JPWO2021084902A1 - - Google Patents

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Publication number
JPWO2021084902A1
JPWO2021084902A1 JP2021554128A JP2021554128A JPWO2021084902A1 JP WO2021084902 A1 JPWO2021084902 A1 JP WO2021084902A1 JP 2021554128 A JP2021554128 A JP 2021554128A JP 2021554128 A JP2021554128 A JP 2021554128A JP WO2021084902 A1 JPWO2021084902 A1 JP WO2021084902A1
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JP
Japan
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JP2021554128A
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Japanese (ja)
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JP7330284B2 (ja
JPWO2021084902A5 (enExample
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/26—Bombardment with radiation
    • H01L21/263—Bombardment with radiation with high-energy radiation
    • H01L21/268—Bombardment with radiation with high-energy radiation using electromagnetic radiation, e.g. laser radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/50—Multistep manufacturing processes of assemblies consisting of devices, the devices being individual devices of subclass H10D or integrated devices of class H10
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67703—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations
    • H01L21/67721—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations between different workstations the substrates to be conveyed not being semiconductor wafers or large planar substrates, e.g. chips, lead frames
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
    • H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
    • H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/03—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes
    • H01L25/04—Assemblies consisting of a plurality of semiconductor or other solid state devices all the devices being of a type provided for in a single subclass of subclasses H10B, H10D, H10F, H10H, H10K or H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L25/00—Assemblies consisting of a plurality of semiconductor or other solid state devices
    • H01L25/18—Assemblies consisting of a plurality of semiconductor or other solid state devices the devices being of the types provided for in two or more different main groups of the same subclass of H10B, H10D, H10F, H10H, H10K or H10N
    • H10P72/0428—
    • H10P72/74—
    • H10P90/1914—
    • H10P95/062—
    • H10W74/019—
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/07—Structure, shape, material or disposition of the bonding areas after the connecting process
    • H01L2224/08—Structure, shape, material or disposition of the bonding areas after the connecting process of an individual bonding area
    • H01L2224/081—Disposition
    • H01L2224/0812—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding
    • H01L2224/08151—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/08221—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/08225—Disposition the bonding area connecting directly to another bonding area, i.e. connectorless bonding, e.g. bumpless bonding the bonding area connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/96—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being encapsulated in a common layer, e.g. neo-wafer or pseudo-wafer, said common layer being separable into individual assemblies after connecting
    • H10P72/7408—
    • H10P72/7428—
    • H10P72/7434—
    • H10P72/744—

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Dicing (AREA)
  • Laser Beam Processing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Die Bonding (AREA)
JP2021554128A 2019-10-29 2020-09-03 チップ付き基板の製造方法、及び基板処理装置 Active JP7330284B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019196386 2019-10-29
JP2019196386 2019-10-29
PCT/JP2020/033410 WO2021084902A1 (ja) 2019-10-29 2020-09-03 チップ付き基板の製造方法、及び基板処理装置

Publications (3)

Publication Number Publication Date
JPWO2021084902A1 true JPWO2021084902A1 (enExample) 2021-05-06
JPWO2021084902A5 JPWO2021084902A5 (enExample) 2022-06-27
JP7330284B2 JP7330284B2 (ja) 2023-08-21

Family

ID=75714631

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021554128A Active JP7330284B2 (ja) 2019-10-29 2020-09-03 チップ付き基板の製造方法、及び基板処理装置

Country Status (6)

Country Link
US (1) US20220406603A1 (enExample)
JP (1) JP7330284B2 (enExample)
KR (2) KR20250121140A (enExample)
CN (2) CN114586135B (enExample)
TW (2) TWI874441B (enExample)
WO (1) WO2021084902A1 (enExample)

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20240016994A (ko) * 2021-06-03 2024-02-06 도쿄엘렉트론가부시키가이샤 기판 처리 방법
WO2023032833A1 (ja) * 2021-09-06 2023-03-09 東京エレクトロン株式会社 基板処理方法及び基板処理装置
US20230343606A1 (en) * 2022-04-22 2023-10-26 Tokyo Electron Limited Method for forming semiconductor packages using dielectric alignment marks and laser liftoff process
US20240178180A1 (en) * 2022-11-30 2024-05-30 Tokyo Electron Limited Systems and methods for bonding semiconductor devices
KR102853614B1 (ko) * 2024-08-07 2025-09-04 (주)에이치아이티에스 칩 본딩 방법

Citations (9)

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JPH04340251A (ja) * 1991-02-07 1992-11-26 Fujitsu Ltd 半導体装置の製造方法
JP2004288689A (ja) * 2003-03-19 2004-10-14 Matsushita Electric Ind Co Ltd 電子部品製造方法および電子部品の集合体の製造方法
JP2015046569A (ja) * 2013-07-31 2015-03-12 マイクロン テクノロジー， インク． 半導体装置の製造方法
WO2018003602A1 (ja) * 2016-06-28 2018-01-04 リンテック株式会社 整列治具、整列方法及び転着方法
WO2018157937A1 (de) * 2017-03-02 2018-09-07 Ev Group E. Thallner Gmbh Verfahren und vorrichtung zum bonden von chips
US20190035688A1 (en) * 2017-07-26 2019-01-31 Ultra Display Technology Corp. Method of batch transferring micro semiconductor structures
US20190081200A1 (en) * 2017-09-13 2019-03-14 PlayNitride Inc. Method of manufacturing micro light-emitting element array, transfer carrier, and micro light-emitting element array
WO2019098102A1 (ja) * 2017-11-16 2019-05-23 リンテック株式会社 半導体装置の製造方法
US20190276308A1 (en) * 2016-12-12 2019-09-12 Xiamen San'an Optoelectronics Co., Ltd. Transfer system and transfer method for microelements, manufacturing method for microelement device and microelement device made therefrom, and electronic apparatus including the microelement device

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JP5389490B2 (ja) * 2009-03-23 2014-01-15 東京エレクトロン株式会社 三次元集積回路の製造方法及び装置
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Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04340251A (ja) * 1991-02-07 1992-11-26 Fujitsu Ltd 半導体装置の製造方法
JP2004288689A (ja) * 2003-03-19 2004-10-14 Matsushita Electric Ind Co Ltd 電子部品製造方法および電子部品の集合体の製造方法
JP2015046569A (ja) * 2013-07-31 2015-03-12 マイクロン テクノロジー， インク． 半導体装置の製造方法
WO2018003602A1 (ja) * 2016-06-28 2018-01-04 リンテック株式会社 整列治具、整列方法及び転着方法
US20190276308A1 (en) * 2016-12-12 2019-09-12 Xiamen San'an Optoelectronics Co., Ltd. Transfer system and transfer method for microelements, manufacturing method for microelement device and microelement device made therefrom, and electronic apparatus including the microelement device
WO2018157937A1 (de) * 2017-03-02 2018-09-07 Ev Group E. Thallner Gmbh Verfahren und vorrichtung zum bonden von chips
US20190035688A1 (en) * 2017-07-26 2019-01-31 Ultra Display Technology Corp. Method of batch transferring micro semiconductor structures
US20190081200A1 (en) * 2017-09-13 2019-03-14 PlayNitride Inc. Method of manufacturing micro light-emitting element array, transfer carrier, and micro light-emitting element array
WO2019098102A1 (ja) * 2017-11-16 2019-05-23 リンテック株式会社 半導体装置の製造方法

Also Published As

Publication number Publication date
JP7330284B2 (ja) 2023-08-21
TW202522760A (zh) 2025-06-01
WO2021084902A1 (ja) 2021-05-06
KR20250121140A (ko) 2025-08-11
CN114586135A (zh) 2022-06-03
CN121123034A (zh) 2025-12-12
US20220406603A1 (en) 2022-12-22
KR102839966B1 (ko) 2025-07-29
KR20220091511A (ko) 2022-06-30
CN114586135B (zh) 2025-09-30
TWI874441B (zh) 2025-03-01
TW202135276A (zh) 2021-09-16

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