JPWO2021117511A1 - - Google Patents

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Publication number
JPWO2021117511A1
JPWO2021117511A1 JP2021563853A JP2021563853A JPWO2021117511A1 JP WO2021117511 A1 JPWO2021117511 A1 JP WO2021117511A1 JP 2021563853 A JP2021563853 A JP 2021563853A JP 2021563853 A JP2021563853 A JP 2021563853A JP WO2021117511 A1 JPWO2021117511 A1 JP WO2021117511A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP2021563853A
Other languages
Japanese (ja)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of JPWO2021117511A1 publication Critical patent/JPWO2021117511A1/ja
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/131—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
JP2021563853A 2019-12-10 2020-11-27 Pending JPWO2021117511A1 (https=)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2019222999 2019-12-10
PCT/JP2020/044298 WO2021117511A1 (ja) 2019-12-10 2020-11-27 撮像装置および電子機器

Publications (1)

Publication Number Publication Date
JPWO2021117511A1 true JPWO2021117511A1 (https=) 2021-06-17

Family

ID=76328963

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021563853A Pending JPWO2021117511A1 (https=) 2019-12-10 2020-11-27

Country Status (6)

Country Link
US (1) US12155950B2 (https=)
EP (1) EP4075793A4 (https=)
JP (1) JPWO2021117511A1 (https=)
CN (1) CN114731380B (https=)
TW (1) TW202133411A (https=)
WO (1) WO2021117511A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113437101B (zh) * 2015-02-27 2025-03-21 索尼公司 固态图像感测装置及电子装置
TWI869504B (zh) * 2019-12-13 2025-01-11 日商索尼半導體解決方案公司 攝像裝置及電子機器
CN116801121B (zh) * 2022-03-09 2025-08-29 思特威(上海)电子科技股份有限公司 像素结构、图像传感器、电子设备及控制方法

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012037777A (ja) * 2010-08-09 2012-02-23 Canon Inc 撮像装置
JP2013157883A (ja) * 2012-01-31 2013-08-15 Sony Corp 固体撮像素子およびカメラシステム
JP2015091025A (ja) * 2013-11-06 2015-05-11 ソニー株式会社 固体撮像装置およびその駆動方法、並びに電子機器
JP2015133469A (ja) * 2013-12-12 2015-07-23 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP2015164284A (ja) * 2014-01-28 2015-09-10 キヤノン株式会社 固体撮像素子、動き情報取得装置、および撮像装置
JP2017034606A (ja) * 2015-08-05 2017-02-09 キヤノン株式会社 撮像素子およびその制御方法、ならびに撮像装置
JP2019193169A (ja) * 2018-04-26 2019-10-31 キヤノン株式会社 撮像装置、撮像システム、および、移動体

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100697793B1 (ko) * 2005-12-28 2007-03-21 후지쯔 가부시끼가이샤 반도체 촬상 장치
JP2009038263A (ja) * 2007-08-02 2009-02-19 Sharp Corp 固体撮像素子および電子情報機器
GB2492387B (en) 2011-06-30 2017-07-19 Cmosis Nv Pixel array with individual exposure control for a pixel or pixel region
JP5556823B2 (ja) * 2012-01-13 2014-07-23 株式会社ニコン 固体撮像装置および電子カメラ
JP2015037102A (ja) * 2013-08-12 2015-02-23 株式会社東芝 固体撮像装置
JP6341675B2 (ja) 2014-01-29 2018-06-13 キヤノン株式会社 固体撮像装置及びその駆動方法並びにそれを用いた撮像システム
US9699393B2 (en) * 2014-06-26 2017-07-04 Semiconductor Components Industries, Llc Imaging systems for infrared and visible imaging with patterned infrared cutoff filters
JP2016058559A (ja) * 2014-09-10 2016-04-21 ソニー株式会社 固体撮像装置およびその駆動方法、並びに電子機器
CN113437101B (zh) 2015-02-27 2025-03-21 索尼公司 固态图像感测装置及电子装置
TWI717450B (zh) * 2016-02-18 2021-02-01 日商新力股份有限公司 固體攝像裝置、固體攝像裝置之驅動方法、及電子機器
JP2019036770A (ja) * 2017-08-10 2019-03-07 キヤノン株式会社 撮像装置及び撮像システム
JP6953263B2 (ja) * 2017-10-05 2021-10-27 キヤノン株式会社 固体撮像装置および撮像システム

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012037777A (ja) * 2010-08-09 2012-02-23 Canon Inc 撮像装置
JP2013157883A (ja) * 2012-01-31 2013-08-15 Sony Corp 固体撮像素子およびカメラシステム
JP2015091025A (ja) * 2013-11-06 2015-05-11 ソニー株式会社 固体撮像装置およびその駆動方法、並びに電子機器
JP2015133469A (ja) * 2013-12-12 2015-07-23 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP2015164284A (ja) * 2014-01-28 2015-09-10 キヤノン株式会社 固体撮像素子、動き情報取得装置、および撮像装置
JP2017034606A (ja) * 2015-08-05 2017-02-09 キヤノン株式会社 撮像素子およびその制御方法、ならびに撮像装置
JP2019193169A (ja) * 2018-04-26 2019-10-31 キヤノン株式会社 撮像装置、撮像システム、および、移動体

Also Published As

Publication number Publication date
TW202133411A (zh) 2021-09-01
EP4075793A1 (en) 2022-10-19
WO2021117511A1 (ja) 2021-06-17
US20220408051A1 (en) 2022-12-22
US12155950B2 (en) 2024-11-26
CN114731380B (zh) 2025-12-19
EP4075793A4 (en) 2023-01-04
CN114731380A (zh) 2022-07-08

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