/00—Photometry, e.g. photographic exposure meter
    • G01J1/02—Details
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14625—Optical elements or arrangements associated with the device
    • H01L27/14629—Reflectors

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Light Receiving Elements (AREA)
JP2021565327A 2019-12-17 2020-07-30 電磁波検出器および電磁波検出器集合体 Active JP7374222B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019227413 2019-12-17
JP2019227413 2019-12-17
PCT/JP2020/029339 WO2021124609A1 (ja) 2019-12-17 2020-07-30 電磁波検出器および電磁波検出器集合体

Publications (3)

Publication Number Publication Date
JPWO2021124609A1 true JPWO2021124609A1 (ja) 2021-06-24
JPWO2021124609A5 JPWO2021124609A5 (ja) 2022-07-14
JP7374222B2 JP7374222B2 (ja) 2023-11-06

Family

ID=76478702

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021565327A Active JP7374222B2 (ja) 2019-12-17 2020-07-30 電磁波検出器および電磁波検出器集合体

Country Status (4)

Country Link
US (1) US20220392934A1 (ja)
JP (1) JP7374222B2 (ja)
CN (1) CN114846628A (ja)
WO (1) WO2021124609A1 (ja)

Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004260184A (ja) * 2003-02-25 2004-09-16 Samsung Electronics Co Ltd 光素子および光信号入出力装置
US20130082241A1 (en) * 2011-09-29 2013-04-04 Francis J. Kub Graphene on Semiconductor Detector
JP2013177273A (ja) * 2012-02-28 2013-09-09 Kyushu Univ グラフェン薄膜の製造方法及びグラフェン薄膜
US20150243826A1 (en) * 2012-08-28 2015-08-27 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
JP2016025356A (ja) * 2014-07-18 2016-02-08 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． グラフェン素子、その製造及び動作方法、並びにグラフェン素子を含む電子装置
WO2017145299A1 (ja) * 2016-02-24 2017-08-31 三菱電機株式会社 電磁波検出器
WO2018173347A1 (ja) * 2017-03-22 2018-09-27 三菱電機株式会社 電磁波検出器、電磁波検出器アレイおよび電磁波検出方法
WO2019081492A1 (en) * 2017-10-26 2019-05-02 Emberion Oy PHOTOSENSITIVE FIELD EFFECT TRANSISTOR
JP6528918B1 (ja) * 2018-03-06 2019-06-12 三菱電機株式会社 電磁波検出器及びそれを備えた電磁波検出器アレイ
WO2019171622A1 (ja) * 2018-03-06 2019-09-12 三菱電機株式会社 電磁波検出器及びそれを備えた電磁波検出器アレイ

Patent Citations (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004260184A (ja) * 2003-02-25 2004-09-16 Samsung Electronics Co Ltd 光素子および光信号入出力装置
US20130082241A1 (en) * 2011-09-29 2013-04-04 Francis J. Kub Graphene on Semiconductor Detector
JP2013177273A (ja) * 2012-02-28 2013-09-09 Kyushu Univ グラフェン薄膜の製造方法及びグラフェン薄膜
US20150243826A1 (en) * 2012-08-28 2015-08-27 Northeastern University Tunable heterojunction for multifunctional electronics and photovoltaics
JP2016025356A (ja) * 2014-07-18 2016-02-08 三星電子株式会社Ｓａｍｓｕｎｇ Ｅｌｅｃｔｒｏｎｉｃｓ Ｃｏ．，Ｌｔｄ． グラフェン素子、その製造及び動作方法、並びにグラフェン素子を含む電子装置
WO2017145299A1 (ja) * 2016-02-24 2017-08-31 三菱電機株式会社 電磁波検出器
WO2018173347A1 (ja) * 2017-03-22 2018-09-27 三菱電機株式会社 電磁波検出器、電磁波検出器アレイおよび電磁波検出方法
WO2019081492A1 (en) * 2017-10-26 2019-05-02 Emberion Oy PHOTOSENSITIVE FIELD EFFECT TRANSISTOR
JP6528918B1 (ja) * 2018-03-06 2019-06-12 三菱電機株式会社 電磁波検出器及びそれを備えた電磁波検出器アレイ
WO2019171622A1 (ja) * 2018-03-06 2019-09-12 三菱電機株式会社 電磁波検出器及びそれを備えた電磁波検出器アレイ

Also Published As

Publication number Publication date
JP7374222B2 (ja) 2023-11-06
CN114846628A (zh) 2022-08-02
WO2021124609A1 (ja) 2021-06-24
US20220392934A1 (en) 2022-12-08

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