JPWO2020196271A1 - - Google Patents

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Publication number
JPWO2020196271A1
JPWO2020196271A1 JP2021509314A JP2021509314A JPWO2020196271A1 JP WO2020196271 A1 JPWO2020196271 A1 JP WO2020196271A1 JP 2021509314 A JP2021509314 A JP 2021509314A JP 2021509314 A JP2021509314 A JP 2021509314A JP WO2020196271 A1 JPWO2020196271 A1 JP WO2020196271A1
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JP
Japan
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JP2021509314A
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Japanese (ja)
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JP7507373B2 (ja
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Priority to JP2024061506A priority Critical patent/JP7594231B2/ja
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Publication of JP7507373B2 publication Critical patent/JP7507373B2/ja
Active legal-status Critical Current
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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/018—Bonding of wafers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
    • H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
    • H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
    • H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
    • H10F30/225—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier working in avalanche mode, e.g. avalanche photodiodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0133—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials
    • H10H20/01335—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials with a substrate not being Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/01—Manufacture or treatment
    • H10H20/011—Manufacture or treatment of bodies, e.g. forming semiconductor layers
    • H10H20/013—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials
    • H10H20/0137—Manufacture or treatment of bodies, e.g. forming semiconductor layers having light-emitting regions comprising only Group III-V materials the light-emitting regions comprising nitride materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
    • H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • H10H20/833—Transparent materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/851—Wavelength conversion means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/857—Interconnections, e.g. lead-frames, bond wires or solder balls
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/012—Manufacture or treatment of active-matrix LED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/036—Manufacture or treatment of packages
    • H10H29/0364—Manufacture or treatment of packages of interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H10H29/39—Connection of the pixel electrodes to the driving transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/30—Active-matrix LED displays
    • H10H29/41—Insulating layers formed between the driving transistors and the LEDs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/35—Devices specially adapted for multicolour light emission comprising red-green-blue [RGB] subpixels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/30—Devices specially adapted for multicolour light emission
    • H10K59/38—Devices specially adapted for multicolour light emission comprising colour filters or colour changing media [CCM]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00—Package configurations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H10H20/825—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP containing nitrogen, e.g. GaN
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/032—Manufacture or treatment of electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H29/00—Integrated devices, or assemblies of multiple devices, comprising at least one light-emitting semiconductor element covered by group H10H20/00
    • H10H29/01—Manufacture or treatment
    • H10H29/034—Manufacture or treatment of coatings

Landscapes

  • Devices For Indicating Variable Information By Combining Individual Elements (AREA)
  • Electroluminescent Light Sources (AREA)
  • Led Device Packages (AREA)
  • Led Devices (AREA)
JP2021509314A 2019-03-22 2020-03-19 画像表示装置の製造方法および画像表示装置 Active JP7507373B2 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2024061506A JP7594231B2 (ja) 2019-03-22 2024-04-05 画像表示装置の製造方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2019055382 2019-03-22
JP2019055382 2019-03-22
PCT/JP2020/012313 WO2020196271A1 (ja) 2019-03-22 2020-03-19 画像表示装置の製造方法および画像表示装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP2024061506A Division JP7594231B2 (ja) 2019-03-22 2024-04-05 画像表示装置の製造方法

Publications (2)

Publication Number Publication Date
JPWO2020196271A1 true JPWO2020196271A1 (https=) 2020-10-01
JP7507373B2 JP7507373B2 (ja) 2024-06-28

Family

ID=72514662

Family Applications (2)

Application Number Title Priority Date Filing Date
JP2021509314A Active JP7507373B2 (ja) 2019-03-22 2020-03-19 画像表示装置の製造方法および画像表示装置
JP2024061506A Active JP7594231B2 (ja) 2019-03-22 2024-04-05 画像表示装置の製造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
JP2024061506A Active JP7594231B2 (ja) 2019-03-22 2024-04-05 画像表示装置の製造方法

Country Status (7)

Country Link
US (2) US11476308B2 (https=)
EP (1) EP3944343B1 (https=)
JP (2) JP7507373B2 (https=)
KR (1) KR102816943B1 (https=)
CN (1) CN113439343A (https=)
TW (1) TWI839491B (https=)
WO (1) WO2020196271A1 (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7647012B2 (ja) 2020-06-18 2025-03-18 日亜化学工業株式会社 画像表示装置の製造方法および画像表示装置
KR20220077207A (ko) * 2020-11-30 2022-06-09 삼성디스플레이 주식회사 표시 장치 및 그 제조 방법
JP7782462B2 (ja) * 2020-12-11 2025-12-09 ソニーグループ株式会社 発光装置の製造方法
US20230187591A1 (en) * 2021-12-15 2023-06-15 Meta Platforms Technologies, Llc P-side-up micro-leds
TWI852561B (zh) * 2023-05-17 2024-08-11 國立清華大學 全無機上轉換顯示器
KR20250001025A (ko) 2023-06-27 2025-01-06 삼성디스플레이 주식회사 화소 및 이를 구비하는 표시 장치
TWI880562B (zh) * 2023-12-29 2025-04-11 南韓商樂金顯示科技股份有限公司 顯示裝置

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US20090078963A1 (en) * 2007-07-09 2009-03-26 Salah Khodja Nano-optoelectronic chip structure and method
JP2009094144A (ja) * 2007-10-04 2009-04-30 Canon Inc 発光素子の製造方法
JP2014072215A (ja) * 2012-09-27 2014-04-21 Sharp Corp 表示装置
JP2018101785A (ja) * 2016-12-20 2018-06-28 エルジー ディスプレイ カンパニー リミテッド 発光ダイオードチップ及びこれを含む発光ダイオードディスプレイ装置
WO2018132070A1 (en) * 2017-01-13 2018-07-19 Massachusetts Institute Of Technology A method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display
JP2018205456A (ja) * 2017-06-01 2018-12-27 株式会社ブイ・テクノロジー フルカラーｌｅｄ表示パネル

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JP3681992B2 (ja) 2001-06-13 2005-08-10 日本電信電話株式会社 半導体集積回路の製造方法
JP4887587B2 (ja) 2001-08-01 2012-02-29 ソニー株式会社 画像表示装置及びその製造方法
EP1488456B1 (en) 2002-03-20 2013-01-16 TPO Hong Kong Holding Limited Active matrix display devices, and their manufacture
JP2004304161A (ja) 2003-03-14 2004-10-28 Sony Corp 発光素子、発光装置、画像表示装置、発光素子の製造方法及び画像表示装置の製造方法
JP2008147608A (ja) 2006-10-27 2008-06-26 Canon Inc Ｌｅｄアレイの製造方法とｌｅｄアレイ、及びｌｅｄプリンタ
JP4827698B2 (ja) 2006-10-27 2011-11-30 キヤノン株式会社 発光素子の形成方法
WO2008155940A1 (ja) 2007-06-20 2008-12-24 Kyocera Corporation 発光装置およびその製造方法ならびに画像形成装置
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US9093356B2 (en) 2010-12-28 2015-07-28 Nichia Corporation Semiconductor light emitting element
TWI635330B (zh) * 2014-01-14 2018-09-11 美國麻省理工學院 用於形成積體電路之方法及相關積體電路
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KR101902566B1 (ko) 2017-07-25 2018-09-28 엘지디스플레이 주식회사 발광 표시 장치 및 이의 제조 방법
JP6798952B2 (ja) 2017-08-31 2020-12-09 京セラ株式会社 半導体装置、発光装置および半導体装置の製造方法
WO2019049360A1 (ja) 2017-09-11 2019-03-14 凸版印刷株式会社 表示装置及び表示装置基板
JP6975603B2 (ja) 2017-09-27 2021-12-01 京セラ株式会社 発光装置
JP6870592B2 (ja) * 2017-11-24 2021-05-12 豊田合成株式会社 発光装置
TWI688933B (zh) 2018-07-16 2020-03-21 友達光電股份有限公司 顯示裝置

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007242645A (ja) * 2006-03-03 2007-09-20 Rohm Co Ltd 窒化物半導体発光素子及びその製造方法
US20090078963A1 (en) * 2007-07-09 2009-03-26 Salah Khodja Nano-optoelectronic chip structure and method
JP2009094144A (ja) * 2007-10-04 2009-04-30 Canon Inc 発光素子の製造方法
JP2014072215A (ja) * 2012-09-27 2014-04-21 Sharp Corp 表示装置
JP2018101785A (ja) * 2016-12-20 2018-06-28 エルジー ディスプレイ カンパニー リミテッド 発光ダイオードチップ及びこれを含む発光ダイオードディスプレイ装置
WO2018132070A1 (en) * 2017-01-13 2018-07-19 Massachusetts Institute Of Technology A method of forming a multilayer structure for a pixelated display and a multilayer structure for a pixelated display
JP2018205456A (ja) * 2017-06-01 2018-12-27 株式会社ブイ・テクノロジー フルカラーｌｅｄ表示パネル

Also Published As

Publication number Publication date
KR102816943B1 (ko) 2025-06-04
US11476308B2 (en) 2022-10-18
JP2024088732A (ja) 2024-07-02
EP3944343A4 (en) 2022-12-07
EP3944343A1 (en) 2022-01-26
CN113439343A (zh) 2021-09-24
WO2020196271A1 (ja) 2020-10-01
JP7507373B2 (ja) 2024-06-28
KR20210143729A (ko) 2021-11-29
TWI839491B (zh) 2024-04-21
US12527119B2 (en) 2026-01-13
JP7594231B2 (ja) 2024-12-04
TW202105710A (zh) 2021-02-01
US20230006001A1 (en) 2023-01-05
US20200303471A1 (en) 2020-09-24
EP3944343B1 (en) 2026-05-06

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