CN114731380B - 成像装置和电子设备 - Google Patents

成像装置和电子设备

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Publication number
CN114731380B
CN114731380B CN202080081365.5A CN202080081365A CN114731380B CN 114731380 B CN114731380 B CN 114731380B CN 202080081365 A CN202080081365 A CN 202080081365A CN 114731380 B CN114731380 B CN 114731380B
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China
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pixel
charge
unit
imaging device
conversion unit
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CN202080081365.5A
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English (en)
Chinese (zh)
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CN114731380A (zh
Inventor
町田贵志
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Sony Semiconductor Solutions Corp
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Sony Semiconductor Solutions Corp
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/807—Pixel isolation structures
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/702—SSIS architectures characterised by non-identical, non-equidistant or non-planar pixel layout
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/703—SSIS architectures incorporating pixels for producing signals other than image signals
    • H04N25/704—Pixels specially adapted for focusing, e.g. phase difference pixel sets
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/76—Addressed sensors, e.g. MOS or CMOS sensors
    • H04N25/77—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components
    • H04N25/771—Pixel circuitry, e.g. memories, A/D converters, pixel amplifiers, shared circuits or shared components comprising storage means other than floating diffusion
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/79—Arrangements of circuitry being divided between different or multiple substrates, chips or circuit boards, e.g. stacked image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/199—Back-illuminated image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/803—Pixels having integrated switching, control, storage or amplification elements
    • H10F39/8037—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor
    • H10F39/80373—Pixels having integrated switching, control, storage or amplification elements the integrated elements comprising a transistor characterised by the gate of the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/809—Constructional details of image sensors of hybrid image sensors
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/10—Circuitry of solid-state image sensors [SSIS]; Control thereof for transforming different wavelengths into image signals
    • H04N25/11—Arrangement of colour filter arrays [CFA]; Filter mosaics
    • H04N25/13—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements
    • H04N25/131—Arrangement of colour filter arrays [CFA]; Filter mosaics characterised by the spectral characteristics of the filter elements including elements passing infrared wavelengths
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/184—Infrared image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections

Landscapes

  • Engineering & Computer Science (AREA)
  • Multimedia (AREA)
  • Signal Processing (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN202080081365.5A 2019-12-10 2020-11-27 成像装置和电子设备 Active CN114731380B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019222999 2019-12-10
JP2019-222999 2019-12-10
PCT/JP2020/044298 WO2021117511A1 (ja) 2019-12-10 2020-11-27 撮像装置および電子機器

Publications (2)

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CN114731380A CN114731380A (zh) 2022-07-08
CN114731380B true CN114731380B (zh) 2025-12-19

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US (1) US12155950B2 (https=)
EP (1) EP4075793A4 (https=)
JP (1) JPWO2021117511A1 (https=)
CN (1) CN114731380B (https=)
TW (1) TW202133411A (https=)
WO (1) WO2021117511A1 (https=)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113437101B (zh) * 2015-02-27 2025-03-21 索尼公司 固态图像感测装置及电子装置
TWI869504B (zh) * 2019-12-13 2025-01-11 日商索尼半導體解決方案公司 攝像裝置及電子機器
CN116801121B (zh) * 2022-03-09 2025-08-29 思特威(上海)电子科技股份有限公司 像素结构、图像传感器、电子设备及控制方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103227897A (zh) * 2012-01-31 2013-07-31 索尼公司 固态图像传感器和相机系统
CN110418080A (zh) * 2018-04-26 2019-11-05 佳能株式会社 成像设备、成像系统和移动体

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KR100697793B1 (ko) * 2005-12-28 2007-03-21 후지쯔 가부시끼가이샤 반도체 촬상 장치
JP2009038263A (ja) * 2007-08-02 2009-02-19 Sharp Corp 固体撮像素子および電子情報機器
JP5693082B2 (ja) * 2010-08-09 2015-04-01 キヤノン株式会社 撮像装置
GB2492387B (en) 2011-06-30 2017-07-19 Cmosis Nv Pixel array with individual exposure control for a pixel or pixel region
JP5556823B2 (ja) * 2012-01-13 2014-07-23 株式会社ニコン 固体撮像装置および電子カメラ
JP2015037102A (ja) * 2013-08-12 2015-02-23 株式会社東芝 固体撮像装置
JP6176062B2 (ja) * 2013-11-06 2017-08-09 ソニー株式会社 固体撮像装置およびその駆動方法、並びに電子機器
JP6233188B2 (ja) * 2013-12-12 2017-11-22 ソニー株式会社 固体撮像素子およびその製造方法、並びに電子機器
JP2015164284A (ja) * 2014-01-28 2015-09-10 キヤノン株式会社 固体撮像素子、動き情報取得装置、および撮像装置
JP6341675B2 (ja) 2014-01-29 2018-06-13 キヤノン株式会社 固体撮像装置及びその駆動方法並びにそれを用いた撮像システム
US9699393B2 (en) * 2014-06-26 2017-07-04 Semiconductor Components Industries, Llc Imaging systems for infrared and visible imaging with patterned infrared cutoff filters
JP2016058559A (ja) * 2014-09-10 2016-04-21 ソニー株式会社 固体撮像装置およびその駆動方法、並びに電子機器
CN113437101B (zh) 2015-02-27 2025-03-21 索尼公司 固态图像感测装置及电子装置
JP6595839B2 (ja) * 2015-08-05 2019-10-23 キヤノン株式会社 撮像素子およびその制御方法、ならびに撮像装置
TWI717450B (zh) * 2016-02-18 2021-02-01 日商新力股份有限公司 固體攝像裝置、固體攝像裝置之驅動方法、及電子機器
JP2019036770A (ja) * 2017-08-10 2019-03-07 キヤノン株式会社 撮像装置及び撮像システム
JP6953263B2 (ja) * 2017-10-05 2021-10-27 キヤノン株式会社 固体撮像装置および撮像システム

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103227897A (zh) * 2012-01-31 2013-07-31 索尼公司 固态图像传感器和相机系统
CN110418080A (zh) * 2018-04-26 2019-11-05 佳能株式会社 成像设备、成像系统和移动体

Also Published As

Publication number Publication date
TW202133411A (zh) 2021-09-01
JPWO2021117511A1 (https=) 2021-06-17
EP4075793A1 (en) 2022-10-19
WO2021117511A1 (ja) 2021-06-17
US20220408051A1 (en) 2022-12-22
US12155950B2 (en) 2024-11-26
EP4075793A4 (en) 2023-01-04
CN114731380A (zh) 2022-07-08

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