JPWO2020230668A1 - - Google Patents

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Publication number
JPWO2020230668A1
JPWO2020230668A1 JP2021519382A JP2021519382A JPWO2020230668A1 JP WO2020230668 A1 JPWO2020230668 A1 JP WO2020230668A1 JP 2021519382 A JP2021519382 A JP 2021519382A JP 2021519382 A JP2021519382 A JP 2021519382A JP WO2020230668 A1 JPWO2020230668 A1 JP WO2020230668A1
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JP
Japan
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JP2021519382A
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Japanese (ja)
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JPWO2020230668A5 (https=
JP7432845B2 (ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/813—Bodies having a plurality of light-emitting regions, e.g. multi-junction LEDs or light-emitting devices having photoluminescent regions within the bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H10H20/841—Reflective coatings, e.g. dielectric Bragg reflectors
    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/826—Materials of the light-emitting regions comprising only Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/034—Manufacture or treatment of coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0361—Manufacture or treatment of packages of wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/036—Manufacture or treatment of packages
    • H10H20/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/10—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00
    • H10H29/14—Integrated devices comprising at least one light-emitting semiconductor component covered by group H10H20/00 comprising multiple light-emitting semiconductor components
    • H10H29/142—Two-dimensional arrangements, e.g. asymmetric LED layout

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Theoretical Computer Science (AREA)
  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
JP2021519382A 2019-05-10 2020-05-01 画像表示装置の製造方法および画像表示装置 Active JP7432845B2 (ja)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019090020 2019-05-10
JP2019090020 2019-05-10
PCT/JP2020/018398 WO2020230668A1 (ja) 2019-05-10 2020-05-01 画像表示装置の製造方法および画像表示装置

Publications (3)

Publication Number Publication Date
JPWO2020230668A1 true JPWO2020230668A1 (https=) 2020-11-19
JPWO2020230668A5 JPWO2020230668A5 (https=) 2023-04-20
JP7432845B2 JP7432845B2 (ja) 2024-02-19

Family

ID=73289106

Family Applications (1)

Application Number Title Priority Date Filing Date
JP2021519382A Active JP7432845B2 (ja) 2019-05-10 2020-05-01 画像表示装置の製造方法および画像表示装置

Country Status (6)

Country Link
US (2) US12255276B2 (https=)
JP (1) JP7432845B2 (https=)
KR (1) KR102804328B1 (https=)
CN (1) CN113994486A (https=)
TW (1) TWI841730B (https=)
WO (1) WO2020230668A1 (https=)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7479164B2 (ja) * 2020-02-27 2024-05-08 株式会社ジャパンディスプレイ 表示装置
CN117882126A (zh) * 2021-08-24 2024-04-12 株式会社日本显示器 发光装置及发光装置形成基板
CN115188752B (zh) * 2022-06-30 2025-12-05 湖北长江新型显示产业创新中心有限公司 显示面板、显示装置及控制方法
WO2025206044A1 (ja) * 2024-03-27 2025-10-02 ソニーセミコンダクタソリューションズ株式会社 発光装置および画像表示装置
CN118712313A (zh) * 2024-05-30 2024-09-27 京东方华灿光电(浙江)有限公司 发光器件、显示阵列及其制备方法
CN118969934B (zh) * 2024-07-02 2025-11-18 厦门三安光电有限公司 一种发光二极管及发光装置

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JP2008135419A (ja) * 2006-10-27 2008-06-12 Canon Inc 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ
JP2013037139A (ja) * 2011-08-05 2013-02-21 Panasonic Corp 自発光型表示装置
US20180174519A1 (en) * 2016-12-19 2018-06-21 Lg Display Co., Ltd. Light emitting diode display device
US20190074324A1 (en) * 2017-09-05 2019-03-07 Samsung Electronics Co., Ltd. Display device including light emitting diode and method of manufacturing the same

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JP2002141492A (ja) 2000-10-31 2002-05-17 Canon Inc 発光ダイオードディスプレイパネル及びその製造方法
JP3681992B2 (ja) 2001-06-13 2005-08-10 日本電信電話株式会社 半導体集積回路の製造方法
WO2005093838A1 (en) 2004-03-24 2005-10-06 Koninklijke Philips Electronics N.V. Electroluminescent display devices
JP2007109868A (ja) * 2005-10-13 2007-04-26 Sanyo Electric Co Ltd 薄膜トランジスタ及び有機エレクトロルミネッセンス表示装置
JP2007188936A (ja) * 2006-01-11 2007-07-26 Epson Imaging Devices Corp 表示装置
JP2008147608A (ja) 2006-10-27 2008-06-26 Canon Inc Ｌｅｄアレイの製造方法とｌｅｄアレイ、及びｌｅｄプリンタ
JP2009094144A (ja) * 2007-10-04 2009-04-30 Canon Inc 発光素子の製造方法
KR101657957B1 (ko) * 2008-09-12 2016-09-20 가부시키가이샤 한도오따이 에네루기 켄큐쇼 표시 장치
US8987765B2 (en) 2013-06-17 2015-03-24 LuxVue Technology Corporation Reflective bank structure and method for integrating a light emitting device
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JP2016139560A (ja) 2015-01-28 2016-08-04 株式会社ジャパンディスプレイ 表示装置
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JP7079940B2 (ja) * 2017-01-13 2022-06-03 マサチューセッツ インスティテュート オブ テクノロジー ピクセル化ディスプレイ用多層構造体を形成する方法およびピクセル化ディスプレイ用多層構造体
KR102370621B1 (ko) * 2017-08-24 2022-03-04 삼성전자주식회사 발광 패키지 및 이를 포함하는 발광 모듈
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JP7079106B2 (ja) 2018-01-24 2022-06-01 シャープ株式会社 画像表示素子、及び画像表示素子の製造方法
US10748879B2 (en) 2018-02-28 2020-08-18 Sharp Kabushiki Kaisha Image display device and display
CN108615740B (zh) 2018-05-26 2020-11-10 矽照光电（厦门）有限公司 柔性有源彩色半导体发光显示模块及柔性显示屏

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JP2008135419A (ja) * 2006-10-27 2008-06-12 Canon Inc 半導体部材、半導体物品の製造方法、その製造方法を用いたｌｅｄアレイ
JP2013037139A (ja) * 2011-08-05 2013-02-21 Panasonic Corp 自発光型表示装置
US20180174519A1 (en) * 2016-12-19 2018-06-21 Lg Display Co., Ltd. Light emitting diode display device
US20190074324A1 (en) * 2017-09-05 2019-03-07 Samsung Electronics Co., Ltd. Display device including light emitting diode and method of manufacturing the same

Also Published As

Publication number Publication date
KR20220007044A (ko) 2022-01-18
US12255276B2 (en) 2025-03-18
US20220069188A1 (en) 2022-03-03
WO2020230668A1 (ja) 2020-11-19
CN113994486A (zh) 2022-01-28
KR102804328B1 (ko) 2025-05-07
JP7432845B2 (ja) 2024-02-19
US20250194315A1 (en) 2025-06-12
TW202114200A (zh) 2021-04-01
TWI841730B (zh) 2024-05-11

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