JPWO2021070007A1 - - Google Patents
Info
- Publication number
- JPWO2021070007A1 JPWO2021070007A1 JP2021550723A JP2021550723A JPWO2021070007A1 JP WO2021070007 A1 JPWO2021070007 A1 JP WO2021070007A1 JP 2021550723 A JP2021550723 A JP 2021550723A JP 2021550723 A JP2021550723 A JP 2021550723A JP WO2021070007 A1 JPWO2021070007 A1 JP WO2021070007A1
- Authority
- JP
- Japan
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/674—Thin-film transistors [TFT] characterised by the active materials
- H10D30/6755—Oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/20—Electrodes characterised by their shapes, relative sizes or dispositions
- H10D64/27—Electrodes not carrying the current to be rectified, amplified, oscillated or switched, e.g. gates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D64/00—Electrodes of devices having potential barriers
- H10D64/60—Electrodes characterised by their materials
- H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/421—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer
- H10D86/423—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs having a particular composition, shape or crystalline structure of the active layer comprising semiconductor materials not belonging to the Group IV, e.g. InGaZnO
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/481—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs integrated with passive devices, e.g. auxiliary capacitors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates
- H10D86/40—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs
- H10D86/60—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates characterised by multiple TFTs wherein the TFTs are in active matrices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D87/00—Integrated devices comprising both bulk components and either SOI or SOS components on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
- H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
- H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/01—Manufacture or treatment
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W20/00—Interconnections in chips, wafers or substrates
- H10W20/40—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes
- H10W20/45—Interconnections external to wafers or substrates, e.g. back-end-of-line [BEOL] metallisations or vias connecting to gate electrodes characterised by their insulating parts
- H10W20/48—Insulating materials thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
- H10B41/70—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates the floating gate being an electrode shared by two or more components
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/01—Manufacture or treatment
- H10D84/02—Manufacture or treatment characterised by using material-based technologies
- H10D84/08—Manufacture or treatment characterised by using material-based technologies using combinations of technologies, e.g. using both Si and SiC technologies or using both Si and Group III-V technologies
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D88/00—Three-dimensional [3D] integrated devices
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2025196433A JP2026027469A (ja) | 2019-10-11 | 2025-11-17 | 半導体装置 |
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019187495 | 2019-10-11 | ||
| JP2019226701 | 2019-12-16 | ||
| PCT/IB2020/059121 WO2021070007A1 (ja) | 2019-10-11 | 2020-09-30 | 半導体装置 |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025196433A Division JP2026027469A (ja) | 2019-10-11 | 2025-11-17 | 半導体装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPWO2021070007A1 true JPWO2021070007A1 (https=) | 2021-04-15 |
| JPWO2021070007A5 JPWO2021070007A5 (https=) | 2023-10-06 |
Family
ID=75436802
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021550723A Withdrawn JPWO2021070007A1 (https=) | 2019-10-11 | 2020-09-30 | |
| JP2025196433A Pending JP2026027469A (ja) | 2019-10-11 | 2025-11-17 | 半導体装置 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2025196433A Pending JP2026027469A (ja) | 2019-10-11 | 2025-11-17 | 半導体装置 |
Country Status (3)
| Country | Link |
|---|---|
| US (2) | US12477837B2 (https=) |
| JP (2) | JPWO2021070007A1 (https=) |
| WO (1) | WO2021070007A1 (https=) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7710994B2 (ja) | 2019-12-27 | 2025-07-22 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| TW202349459A (zh) * | 2022-04-15 | 2023-12-16 | 日商半導體能源研究所股份有限公司 | 疊層體的製造方法及半導體裝置的製造方法 |
Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007073698A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | トランジスタ |
| WO2009075161A1 (ja) * | 2007-12-12 | 2009-06-18 | Idemitsu Kosan Co., Ltd. | パターン化結晶質半導体薄膜、薄膜トランジスタの製造方法、及び電界効果型トランジスタ |
| JP2012038906A (ja) * | 2010-08-06 | 2012-02-23 | Fujitsu Semiconductor Ltd | 半導体装置とその製造方法 |
| JP2013084941A (ja) * | 2011-09-26 | 2013-05-09 | Semiconductor Energy Lab Co Ltd | 半導体装置、および半導体装置の作製方法 |
| JP2015144265A (ja) * | 2013-12-27 | 2015-08-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2016111352A (ja) * | 2014-11-28 | 2016-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置、モジュールおよび電子機器 |
| JP2016225585A (ja) * | 2015-05-26 | 2016-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2017199901A (ja) * | 2016-04-22 | 2017-11-02 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| WO2019102296A1 (ja) * | 2017-11-23 | 2019-05-31 | 株式会社半導体エネルギー研究所 | 撮像装置、および電子機器 |
| WO2019171196A1 (ja) * | 2018-03-07 | 2019-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
Family Cites Families (30)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR101870119B1 (ko) | 2009-12-25 | 2018-06-25 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 |
| CN107947763B (zh) | 2010-08-06 | 2021-12-28 | 株式会社半导体能源研究所 | 半导体集成电路 |
| US8952377B2 (en) | 2011-07-08 | 2015-02-10 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| KR101976212B1 (ko) | 2011-10-24 | 2019-05-07 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| US8796682B2 (en) | 2011-11-11 | 2014-08-05 | Semiconductor Energy Laboratory Co., Ltd. | Method for manufacturing a semiconductor device |
| JP6142331B2 (ja) * | 2013-04-19 | 2017-06-07 | 株式会社Ｊｏｌｅｄ | 薄膜半導体装置、有機ｅｌ表示装置、及びそれらの製造方法 |
| US20150287831A1 (en) | 2014-04-08 | 2015-10-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and electronic device including semiconductor device |
| KR102549926B1 (ko) | 2015-05-04 | 2023-06-29 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치, 반도체 장치의 제작 방법, 및 전자기기 |
| JP6717815B2 (ja) | 2015-05-28 | 2020-07-08 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| US20170084643A1 (en) * | 2015-09-17 | 2017-03-23 | Intermolecular, Inc. | Storage Capacitors for Displays and Methods for Forming the Same |
| US10741587B2 (en) * | 2016-03-11 | 2020-08-11 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device, semiconductor wafer, module, electronic device, and manufacturing method the same |
| WO2017175095A1 (en) * | 2016-04-08 | 2017-10-12 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method thereof |
| JP6968567B2 (ja) | 2016-04-22 | 2021-11-17 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| KR20180134919A (ko) | 2016-04-22 | 2018-12-19 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| WO2018051208A1 (en) | 2016-09-14 | 2018-03-22 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of the same |
| US20200243685A1 (en) | 2017-03-09 | 2020-07-30 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and manufacturing method of semiconductor device |
| CN110402497B (zh) | 2017-03-29 | 2024-08-06 | 株式会社半导体能源研究所 | 半导体装置、半导体装置的制造方法 |
| WO2018197988A1 (ja) | 2017-04-28 | 2018-11-01 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JPWO2018224912A1 (ja) * | 2017-06-08 | 2020-06-25 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US11195758B2 (en) | 2017-09-05 | 2021-12-07 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and method for manufacturing semiconductor device having plurality of insulator |
| KR102579972B1 (ko) | 2017-09-05 | 2023-09-20 | 가부시키가이샤 한도오따이 에네루기 켄큐쇼 | 반도체 장치 및 반도체 장치의 제작 방법 |
| WO2019053573A1 (ja) * | 2017-09-15 | 2019-03-21 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JP2019087677A (ja) | 2017-11-08 | 2019-06-06 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| JP7229669B2 (ja) | 2017-11-17 | 2023-02-28 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US11495690B2 (en) * | 2018-02-23 | 2022-11-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device and fabrication method of semiconductor device |
| WO2019166906A1 (ja) * | 2018-02-28 | 2019-09-06 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US11031506B2 (en) * | 2018-08-31 | 2021-06-08 | Semiconductor Energy Laboratory Co., Ltd. | Semiconductor device including transistor using oxide semiconductor |
| WO2020049425A1 (ja) * | 2018-09-05 | 2020-03-12 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
| WO2020070580A1 (ja) * | 2018-10-05 | 2020-04-09 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
| US12278291B2 (en) * | 2018-12-07 | 2025-04-15 | Semiconductor Energy Laboratory Co., Ltd. | Thin film transistor array having a stacked multi-layer metal oxide channel formation region |
-
2020
- 2020-09-30 WO PCT/IB2020/059121 patent/WO2021070007A1/ja not_active Ceased
- 2020-09-30 US US17/641,569 patent/US12477837B2/en active Active
- 2020-09-30 JP JP2021550723A patent/JPWO2021070007A1/ja not_active Withdrawn
-
2025
- 2025-10-15 US US19/358,666 patent/US20260040693A1/en active Pending
- 2025-11-17 JP JP2025196433A patent/JP2026027469A/ja active Pending
Patent Citations (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007073698A (ja) * | 2005-09-06 | 2007-03-22 | Canon Inc | トランジスタ |
| WO2009075161A1 (ja) * | 2007-12-12 | 2009-06-18 | Idemitsu Kosan Co., Ltd. | パターン化結晶質半導体薄膜、薄膜トランジスタの製造方法、及び電界効果型トランジスタ |
| JP2012038906A (ja) * | 2010-08-06 | 2012-02-23 | Fujitsu Semiconductor Ltd | 半導体装置とその製造方法 |
| JP2013084941A (ja) * | 2011-09-26 | 2013-05-09 | Semiconductor Energy Lab Co Ltd | 半導体装置、および半導体装置の作製方法 |
| JP2015144265A (ja) * | 2013-12-27 | 2015-08-06 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2016111352A (ja) * | 2014-11-28 | 2016-06-20 | 株式会社半導体エネルギー研究所 | 半導体装置、モジュールおよび電子機器 |
| JP2016225585A (ja) * | 2015-05-26 | 2016-12-28 | 株式会社半導体エネルギー研究所 | 半導体装置 |
| JP2017199901A (ja) * | 2016-04-22 | 2017-11-02 | 株式会社半導体エネルギー研究所 | 半導体装置、及び半導体装置の作製方法 |
| WO2019102296A1 (ja) * | 2017-11-23 | 2019-05-31 | 株式会社半導体エネルギー研究所 | 撮像装置、および電子機器 |
| WO2019171196A1 (ja) * | 2018-03-07 | 2019-09-12 | 株式会社半導体エネルギー研究所 | 半導体装置、および半導体装置の作製方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2021070007A1 (ja) | 2021-04-15 |
| JP2026027469A (ja) | 2026-02-18 |
| US12477837B2 (en) | 2025-11-18 |
| US20260040693A1 (en) | 2026-02-05 |
| US20220416059A1 (en) | 2022-12-29 |
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