JPWO2021090861A1 - - Google Patents

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Publication number
JPWO2021090861A1
JPWO2021090861A1 JP2021554959A JP2021554959A JPWO2021090861A1 JP WO2021090861 A1 JPWO2021090861 A1 JP WO2021090861A1 JP 2021554959 A JP2021554959 A JP 2021554959A JP 2021554959 A JP2021554959 A JP 2021554959A JP WO2021090861 A1 JPWO2021090861 A1 JP WO2021090861A1
Authority
JP
Japan
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Application number
JP2021554959A
Other versions
JP7380703B2 (ja
JPWO2021090861A5 (ja
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Publication of JPWO2021090861A1 publication Critical patent/JPWO2021090861A1/ja
Publication of JPWO2021090861A5 publication Critical patent/JPWO2021090861A5/ja
Application granted granted Critical
Publication of JP7380703B2 publication Critical patent/JP7380703B2/ja
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02047—Treatment of substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02574—Characteristics of substrate, e.g. cutting angles of combined substrates, multilayered substrates, piezoelectrical layers on not-piezoelectrical substrate
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02015—Characteristics of piezoelectric layers, e.g. cutting angles
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02007—Details of bulk acoustic wave devices
    • H03H9/02086—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02543—Characteristics of substrate, e.g. cutting angles
    • H03H9/02559—Characteristics of substrate, e.g. cutting angles of lithium niobate or lithium-tantalate substrates
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/02535—Details of surface acoustic wave devices
    • H03H9/02818—Means for compensation or elimination of undesirable effects
    • H03H9/02866—Means for compensation or elimination of undesirable effects of bulk wave excitation and reflections
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0504—Holders; Supports for bulk acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/058—Holders; Supports for surface acoustic wave devices
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/05—Holders; Supports
    • H03H9/0595—Holders; Supports the holder support and resonator being formed in one body
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H9/125—Driving means, e.g. electrodes, coils
    • H03H9/145—Driving means, e.g. electrodes, coils for networks using surface acoustic waves
    • H03H9/14538—Formation
    • H03H9/14541—Multilayer finger or busbar electrode
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
    • H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
    • H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/25—Constructional features of resonators using surface acoustic waves

Landscapes

  • Physics & Mathematics (AREA)
  • Acoustics & Sound (AREA)
  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Surface Acoustic Wave Elements And Circuit Networks Thereof (AREA)
JP2021554959A 2019-11-06 2020-11-05 弾性波装置 Active JP7380703B2 (ja)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2019201522 2019-11-06
JP2019201522 2019-11-06
JP2019201524 2019-11-06
JP2019201524 2019-11-06
PCT/JP2020/041292 WO2021090861A1 (ja) 2019-11-06 2020-11-05 弾性波装置

Publications (3)

Publication Number Publication Date
JPWO2021090861A1 true JPWO2021090861A1 (ja) 2021-05-14
JPWO2021090861A5 JPWO2021090861A5 (ja) 2022-05-31
JP7380703B2 JP7380703B2 (ja) 2023-11-15

Family

ID=75849943

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021554959A Active JP7380703B2 (ja) 2019-11-06 2020-11-05 弾性波装置

Country Status (5)

Country Link
US (1) US20220255527A1 (ja)
JP (1) JP7380703B2 (ja)
KR (1) KR20220075403A (ja)
CN (1) CN114641931A (ja)
WO (1) WO2021090861A1 (ja)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN117013984B (zh) * 2023-08-21 2024-05-28 天通瑞宏科技有限公司 一种键合晶圆及薄膜声表面波器件

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08310900A (ja) * 1995-05-10 1996-11-26 Sumitomo Electric Ind Ltd 窒化物薄膜単結晶及びその製造方法
WO2011046117A1 (ja) * 2009-10-13 2011-04-21 株式会社村田製作所 弾性表面波装置
WO2013061926A1 (ja) * 2011-10-24 2013-05-02 株式会社村田製作所 弾性表面波装置
JP2019114986A (ja) * 2017-12-25 2019-07-11 株式会社村田製作所 弾性波装置
JP2019146143A (ja) * 2018-02-21 2019-08-29 住友金属鉱山株式会社 表面弾性波素子用複合基板とその製造方法

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007182335A (ja) 2006-01-05 2007-07-19 Toshiba Ceramics Co Ltd 単結晶薄膜およびその形成方法
JP2007228225A (ja) 2006-02-23 2007-09-06 Seiko Epson Corp 弾性表面波デバイス
KR101082201B1 (ko) 2009-01-09 2011-11-09 울산대학교 산학협력단 표면탄성파 소자
WO2012086639A1 (ja) 2010-12-24 2012-06-28 株式会社村田製作所 弾性波装置及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH08310900A (ja) * 1995-05-10 1996-11-26 Sumitomo Electric Ind Ltd 窒化物薄膜単結晶及びその製造方法
WO2011046117A1 (ja) * 2009-10-13 2011-04-21 株式会社村田製作所 弾性表面波装置
WO2013061926A1 (ja) * 2011-10-24 2013-05-02 株式会社村田製作所 弾性表面波装置
JP2019114986A (ja) * 2017-12-25 2019-07-11 株式会社村田製作所 弾性波装置
JP2019146143A (ja) * 2018-02-21 2019-08-29 住友金属鉱山株式会社 表面弾性波素子用複合基板とその製造方法

Also Published As

Publication number Publication date
CN114641931A (zh) 2022-06-17
JP7380703B2 (ja) 2023-11-15
KR20220075403A (ko) 2022-06-08
US20220255527A1 (en) 2022-08-11
WO2021090861A1 (ja) 2021-05-14

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