JPWO2021084902A1 - - Google Patents

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Publication number
JPWO2021084902A1
JPWO2021084902A1 JP2021554128A JP2021554128A JPWO2021084902A1 JP WO2021084902 A1 JPWO2021084902 A1 JP WO2021084902A1 JP 2021554128 A JP2021554128 A JP 2021554128A JP 2021554128 A JP2021554128 A JP 2021554128A JP WO2021084902 A1 JPWO2021084902 A1 JP WO2021084902A1
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JP
Japan
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Application number
JP2021554128A
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Japanese (ja)
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JPWO2021084902A5 (https=
JP7330284B2 (ja
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/19—Preparing inhomogeneous wafers
    • H10P90/1904—Preparing vertically inhomogeneous wafers
    • H10P90/1906—Preparing SOI wafers
    • H10P90/1914—Preparing SOI wafers using bonding
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0436—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/30—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations
    • H10P72/32—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations
    • H10P72/3212—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips or lead frames
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7448—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the bond interface between the auxiliary support and the wafer comprising two or more, e.g. multilayer adhesive or adhesive and release layer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/04—Planarisation of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/06—Planarisation of inorganic insulating materials
    • H10P95/062—Planarisation of inorganic insulating materials involving a dielectric removal step
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/01—Manufacture or treatment
    • H10W74/019—Manufacture or treatment using temporary auxiliary substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W74/00—Encapsulations, e.g. protective coatings
    • H10W74/10—Encapsulations, e.g. protective coatings characterised by their shape or disposition
    • H10W74/111—Encapsulations, e.g. protective coatings characterised by their shape or disposition the semiconductor body being completely enclosed
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7408—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support the auxiliary support including alignment aids
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7428—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used to support diced chips prior to mounting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/7434—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support used in a transfer process involving at least two transfer steps, i.e. including an intermediate handle substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/74—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using temporarily an auxiliary support
    • H10P72/744—Details of chemical or physical process used for separating the auxiliary support from a device or a wafer
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/791—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads
    • H10W90/794—Package configurations characterised by the relative positions of pads or connectors relative to package parts of direct-bonded pads between a chip and a stacked insulating package substrate, interposer or RDL

Landscapes

  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Manufacturing & Machinery (AREA)
  • Engineering & Computer Science (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Die Bonding (AREA)
JP2021554128A 2019-10-29 2020-09-03 チップ付き基板の製造方法、及び基板処理装置 Active JP7330284B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019196386 2019-10-29
JP2019196386 2019-10-29
PCT/JP2020/033410 WO2021084902A1 (ja) 2019-10-29 2020-09-03 チップ付き基板の製造方法、及び基板処理装置

Publications (3)

Publication Number Publication Date
JPWO2021084902A1 true JPWO2021084902A1 (https=) 2021-05-06
JPWO2021084902A5 JPWO2021084902A5 (https=) 2022-06-27
JP7330284B2 JP7330284B2 (ja) 2023-08-21

Family

ID=75714631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021554128A Active JP7330284B2 (ja) 2019-10-29 2020-09-03 チップ付き基板の製造方法、及び基板処理装置

Country Status (6)

Country Link
US (1) US12543522B2 (https=)
JP (1) JP7330284B2 (https=)
KR (2) KR102839966B1 (https=)
CN (2) CN121123034A (https=)
TW (1) TWI874441B (https=)
WO (1) WO2021084902A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI874441B (zh) * 2019-10-29 2025-03-01 日商東京威力科創股份有限公司 附有晶片之基板的製造方法及基板處理裝置
KR20240016994A (ko) * 2021-06-03 2024-02-06 도쿄엘렉트론가부시키가이샤 기판 처리 방법
JP7690038B2 (ja) * 2021-09-06 2025-06-09 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US12610845B2 (en) * 2022-04-22 2026-04-21 Tokyo Electron Limited Method for forming semiconductor packages using dielectric alignment marks and laser liftoff process
US20240178180A1 (en) * 2022-11-30 2024-05-30 Tokyo Electron Limited Systems and methods for bonding semiconductor devices
KR102853614B1 (ko) * 2024-08-07 2025-09-04 (주)에이치아이티에스 칩 본딩 방법

Citations (9)

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JPH04340251A (ja) * 1991-02-07 1992-11-26 Fujitsu Ltd 半導体装置の製造方法
JP2004288689A (ja) * 2003-03-19 2004-10-14 Matsushita Electric Ind Co Ltd 電子部品製造方法および電子部品の集合体の製造方法
JP2015046569A (ja) * 2013-07-31 2015-03-12 マイクロン テクノロジー， インク． 半導体装置の製造方法
WO2018003602A1 (ja) * 2016-06-28 2018-01-04 リンテック株式会社 整列治具、整列方法及び転着方法
WO2018157937A1 (de) * 2017-03-02 2018-09-07 Ev Group E. Thallner Gmbh Verfahren und vorrichtung zum bonden von chips
US20190035688A1 (en) * 2017-07-26 2019-01-31 Ultra Display Technology Corp. Method of batch transferring micro semiconductor structures
US20190081200A1 (en) * 2017-09-13 2019-03-14 PlayNitride Inc. Method of manufacturing micro light-emitting element array, transfer carrier, and micro light-emitting element array
WO2019098102A1 (ja) * 2017-11-16 2019-05-23 リンテック株式会社 半導体装置の製造方法
US20190276308A1 (en) * 2016-12-12 2019-09-12 Xiamen San'an Optoelectronics Co., Ltd. Transfer system and transfer method for microelements, manufacturing method for microelement device and microelement device made therefrom, and electronic apparatus including the microelement device

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JP4389447B2 (ja) * 2003-01-28 2009-12-24 セイコーエプソン株式会社 電気光学装置の製造方法
KR20070018713A (ko) * 2005-08-10 2007-02-14 가부시끼가이샤 르네사스 테크놀로지 반도체 장치의 제조 방법 및 반도체 장치
JP5389490B2 (ja) * 2009-03-23 2014-01-15 東京エレクトロン株式会社 三次元集積回路の製造方法及び装置
JP2011049210A (ja) 2009-08-25 2011-03-10 Seiko Epson Corp 薄膜素子群の転写方法
JP6149277B2 (ja) * 2011-03-30 2017-06-21 ボンドテック株式会社 電子部品実装方法、電子部品実装システムおよび基板
JP2013182972A (ja) 2012-03-01 2013-09-12 Tokyo Electron Ltd 基板の接合方法及び半導体装置
JP6008940B2 (ja) * 2012-03-13 2016-10-19 シチズンホールディングス株式会社 半導体発光装置及びその製造方法
JP6145061B2 (ja) * 2014-03-04 2017-06-07 東京エレクトロン株式会社 接合システムおよび接合方法
JP6300420B2 (ja) * 2014-09-26 2018-03-28 ルネサスエレクトロニクス株式会社 電子装置
US10403537B2 (en) * 2017-03-10 2019-09-03 Facebook Technologies, Llc Inorganic light emitting diode (ILED) assembly via direct bonding
JP6973927B2 (ja) * 2017-10-24 2021-12-01 株式会社ディスコ チップの製造方法
US10325791B1 (en) * 2017-12-13 2019-06-18 Facebook Technologies, Llc Formation of elastomeric layer on selective regions of light emitting device
US11227812B2 (en) * 2019-08-28 2022-01-18 Taiwan Semiconductor Manufacturing Company, Ltd. Package and manufacturing method thereof
US11264343B2 (en) * 2019-08-30 2022-03-01 Taiwan Semiconductor Manufacturing Co., Ltd. Bond pad structure for semiconductor device and method of forming same
US11557581B2 (en) * 2019-09-23 2023-01-17 Taiwan Semiconductor Manufacturing Company, Ltd. Package structure and method of fabricating the same
US12080672B2 (en) * 2019-09-26 2024-09-03 Adeia Semiconductor Bonding Technologies Inc. Direct gang bonding methods including directly bonding first element to second element to form bonded structure without adhesive
US11094672B2 (en) * 2019-09-27 2021-08-17 Intel Corporation Composite IC chips including a chiplet embedded within metallization layers of a host IC chip
TWI874441B (zh) * 2019-10-29 2025-03-01 日商東京威力科創股份有限公司 附有晶片之基板的製造方法及基板處理裝置
US11804469B2 (en) * 2020-05-07 2023-10-31 Invensas Llc Active bridging apparatus
US11631647B2 (en) * 2020-06-30 2023-04-18 Adeia Semiconductor Bonding Technologies Inc. Integrated device packages with integrated device die and dummy element
CN114597138A (zh) * 2020-12-03 2022-06-07 群创光电股份有限公司 半导体封装的制造方法
US12125820B2 (en) * 2021-02-12 2024-10-22 Taiwan Semiconductor Manufacturing Co., Ltd. Through-dielectric vias for direct connection and method forming same
US11664315B2 (en) * 2021-03-11 2023-05-30 Taiwan Semiconductor Manufacturing Company, Ltd. Structure with interconnection die and method of making same
JP2022170858A (ja) * 2021-04-30 2022-11-11 シャープ株式会社 マイクロｌｅｄ実装基板、マイクロｌｅｄディスプレイ及びマイクロｌｅｄ実装基板の製造方法

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04340251A (ja) * 1991-02-07 1992-11-26 Fujitsu Ltd 半導体装置の製造方法
JP2004288689A (ja) * 2003-03-19 2004-10-14 Matsushita Electric Ind Co Ltd 電子部品製造方法および電子部品の集合体の製造方法
JP2015046569A (ja) * 2013-07-31 2015-03-12 マイクロン テクノロジー， インク． 半導体装置の製造方法
WO2018003602A1 (ja) * 2016-06-28 2018-01-04 リンテック株式会社 整列治具、整列方法及び転着方法
US20190276308A1 (en) * 2016-12-12 2019-09-12 Xiamen San'an Optoelectronics Co., Ltd. Transfer system and transfer method for microelements, manufacturing method for microelement device and microelement device made therefrom, and electronic apparatus including the microelement device
WO2018157937A1 (de) * 2017-03-02 2018-09-07 Ev Group E. Thallner Gmbh Verfahren und vorrichtung zum bonden von chips
US20190035688A1 (en) * 2017-07-26 2019-01-31 Ultra Display Technology Corp. Method of batch transferring micro semiconductor structures
US20190081200A1 (en) * 2017-09-13 2019-03-14 PlayNitride Inc. Method of manufacturing micro light-emitting element array, transfer carrier, and micro light-emitting element array
WO2019098102A1 (ja) * 2017-11-16 2019-05-23 リンテック株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
TWI874441B (zh) 2025-03-01
US20220406603A1 (en) 2022-12-22
US12543522B2 (en) 2026-02-03
JP7330284B2 (ja) 2023-08-21
TW202135276A (zh) 2021-09-16
WO2021084902A1 (ja) 2021-05-06
CN121123034A (zh) 2025-12-12
CN114586135A (zh) 2022-06-03
KR20220091511A (ko) 2022-06-30
TW202522760A (zh) 2025-06-01
KR102839966B1 (ko) 2025-07-29
KR20250121140A (ko) 2025-08-11
CN114586135B (zh) 2025-09-30

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