JPWO2021015122A5 - - Google Patents
Download PDFInfo
- Publication number
- JPWO2021015122A5 JPWO2021015122A5 JP2021534001A JP2021534001A JPWO2021015122A5 JP WO2021015122 A5 JPWO2021015122 A5 JP WO2021015122A5 JP 2021534001 A JP2021534001 A JP 2021534001A JP 2021534001 A JP2021534001 A JP 2021534001A JP WO2021015122 A5 JPWO2021015122 A5 JP WO2021015122A5
- Authority
- JP
- Japan
- Prior art keywords
- interface
- layer
- bonding
- substrate
- bonded substrate
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 55
- 239000010949 copper Substances 0.000 claims description 36
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 35
- 229910052802 copper Inorganic materials 0.000 claims description 35
- 239000000919 ceramic Substances 0.000 claims description 19
- 239000010936 titanium Substances 0.000 claims description 13
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 11
- 229910052719 titanium Inorganic materials 0.000 claims description 11
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 10
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- 229910052709 silver Inorganic materials 0.000 claims description 7
- 239000004332 silver Substances 0.000 claims description 7
- 239000013067 intermediate product Substances 0.000 claims description 5
- 229910052757 nitrogen Inorganic materials 0.000 claims description 5
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims 23
- 239000002184 metal Substances 0.000 claims 23
- 229910052581 Si3N4 Inorganic materials 0.000 claims 10
- 238000005219 brazing Methods 0.000 claims 10
- 239000000945 filler Substances 0.000 claims 10
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims 10
- 238000004519 manufacturing process Methods 0.000 claims 6
- 238000000034 method Methods 0.000 claims 6
- 239000000203 mixture Substances 0.000 claims 6
- 239000002105 nanoparticle Substances 0.000 claims 6
- 150000004767 nitrides Chemical class 0.000 claims 4
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 claims 3
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 claims 3
- 239000002245 particle Substances 0.000 claims 3
- 239000000047 product Substances 0.000 claims 3
- 229910052726 zirconium Inorganic materials 0.000 claims 3
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 2
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000009826 distribution Methods 0.000 claims 1
- 238000010438 heat treatment Methods 0.000 claims 1
- 150000004678 hydrides Chemical class 0.000 claims 1
- 239000000463 material Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 239000000843 powder Substances 0.000 claims 1
- 239000006104 solid solution Substances 0.000 claims 1
- 238000005530 etching Methods 0.000 description 6
- 238000013507 mapping Methods 0.000 description 6
- 239000007864 aqueous solution Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 3
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 2
- 229910052799 carbon Inorganic materials 0.000 description 2
- ORTQZVOHEJQUHG-UHFFFAOYSA-L copper(II) chloride Chemical compound Cl[Cu]Cl ORTQZVOHEJQUHG-UHFFFAOYSA-L 0.000 description 2
- 238000002149 energy-dispersive X-ray emission spectroscopy Methods 0.000 description 2
- FBAFATDZDUQKNH-UHFFFAOYSA-M iron chloride Chemical compound [Cl-].[Fe] FBAFATDZDUQKNH-UHFFFAOYSA-M 0.000 description 2
- 238000000851 scanning transmission electron micrograph Methods 0.000 description 2
- DDFHBQSCUXNBSA-UHFFFAOYSA-N 5-(5-carboxythiophen-2-yl)thiophene-2-carboxylic acid Chemical compound S1C(C(=O)O)=CC=C1C1=CC=C(C(O)=O)S1 DDFHBQSCUXNBSA-UHFFFAOYSA-N 0.000 description 1
- 238000012790 confirmation Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
Images
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2019028876 | 2019-07-23 | ||
| JPPCT/JP2019/028876 | 2019-07-23 | ||
| PCT/JP2020/027829 WO2021015122A1 (ja) | 2019-07-23 | 2020-07-17 | 接合基板および接合基板の製造方法 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JPWO2021015122A1 JPWO2021015122A1 (https=) | 2021-01-28 |
| JPWO2021015122A5 true JPWO2021015122A5 (https=) | 2022-02-21 |
| JP7197703B2 JP7197703B2 (ja) | 2022-12-27 |
Family
ID=74193226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2021534001A Active JP7197703B2 (ja) | 2019-07-23 | 2020-07-17 | 接合基板および接合基板の製造方法 |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US12165948B2 (https=) |
| EP (1) | EP4006002A4 (https=) |
| JP (1) | JP7197703B2 (https=) |
| WO (1) | WO2021015122A1 (https=) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP4227284A4 (en) * | 2020-10-07 | 2025-09-03 | Toshiba Kk | BONDED BODY, CERAMIC CIRCUIT SUBSTRATE AND SEMICONDUCTOR DEVICE |
| JP7760851B2 (ja) * | 2021-07-16 | 2025-10-28 | 三菱マテリアル株式会社 | 銅／セラミックス接合体、および、絶縁回路基板 |
| DE112024000777T5 (de) * | 2023-02-07 | 2025-11-20 | Mitsubishi Materials Corporation | Metall/nitrid-laminat und isolierendes schaltungssubstrat |
| CN120770069A (zh) * | 2023-02-24 | 2025-10-10 | 电化株式会社 | 电路基板的制造方法、电路基板以及电源模块 |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP3539634B2 (ja) | 2000-10-26 | 2004-07-07 | 日立金属株式会社 | 回路搭載用窒化ケイ素基板および回路基板 |
| JP4997431B2 (ja) * | 2006-01-24 | 2012-08-08 | 独立行政法人産業技術総合研究所 | 高熱伝導窒化ケイ素基板の製造方法 |
| US9012783B2 (en) * | 2009-05-27 | 2015-04-21 | Kyocera Corporation | Heat dissipation base and electronic device |
| CN104011852B (zh) | 2011-12-20 | 2016-12-21 | 株式会社东芝 | 陶瓷铜电路基板和使用了陶瓷铜电路基板的半导体装置 |
| JP6182903B2 (ja) * | 2012-02-28 | 2017-08-23 | 日立金属株式会社 | セラミック回路基板の製造方法 |
| JP6319643B2 (ja) * | 2012-02-29 | 2018-05-09 | 日立金属株式会社 | セラミックス−銅接合体およびその製造方法 |
| JP6499545B2 (ja) * | 2015-08-07 | 2019-04-10 | Ｊｘ金属株式会社 | 金属セラミック接合基板及び、その製造方法 |
| EP3398205B1 (en) | 2015-12-28 | 2019-10-30 | NGK Insulators, Ltd. | Bonded substrate and method for manufacturing bonded substrate |
-
2020
- 2020-07-17 WO PCT/JP2020/027829 patent/WO2021015122A1/ja not_active Ceased
- 2020-07-17 JP JP2021534001A patent/JP7197703B2/ja active Active
- 2020-07-17 EP EP20843472.0A patent/EP4006002A4/en active Pending
-
2021
- 2021-12-10 US US17/547,379 patent/US12165948B2/en active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPWO2021015122A5 (https=) | ||
| JP7471376B2 (ja) | 回路基板及び半導体装置 | |
| KR102324373B1 (ko) | 방열판 및 그 제조 방법 | |
| US20220216124A1 (en) | Heat conductor, heat-conducting material, and package structure of semiconductor device | |
| JP7289911B2 (ja) | 接合基板及び接合基板の製造方法 | |
| CN103681542B (zh) | 芯片封装和用于制作芯片封装的方法 | |
| KR20130135965A (ko) | 세라믹스 회로 기판 | |
| JP2005303012A (ja) | 半導体発光素子搭載部材と、それを用いた半導体発光装置 | |
| US20130098867A1 (en) | Method for Selective Metallization on a Ceramic Substrate | |
| CN111742073B (zh) | 复合材料和复合材料的制造方法 | |
| US11594504B2 (en) | Nickel alloy for semiconductor packaging | |
| US12165948B2 (en) | Bonded substrate, and method for manufacturing bonded substrate | |
| JP7695557B2 (ja) | 複合材料の製造方法 | |
| JP7453288B2 (ja) | 接合基板の製造方法 | |
| JP2012158783A (ja) | アルミニウム−ダイヤモンド系複合体及びその製造方法 | |
| JP6441915B2 (ja) | 半導体パッケージ及びその製造方法 | |
| CN106995896A (zh) | 一种金刚石颗粒增强金属基复合材料的金属化方法及结构 | |
| JP2008263248A (ja) | 半導体発光素子搭載部材およびその製造方法 | |
| JPWO2020084903A1 (ja) | 複合部材 | |
| JP2014038920A (ja) | 半導体発光素子 | |
| US8378357B2 (en) | Multilayered structures and methods of making multilayered structures | |
| JP6038564B2 (ja) | 半導体積層体接合用基板およびその製造方法 | |
| JP7623500B2 (ja) | 放熱部材および電子装置 | |
| JP2016149448A (ja) | 半導体装置 | |
| JP7538845B2 (ja) | 積層体、及び、パワーモジュール |