JPWO2020136903A1 - Manufacturing method of semiconductor devices, film-like adhesives and dicing / die bonding integrated film - Google Patents

Manufacturing method of semiconductor devices, film-like adhesives and dicing / die bonding integrated film Download PDF

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JPWO2020136903A1
JPWO2020136903A1 JP2020562297A JP2020562297A JPWO2020136903A1 JP WO2020136903 A1 JPWO2020136903 A1 JP WO2020136903A1 JP 2020562297 A JP2020562297 A JP 2020562297A JP 2020562297 A JP2020562297 A JP 2020562297A JP WO2020136903 A1 JPWO2020136903 A1 JP WO2020136903A1
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film
adhesive
semiconductor element
semiconductor
epoxy resin
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達也 矢羽田
慎太郎 橋本
祐樹 中村
大輔 舛野
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Resonac Corporation
Showa Denko Materials Co Ltd
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Hitachi Chemical Co Ltd
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    • C09J11/00Features of adhesives not provided for in group C09J9/00, e.g. additives
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    • H01L2224/484Connecting portions
    • H01L2224/4847Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
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Abstract

本開示に係る半導体装置の製造方法は、半導体素子と当該半導体素子がマウントされる部材とを接着するためのフィルム状接着剤を準備する工程と、上記部材の表面上に、フィルム状接着剤及び半導体素子を積層した状態で、上記部材の表面に対して半導体素子を圧着する工程とを含み、フィルム状接着剤の表面自由エネルギーの値E1(mJ/m2)と上記部材の表面自由エネルギーの値E2(mJ/m2)の差の絶対値が6.0〜10.0の範囲である。The method for manufacturing a semiconductor device according to the present disclosure includes a step of preparing a film-like adhesive for adhering a semiconductor element and a member on which the semiconductor element is mounted, and a film-like adhesive and a film-like adhesive on the surface of the member. The value of the surface free energy of the film-like adhesive E1 (mJ / m2) and the value of the surface free energy of the member include the step of crimping the semiconductor element to the surface of the member in a state where the semiconductor elements are laminated. The absolute value of the difference of E2 (mJ / m2) is in the range of 6.0 to 10.0.

Description

本開示は、半導体装置の製造方法、フィルム状接着剤及びダイシング・ダイボンディング一体型フィルムに関する。 The present disclosure relates to a method for manufacturing a semiconductor device, a film-like adhesive, and a dicing / die bonding integrated film.

従来、半導体装置の製造プロセスにおいて、半導体素子と支持部材との接合に、銀ペーストが主に使用されていた。しかし、近年の半導体素子の小型化及び集積化に伴い、銀ペーストのはみ出し又は半導体素子の傾きに起因してワイヤボンディングに不具合が発生しやすい傾向にある。銀ペーストの代わりに接着剤組成物を使用した場合、接着剤層の厚さを十分に均一にすることが困難であったり、接着剤層にボイド(空隙)が発生するなどの課題がある。 Conventionally, in the manufacturing process of a semiconductor device, silver paste has been mainly used for joining a semiconductor element and a support member. However, with the recent miniaturization and integration of semiconductor devices, there is a tendency that problems occur in wire bonding due to the protrusion of silver paste or the inclination of the semiconductor devices. When an adhesive composition is used instead of the silver paste, there are problems that it is difficult to make the thickness of the adhesive layer sufficiently uniform, and voids (voids) are generated in the adhesive layer.

近年、半導体素子と支持部材との接合にフィルム状の接着材が使用されるようになってきた。例えば、特許文献1は、基材と、ワイヤ埋込層と、絶縁層とからなるダイシング・ダイボンディング兼用シートを開示する。このシートの絶縁層とウェハを貼り合わせた状態でダイシングを実施することで、半導体ウェハ及びワイヤ埋込層が個片化される。ワイヤ埋込層を介して半導体素子を支持部材に熱圧着することにより、半導体素子と支持部材が接合される。 In recent years, film-like adhesives have come to be used for joining semiconductor devices and support members. For example, Patent Document 1 discloses a dicing / die bonding combined sheet including a base material, a wire embedding layer, and an insulating layer. By performing dicing with the insulating layer of this sheet and the wafer bonded together, the semiconductor wafer and the wire embedded layer are separated into individual pieces. The semiconductor element and the support member are joined by thermocompression bonding the semiconductor element to the support member via the wire embedded layer.

ところで、半導体装置の形態として、半導体素子が多段に積層された構成のスタックドMCP(Multi Chip Package)が普及している。スタックドMCPの例として、ワイヤ埋込型の半導体パッケージ及びチップ埋込型の半導体パッケージが挙げられる(特許文献2参照)。ワイヤ埋込型の半導体パッケージの製造に使用される接着フィルムはFOW(Film Over Wire)と称される。チップ埋込型の半導体パッケージの製造に使用される接着フィルムとしてFOD(Film Over Die)と称される。これらの接着フィルムは、ワイヤ又は半導体素子に対する優れた埋込性を有することが求められる。 By the way, as a form of a semiconductor device, a stacked MCP (Multi Chip Package) having a configuration in which semiconductor elements are stacked in multiple stages has become widespread. Examples of the stacked MCP include a wire-embedded semiconductor package and a chip-embedded semiconductor package (see Patent Document 2). The adhesive film used in the manufacture of wire-embedded semiconductor packages is called FOW (Film Over Wire). An adhesive film used in the manufacture of chip-embedded semiconductor packages is called FOD (Film Over Die). These adhesive films are required to have excellent embedding property in a wire or a semiconductor element.

特開2007−53240号公報Japanese Unexamined Patent Publication No. 2007-53240 特開2014−175459号公報Japanese Unexamined Patent Publication No. 2014-175459

半導体素子(チップ)の小サイズ化が進展するに伴い、半導体パッケージの製造過程の圧着工程において、単位面積当たりの押圧力が過度に大きくなる傾向にある。これにより、接着フィルムを構成する接着剤組成物が半導体素子からはみ出す現象(以下、「ブリード」という。)が生じたり、接着フィルムが過度に潰れて電気不良を招来したりする恐れがある。特に、チップ埋込型の半導体パッケージの製造使用される接着フィルム(FOD)の埋込性の向上のため、FOD組成を変更して圧着工程での流動性を高めると、ブリードが顕著となる。例えば、はみ出した接着剤組成物が半導体素子の上面にまではい上がることもあり、それが電気不良又はワイヤボンディング不良の原因になり得る。 As the size of semiconductor elements (chips) becomes smaller, the pressing force per unit area tends to become excessively large in the crimping process in the manufacturing process of semiconductor packages. This may cause a phenomenon in which the adhesive composition constituting the adhesive film protrudes from the semiconductor element (hereinafter referred to as “bleed”), or the adhesive film may be excessively crushed and cause electrical defects. In particular, in order to improve the embedding property of the adhesive film (FOD) used for manufacturing a chip-embedded semiconductor package, bleeding becomes remarkable when the FOD composition is changed to increase the fluidity in the crimping process. For example, the protruding adhesive composition may rise to the upper surface of the semiconductor device, which may cause electrical failure or wire bonding failure.

本開示は、圧着工程におけるブリードを十分に抑制できる半導体装置の製造方法を提供する。また、本開示は、この製造方法に適用可能なフィルム状接着剤及びダイシング・ダイボンディング一体型フィルムを提供する。 The present disclosure provides a method for manufacturing a semiconductor device capable of sufficiently suppressing bleeding in a crimping process. The present disclosure also provides a film-like adhesive and a dicing / die bonding integrated film applicable to this manufacturing method.

本開示に係る半導体装置の製造方法は、半導体素子と当該半導体素子がマウントされる部材とを接着するためのフィルム状接着剤を準備する工程と、上記部材の表面上に、フィルム状接着剤及び半導体素子を積層した状態で上記部材の表面に対して半導体素子を圧着する工程とを含み、フィルム状接着剤の表面自由エネルギーの値E(mJ/m)と部材の表面自由エネルギーの値E(mJ/m)の差の絶対値が6.0〜10.0の範囲である。The method for manufacturing a semiconductor device according to the present disclosure includes a step of preparing a film-like adhesive for adhering a semiconductor element and a member on which the semiconductor element is mounted, and a film-like adhesive and a film-like adhesive on the surface of the member. The value of the surface free energy of the film-like adhesive E 1 (mJ / m 2 ) and the value of the surface free energy of the member include the step of crimping the semiconductor element to the surface of the member in a state where the semiconductor elements are laminated. The absolute value of the difference of E 2 (mJ / m 2 ) is in the range of 6.0 to 10.0.

上記製造方法によれば、EとEの差の絶対値が6.0以上であることで、圧着工程において、フィルム状接着剤が上記部材に対して過度にぬれ広がることを抑制でき、これにより、ブリードを十分に抑制できる。他方、EとEの差の絶対値が10.0以下であることで、埋め込むべきチップ及び/又はワイヤを上記部材が有していても、優れた埋込性を達成できる。According to the above-mentioned manufacturing method, when the absolute value of the difference between E 1 and E 2 is 6.0 or more, it is possible to prevent the film-like adhesive from being excessively wetted and spread on the above-mentioned member in the crimping step. As a result, bleeding can be sufficiently suppressed. On the other hand, when the absolute value of the difference between E 1 and E 2 is 10.0 or less, excellent embedding property can be achieved even if the member has a chip and / or a wire to be embedded.

本開示の方法によって、チップ埋込型半導体パッケージを製造してもよいし、ワイヤ埋込型半導体パッケージを製造してもよい。チップ埋込型半導体パッケージを製造する場合、上記部材として、基板と、基板の表面上にマウントされたチップとを備える構造体を準備し、フィルム状接着剤にチップが埋め込まれるように、基板の表面に対して半導体素子を圧着すればよい。ワイヤ埋込型半導体パッケージを製造する場合、上記部材として、基板と、基板の表面上に設けられたワイヤとを備える構造体を準備し、フィルム状接着剤にワイヤが埋め込まれるように、基板の表面に対して半導体素子を圧着すればよい。 By the method of the present disclosure, a chip-embedded semiconductor package may be manufactured, or a wire-embedded semiconductor package may be manufactured. When manufacturing a chip-embedded semiconductor package, a structure including a substrate and a chip mounted on the surface of the substrate is prepared as the above member, and the substrate is embedded so that the chip is embedded in a film-like adhesive. The semiconductor element may be crimped to the surface. When manufacturing a wire-embedded semiconductor package, a structure including a substrate and a wire provided on the surface of the substrate is prepared as the above member, and the substrate is embedded so that the wire is embedded in a film-like adhesive. The semiconductor element may be crimped to the surface.

本開示の製造方法において、フィルム状接着剤と、粘着剤層と、基材フィルムとを含み、これらがこの順序で積層されているダイシング・ダイボンディング一体型フィルムを使用してもよい。すなわち、本開示の製造方法は、ダイシング・ダイボンディング一体型フィルムを準備する工程と、ダイシング・ダイボンディング一体型フィルムのフィルム状接着剤とウェハとを貼り合わせる工程と、フィルム状接着剤に貼り合わされた状態のウェハを複数の半導体素子に個片化する工程と、フィルム状接着剤が個片化されることによって形成された接着剤片と半導体素子と含む積層体を粘着剤層からピックアップする工程と、上記部材に対して積層体を圧着する工程と、加熱処理によって接着剤片を硬化させる工程とを含むものであってもよい。 In the manufacturing method of the present disclosure, a dicing / die bonding integrated film containing a film-like adhesive, a pressure-sensitive adhesive layer, and a base film, which are laminated in this order, may be used. That is, the manufacturing method of the present disclosure includes a step of preparing a dicing / die bonding integrated film, a step of bonding the film-shaped adhesive and the wafer of the dicing / die bonding integrated film, and a step of bonding to the film-shaped adhesive. A step of individualizing a wafer in a state of being into a plurality of semiconductor elements, and a step of picking up a laminate containing an adhesive piece formed by individualizing a film-like adhesive and a semiconductor element from an adhesive layer. And may include a step of crimping the laminated body to the above member and a step of curing the adhesive piece by heat treatment.

本開示に係るフィルム状接着剤は、熱硬化性樹脂組成物からなり、表面自由エネルギーの値Eが38〜41mJ/mである。Eがこの範囲であることで、EとEの差の絶対値を6.0〜10.0の範囲内としやすい。なお、上記部材の表面自由エネルギーの値Eは、例えば、46〜48mJ/mである。The film-like adhesive according to the present disclosure is made of a thermosetting resin composition and has a surface free energy value E 1 of 38 to 41 mJ / m 2 . Since E 1 is in this range, the absolute value of the difference between E 1 and E 2 is likely to be in the range of 6.0 to 10.0. The surface free energy value E 2 of the member is, for example, 46 to 48 mJ / m 2 .

上記範囲の表面自由エネルギーの値Eを有するフィルム状接着剤を調製するには、例えば、フィルム状接着剤を構成する熱硬化性樹脂組成物の組成に関する以下の複数の事項のうち、一つ又は複数の事項を採用すればよい。
・25℃において液状であるエポキシ樹脂の含有率(熱硬化性樹脂組成物に含まれるエポキシ樹脂の全質量基準)を5〜10質量%とする。
・熱硬化性樹脂組成物が脂環式構造を有するエポキシ樹脂と、硬化剤(例えば、フェノール樹脂)と、エラストマ(例えば、アクリル樹脂)とを含む。
・脂環式構造を有するエポキシ樹脂の含有率(熱硬化性樹脂組成物に含まれるエポキシ樹脂の全質量基準)を5〜30質量%とする。
・熱硬化性樹脂組成物が無機フィラーを含む。
・熱硬化性樹脂組成物が硬化促進剤を含む。
In order to prepare a film-like adhesive having a surface free energy value E 1 in the above range, for example, one of the following plurality of items relating to the composition of the thermosetting resin composition constituting the film-like adhesive. Alternatively, a plurality of items may be adopted.
The content of the epoxy resin that is liquid at 25 ° C. (based on the total mass of the epoxy resin contained in the thermosetting resin composition) is 5 to 10% by mass.
-The thermosetting resin composition contains an epoxy resin having an alicyclic structure, a curing agent (for example, a phenol resin), and an elastoma (for example, an acrylic resin).
The content of the epoxy resin having an alicyclic structure (based on the total mass of the epoxy resin contained in the thermosetting resin composition) is 5 to 30% by mass.
-The thermosetting resin composition contains an inorganic filler.
-The thermosetting resin composition contains a curing accelerator.

上記フィルム状接着剤は、基材フィルムとともに接着フィルムを構成してもよい。すなわち、本開示の他の側面は、フィルム状接着剤と、当該フィルム状接着剤の一方の表面上に設けられた基材フィルムとを備える接着フィルムを提供する。上記フィルム状接着剤は、粘着剤層及び基材フィルムとともにダイシング・ダイボンディング一体型フィルムを構成してもよい。すなわち、本開示の他の側面は、フィルム状接着剤と、粘着剤層と、基材フィルムとを備え、これらがこの順序で積層されたダイシング・ダイボンディング一体型フィルムを提供する。このダイシング・ダイボンディング一体型フィルムは、フィルム状接着剤を覆うように設けられた保護フィルムを更に備えてもよい。 The film-like adhesive may form an adhesive film together with the base film. That is, another aspect of the present disclosure provides an adhesive film comprising a film-like adhesive and a substrate film provided on one surface of the film-like adhesive. The film-like adhesive may form a dicing / die bonding integrated film together with the pressure-sensitive adhesive layer and the base film. That is, another aspect of the present disclosure provides a dicing-diebonding integrated film comprising a film-like adhesive, a pressure-sensitive adhesive layer, and a base film, which are laminated in this order. The dicing / die bonding integrated film may further include a protective film provided so as to cover the film-like adhesive.

本開示によれば、圧着工程におけるブリードを十分に抑制できる半導体装置の製造方法が提供される。また、本開示によれば、この製造方法に適用可能なフィルム状接着剤及びダイシング・ダイボンディング一体型フィルムが提供される。 According to the present disclosure, there is provided a method for manufacturing a semiconductor device capable of sufficiently suppressing bleeding in a crimping process. Further, according to the present disclosure, a film-like adhesive and a dicing / die bonding integrated film applicable to this manufacturing method are provided.

図1は半導体パッケージの一例を模式的に示す断面図である。FIG. 1 is a cross-sectional view schematically showing an example of a semiconductor package. 図2は接着剤片と第2の半導体素子とからなる積層体の一例を模式的に示す断面図である。FIG. 2 is a cross-sectional view schematically showing an example of a laminate composed of an adhesive piece and a second semiconductor element. 図3は図1に示す半導体パッケージを製造する過程を模式的に示す断面図である。FIG. 3 is a cross-sectional view schematically showing a process of manufacturing the semiconductor package shown in FIG. 図4は図1に示す半導体パッケージを製造する過程を模式的に示す断面図である。FIG. 4 is a cross-sectional view schematically showing a process of manufacturing the semiconductor package shown in FIG. 図5は図1に示す半導体パッケージを製造する過程を模式的に示す断面図である。FIG. 5 is a cross-sectional view schematically showing a process of manufacturing the semiconductor package shown in FIG. 図6は図1に示す半導体パッケージを製造する過程を模式的に示す断面図である。FIG. 6 is a cross-sectional view schematically showing a process of manufacturing the semiconductor package shown in FIG. 図7(a)〜図7(e)は、接着剤片と第2の半導体素子とからなる積層体を製造する過程を模式的に示す断面図である。7 (a) to 7 (e) are cross-sectional views schematically showing a process of manufacturing a laminate composed of an adhesive piece and a second semiconductor element.

以下、図面を参照しながら本開示の実施形態について詳細に説明する。以下の説明では、同一又は相当部分には同一符号を付し、重複する説明は省略する。また、上下左右等の位置関係は、特に断らない限り、図面に示す位置関係に基づくものとする。更に、図面の寸法比率は図示の比率に限られるものではない。なお、本明細書における「(メタ)アクリル」の記載は、「アクリル」及びそれに対応する「メタクリル」を意味する。 Hereinafter, embodiments of the present disclosure will be described in detail with reference to the drawings. In the following description, the same or corresponding parts will be designated by the same reference numerals, and duplicate description will be omitted. In addition, the positional relationship such as up, down, left, and right shall be based on the positional relationship shown in the drawings unless otherwise specified. Furthermore, the dimensional ratios in the drawings are not limited to the ratios shown. The description of "(meth) acrylic" in the present specification means "acrylic" and the corresponding "methacryl".

<半導体パッケージ>
図1は本実施形態に係るチップ埋込型半導体パッケージを模式的に示す断面図である。この図に示す半導体パッケージ100(半導体装置)は、基板10と、基板10の表面上にマウントされた第1の半導体素子Wa(チップ)と、第1の半導体素子Waを封止している第1の封止層20と、第1の半導体素子Waの上方に配置された第2の半導体素子Wbと、第2の半導体素子Wbを封止している第2の封止層40とを備える。
<Semiconductor package>
FIG. 1 is a cross-sectional view schematically showing a chip-embedded semiconductor package according to the present embodiment. In the semiconductor package 100 (semiconductor device) shown in this figure, the substrate 10, the first semiconductor element Wa (chip) mounted on the surface of the substrate 10, and the first semiconductor element Wa are sealed. 1. The sealing layer 20 includes a second semiconductor element Wb arranged above the first semiconductor element Wa, and a second sealing layer 40 that seals the second semiconductor element Wb. ..

基板10は、表面に回路パターン10a,10bを有する。半導体パッケージ100の反りを抑制する観点から、基板10の厚さは、例えば、90〜180μmであり、90〜140μmであってもよい。なお、基板10は有機基板であっても、リードフレーム等の金属基板であってもよい。 The substrate 10 has circuit patterns 10a and 10b on its surface. From the viewpoint of suppressing the warp of the semiconductor package 100, the thickness of the substrate 10 is, for example, 90 to 180 μm, and may be 90 to 140 μm. The substrate 10 may be an organic substrate or a metal substrate such as a lead frame.

本実施形態において、第1の半導体素子Waは半導体パッケージ100を駆動するためのコントローラチップである。第1の半導体素子Waは、回路パターン10a上に接着剤15を介して接着されており、また、kを介して回路パターン10bに接続されている。平面視における第1の半導体素子Waの形状は、例えば矩形(正方形又は長方形)である。第1の半導体素子Waの一辺の長さは、例えば、6mm以下であり、2〜5mm又は1〜4mmであってもよい。第1の半導体素子Waの厚さは、例えば、10〜150μmであり、20〜100μmであってもよい。 In the present embodiment, the first semiconductor element Wa is a controller chip for driving the semiconductor package 100. The first semiconductor element Wa is adhered to the circuit pattern 10a via the adhesive 15, and is also connected to the circuit pattern 10b via k. The shape of the first semiconductor element Wa in a plan view is, for example, a rectangle (square or rectangle). The length of one side of the first semiconductor element Wa is, for example, 6 mm or less, and may be 2 to 5 mm or 1 to 4 mm. The thickness of the first semiconductor element Wa is, for example, 10 to 150 μm, and may be 20 to 100 μm.

第2の半導体素子Wbは、第1の半導体素子Waよりも大きい面積を有する。第2の半導体素子Wbは、第1の半導体素子Waの全体と回路パターン10bの一部とが覆われるように第1の封止層20を介して基板10上に搭載されている。平面視における第2の半導体素子Wbの形状は、例えば矩形(正方形又は長方形)である。第2の半導体素子Wbの一辺の長さは、例えば、20mm以下であり、4〜20mm又は4〜12mmであってもよい。第2の半導体素子Wbの厚さは、例えば、10〜170μmであり、20〜120μmであってもよい。第2の半導体素子Wbは、第2のワイヤ12を介して回路パターン10bに接続されるとともに第2の封止層40により封止されている。 The second semiconductor element Wb has a larger area than the first semiconductor element Wa. The second semiconductor element Wb is mounted on the substrate 10 via the first sealing layer 20 so that the entire first semiconductor element Wa and a part of the circuit pattern 10b are covered. The shape of the second semiconductor element Wb in a plan view is, for example, a rectangle (square or rectangle). The length of one side of the second semiconductor element Wb is, for example, 20 mm or less, and may be 4 to 20 mm or 4 to 12 mm. The thickness of the second semiconductor element Wb is, for example, 10 to 170 μm, and may be 20 to 120 μm. The second semiconductor element Wb is connected to the circuit pattern 10b via the second wire 12 and is sealed by the second sealing layer 40.

第1の封止層20は接着剤片20P(図2参照)の硬化物からなる。なお、図2に示すとおり、接着剤片20Pと第2の半導体素子Wbは実質的に同じサイズである。図2に示す積層体30は、接着剤片20Pと第2の半導体素子Wbとからなり、接着剤付き半導体素子とも称される。積層体30は、後述のとおり、ダイシング工程及びピックアップ工程を経て作製される(図7参照)。 The first sealing layer 20 is made of a cured product of the adhesive piece 20P (see FIG. 2). As shown in FIG. 2, the adhesive piece 20P and the second semiconductor element Wb have substantially the same size. The laminate 30 shown in FIG. 2 is composed of an adhesive piece 20P and a second semiconductor element Wb, and is also referred to as a semiconductor element with an adhesive. The laminate 30 is manufactured through a dicing step and a pickup step as described later (see FIG. 7).

<半導体パッケージの製造方法>
半導体パッケージ100の製造方法について説明する。まず、図3に示すように、基板10と、これにマウントされた第1の半導体素子Waとを備える構造体50を作製する。すなわち、基板10の表面上に接着剤15を介して第1の半導体素子Waを配置する。その後、第1の半導体素子Waと回路パターン10bとを第1のワイヤ11で電気的に接続する。
<Manufacturing method of semiconductor package>
The manufacturing method of the semiconductor package 100 will be described. First, as shown in FIG. 3, a structure 50 including a substrate 10 and a first semiconductor element Wa mounted on the substrate 10 is manufactured. That is, the first semiconductor element Wa is arranged on the surface of the substrate 10 via the adhesive 15. After that, the first semiconductor element Wa and the circuit pattern 10b are electrically connected by the first wire 11.

次に、図4に示すように、別途準備した積層体30の接着剤片20Pを基板10に対して圧着する。これによって、第1の半導体素子Wa及び第1のワイヤ11を接着剤片20Pに埋め込む。圧着工程において、ブリードを抑制し且つ優れた埋込性を達成する観点から、接着剤片20Pの表面自由エネルギーの値E(mJ/m)と基板10の表面自由エネルギーの値E(mJ/m)の差の絶対値は6.0〜10.0の範囲である。EとEの差の絶対値が6.0以上であることで、圧着工程において、接着剤片20Pが基板10に対して過度にぬれ広がることを抑制でき、これにより、ブリードを十分に抑制できる。他方、EとEの差の絶対値が10.0以下であることで、優れた埋込性を達成できる。EとEの差の絶対値の下限値は、6.6であってもよく、7.0又は7.6であってもよい。EとEの差の絶対値の上限値は、9.6であってもよく、9.0又は8.6であってもよい。なお、EとEの差の絶対値が上記範囲であればよく、EがEよりも大きくてもよいし、EがEよりも大きくてもよい。Next, as shown in FIG. 4, the adhesive piece 20P of the laminated body 30 prepared separately is pressure-bonded to the substrate 10. As a result, the first semiconductor element Wa and the first wire 11 are embedded in the adhesive piece 20P. In the crimping process, in view of achieving and excellent embedding properties suppressed bleeding, value E 1 of the surface free energy of the adhesive strip 20P (mJ / m 2) and the value of surface free energy of the substrate 10 E 2 ( the absolute value of the difference mJ / m 2) is in the range of 6.0 to 10.0. When the absolute value of the difference between E 1 and E 2 is 6.0 or more, it is possible to prevent the adhesive piece 20P from being excessively wet and spread with respect to the substrate 10 in the crimping process, whereby bleeding can be sufficiently performed. Can be suppressed. On the other hand, when the absolute value of the difference between E 1 and E 2 is 10.0 or less, excellent embedding property can be achieved. The lower limit of the absolute value of the difference between E 1 and E 2 may be 6.6, 7.0 or 7.6. The upper limit of the absolute value of the difference between E 1 and E 2 may be 9.6, 9.0 or 8.6. The absolute value of the difference between E 1 and E 2 may be in the above range, and E 1 may be larger than E 2 or E 2 may be larger than E 1.

接着剤片20Pの表面自由エネルギーの値Eは、例えば、37〜41mJ/mであり、38〜40mJ/mであってもよい。Eがこの範囲であることで、EとEの差の絶対値を6.0〜10.0の範囲内としやすい。 The value E 1 of the surface free energy of the adhesive piece 20P is, for example, 37 to 41 mJ / m 2 , and may be 38 to 40 mJ / m 2. Since E 1 is in this range, the absolute value of the difference between E 1 and E 2 is likely to be in the range of 6.0 to 10.0.

基板10の表面自由エネルギーの値Eは、例えば、30〜50mJ/mであり、32〜49mJ/m又は34〜48mJ/mであってもよい。Eがこの範囲であることで、EとEの差の絶対値を6.0〜10.0の範囲内としやすい。Eの値は、基板10の表面であって接着剤片20Pが接する領域及びその近傍に対して必要に応じて改質処理を施すことによって調整できる。より具体的には、プラズマ処理を施したり、極性付与するソルダーレジストを用いることによってEの値を調整することができる。The surface free energy value E 2 of the substrate 10 is, for example, 30 to 50 mJ / m 2 , and may be 32 to 49 mJ / m 2 or 34 to 48 mJ / m 2. Since E 2 is in this range, the absolute value of the difference between E 1 and E 2 is likely to be in the range of 6.0 to 10.0. The value of E 2 can be adjusted by subjecting the region of the surface of the substrate 10 where the adhesive piece 20P is in contact and the vicinity thereof to a modification treatment as necessary. More specifically, the value of E 2 can be adjusted by subjecting it to plasma treatment or by using a solder resist that imparts polarity.

接着剤片20Pの厚さは、第1の半導体素子Waの厚さ等に応じて適宜設定すればよく、例えば、20〜200μmであればよく、30〜200μm又は40〜150μmであってもよい。接着剤片20Pの厚さを上記範囲とすることで、第1の半導体素子Waと第2の半導体素子Wbの間隔(図5における距離G)を十分に確保することができる。距離Gは、例えば50μm以上であることが好ましく、50〜75μm又は50〜80μmであってもよい。 The thickness of the adhesive piece 20P may be appropriately set according to the thickness of the first semiconductor element Wa and the like, and may be, for example, 20 to 200 μm, 30 to 200 μm, or 40 to 150 μm. .. By setting the thickness of the adhesive piece 20P within the above range, the distance between the first semiconductor element Wa and the second semiconductor element Wb (distance G in FIG. 5) can be sufficiently secured. The distance G is preferably, for example, 50 μm or more, and may be 50 to 75 μm or 50 to 80 μm.

接着剤片20Pの基板10に対する圧着は、例えば、80〜180℃、0.01〜0.50MPaの条件で、0.5〜3.0秒間にわたって実施することが好ましい。次に、加熱によって接着剤片20Pを硬化させる。この硬化処理は、例えば、60〜175℃、0.01〜1.0MPaの条件で、5分間以上にわたって実施することが好ましい。これにより、接着剤片20Pの硬化物(第1の封止層20)で第1の半導体素子Waが封止される(図6参照)。接着剤片20Pの硬化処理は、ボイドの低減の観点から、加圧雰囲気下で実施してもよい。第2の半導体素子Wbと回路パターン10bとを第2のワイヤ12で電気的に接続した後、第2の封止層40によって第2の半導体素子Wbを封止することによって半導体パッケージ100が完成する(図1参照)。 The pressure-bonding of the adhesive piece 20P to the substrate 10 is preferably carried out, for example, under the conditions of 80 to 180 ° C. and 0.01 to 0.50 MPa for 0.5 to 3.0 seconds. Next, the adhesive piece 20P is cured by heating. This curing treatment is preferably carried out at 60 to 175 ° C. and 0.01 to 1.0 MPa for 5 minutes or longer. As a result, the first semiconductor element Wa is sealed with the cured product (first sealing layer 20) of the adhesive piece 20P (see FIG. 6). The curing treatment of the adhesive piece 20P may be carried out in a pressurized atmosphere from the viewpoint of reducing voids. The semiconductor package 100 is completed by electrically connecting the second semiconductor element Wb and the circuit pattern 10b with the second wire 12 and then sealing the second semiconductor element Wb with the second sealing layer 40. (See Fig. 1).

<接着剤付き半導体素子の作製方法>
図7(a)〜図7(e)を参照しながら、図2に示す積層体30(接着剤付き半導体素子)の作製方法の一例について説明する。まず、ダイシング・ダイボンディング一体型フィルム8(以下、場合により「フィルム8」という。)を所定の装置(不図示)に配置する。フィルム8は、基材フィルム1と粘着剤層2と接着剤層20A(フィルム状接着剤)とをこの順序で備える。基材フィルム1は、例えば、ポリエチレンテレフタレートフィルム(PETフィルム)である。半導体ウェハWは、例えば、厚さ10〜100μmの薄型半導体ウェハである。半導体ウェハWは、単結晶シリコンであってもよいし、多結晶シリコン、各種セラミック、ガリウム砒素等の化合物半導体であってもよい。なお、フィルム8は、接着剤層20Aを覆うように設けられた保護フィルム(不図示)を更に備えたものであってもよい。
<Method of manufacturing semiconductor devices with adhesive>
An example of a method for manufacturing the laminate 30 (semiconductor device with an adhesive) shown in FIG. 2 will be described with reference to FIGS. 7 (a) to 7 (e). First, a dicing / die bonding integrated film 8 (hereinafter, referred to as “film 8” in some cases) is placed in a predetermined device (not shown). The film 8 includes a base film 1, an adhesive layer 2, and an adhesive layer 20A (film-like adhesive) in this order. The base film 1 is, for example, a polyethylene terephthalate film (PET film). The semiconductor wafer W is, for example, a thin semiconductor wafer having a thickness of 10 to 100 μm. The semiconductor wafer W may be single crystal silicon or a compound semiconductor such as polycrystalline silicon, various ceramics, and gallium arsenide. The film 8 may be further provided with a protective film (not shown) provided so as to cover the adhesive layer 20A.

図7(a)及び図7(b)に示すように、半導体ウェハWの一方の面に接着剤層20Aが接するようにフィルム8を貼り付ける。この工程は、好ましくは50〜120℃、より好ましくは60〜100℃の温度条件下で実施する。温度が50℃以上であると、半導体ウェハWを接着剤層20Aとの良好な密着性を得ることができ、120℃以下であると、この工程において接着剤層20Aが過度に流動することが抑制される。 As shown in FIGS. 7 (a) and 7 (b), the film 8 is attached so that the adhesive layer 20A is in contact with one surface of the semiconductor wafer W. This step is preferably carried out under temperature conditions of 50 to 120 ° C, more preferably 60 to 100 ° C. When the temperature is 50 ° C. or higher, good adhesion of the semiconductor wafer W to the adhesive layer 20A can be obtained, and when the temperature is 120 ° C. or lower, the adhesive layer 20A may excessively flow in this step. It is suppressed.

図7(c)に示すように、半導体ウェハW、粘着剤層2及び接着剤層20Aをダイシングする。これにより、半導体ウェハWが個片化されて半導体素子Wbとなる。接着剤層20Aも個片化されて接着剤片20Pとなる。ダイシング方法としては、回転刃又はレーザを用いる方法が挙げられる。なお、半導体ウェハWのダイシングに先立って半導体ウェハWを研削することによって薄膜化してもよい。 As shown in FIG. 7 (c), the semiconductor wafer W, the adhesive layer 2 and the adhesive layer 20A are diced. As a result, the semiconductor wafer W is fragmented into a semiconductor element Wb. The adhesive layer 20A is also individualized to form an adhesive piece 20P. Examples of the dicing method include a method using a rotary blade or a laser. The semiconductor wafer W may be thinned by grinding the semiconductor wafer W prior to dicing the semiconductor wafer W.

次に、粘着剤層2が例えばUV硬化型である場合、図7(d)に示すように、粘着剤層2に対して紫外線を照射することにより粘着剤層2を硬化させ、粘着剤層2と接着剤片20Pとの間の粘着力を低下させる。紫外線照射後、図7(e)に示されるように、常温又は冷却条件下において基材フィルム1をエキスパンドすることによって半導体素子Waを互いに離間させつつ、ニードル42で突き上げることによって粘着剤層2から積層体30の接着剤片20Pを剥離させるとともに、積層体30を吸引コレット44で吸引してピックアップする。このようにして得られた積層体30は、図4に示すように、半導体パッケージ100の製造に供される。 Next, when the pressure-sensitive adhesive layer 2 is, for example, a UV curable type, as shown in FIG. 7D, the pressure-sensitive adhesive layer 2 is cured by irradiating the pressure-sensitive adhesive layer 2 with ultraviolet rays to cure the pressure-sensitive adhesive layer 2. The adhesive force between 2 and the adhesive piece 20P is reduced. After irradiation with ultraviolet rays, as shown in FIG. 7 (e), the semiconductor elements Wa are separated from each other by expanding the base film 1 under normal temperature or cooling conditions, and the semiconductor elements Wa are pushed up from the pressure-sensitive adhesive layer 2 by the needle 42. The adhesive piece 20P of the laminated body 30 is peeled off, and the laminated body 30 is sucked and picked up by the suction collet 44. As shown in FIG. 4, the laminate 30 thus obtained is used for manufacturing the semiconductor package 100.

<ダイシング・ダイボンディング一体型フィルム及びその製造方法>
図7(a)に示すダイシング・ダイボンディング一体型フィルム8及びその製造方法について説明する。上述のとおり、フィルム8は、基材フィルム1(例えばPETフィルム)と粘着剤層2と接着剤層20A(接着フィルム)とをこの順序で備える。フィルム8の製造方法は、エポキシ樹脂等を含む熱硬化性樹脂組成物のワニスをフィルム(不図示)上に塗布する工程と、塗布されたワニスを50〜150℃で加熱乾燥することによって接着剤層20Aを形成する工程と、接着剤層20Aと粘着剤層2とを貼り合わせる工程とを含む。
<Dicing / die bonding integrated film and its manufacturing method>
The dicing / die bonding integrated film 8 shown in FIG. 7A and a method for manufacturing the same will be described. As described above, the film 8 includes the base film 1 (for example, PET film), the pressure-sensitive adhesive layer 2, and the adhesive layer 20A (adhesive film) in this order. The method for producing the film 8 is a step of applying a varnish of a thermosetting resin composition containing an epoxy resin or the like onto a film (not shown), and an adhesive by heating and drying the applied varnish at 50 to 150 ° C. The step of forming the layer 20A and the step of adhering the adhesive layer 20A and the pressure-sensitive adhesive layer 2 are included.

接着剤層20Aは、例えば、エポキシ樹脂と、硬化剤と、エラストマとを含むワニスをフィルム上に塗工する工程と、フィルム上に形成された塗膜を乾燥させる工程を経て形成される。ワニスは、必要に応じて、無機フィラー及び硬化促進剤等を更に含んでもよい。ワニスは、エポキシ樹脂等の材料を、溶剤中で混合又は混練することによって調製することができる。混合又は混練は、通常の撹拌機、らいかい機、三本ロール、ボールミル等の分散機を用い、これらを適宜組み合わせて行うことができる。なお、ワニスの詳細については後述する。 The adhesive layer 20A is formed through, for example, a step of applying a varnish containing an epoxy resin, a curing agent, and an elastomer on the film, and a step of drying the coating film formed on the film. The varnish may further contain an inorganic filler, a curing accelerator and the like, if necessary. The varnish can be prepared by mixing or kneading a material such as an epoxy resin in a solvent. Mixing or kneading can be performed by using a disperser such as a normal stirrer, a raft machine, a three-roll machine, or a ball mill, and combining these as appropriate. The details of the varnish will be described later.

ワニスが塗布されるフィルムとしては、特に制限はなく、例えば、ポリエステルフィルム、ポリプロピレンフィルム(OPPフィルム等)、ポリエチレンテレフタレートフィルム、ポリイミドフィルム、ポリエーテルイミドフィルム、ポリエーテルナフタレートフィルム、メチルペンテンフィルムが挙げられる。 The film to which the varnish is applied is not particularly limited, and examples thereof include polyester film, polypropylene film (OPP film, etc.), polyethylene terephthalate film, polyimide film, polyetherimide film, polyethernaphthalate film, and methylpentene film. Be done.

フィルムにワニスを塗布する方法としては、公知の方法を用いることができ、例えば、ナイフコート法、ロールコート法、スプレーコート法、グラビアコート法、バーコート法、カーテンコート法が挙げられる。加熱乾燥の条件は、使用した溶剤が充分に揮散する条件であればよく、例えば、50〜150℃で、1〜30分間加熱して行うことができる。加熱乾燥は、50〜150℃の範囲内の温度で段階的に昇温させて行ってもよい。ワニスに含まれる溶剤を加熱乾燥によって揮発させることによって、フィルムと接着剤層20Aとの積層フィルムを得ることができる。 As a method for applying the varnish to the film, a known method can be used, and examples thereof include a knife coating method, a roll coating method, a spray coating method, a gravure coating method, a bar coating method, and a curtain coating method. The heat-drying condition may be any condition as long as the solvent used is sufficiently volatilized, and for example, it can be heated at 50 to 150 ° C. for 1 to 30 minutes. The heat drying may be carried out by gradually raising the temperature in the range of 50 to 150 ° C. By volatilizing the solvent contained in the varnish by heating and drying, a laminated film of the film and the adhesive layer 20A can be obtained.

上記のようにして得た積層フィルムと、ダイシングフィルム(基材フィルム1と粘着剤層2の積層体)とを貼り合わせることによってフィルム8を得ることができる。基材フィルム1としては、例えば、ポリテトラフルオロエチレンフィルム、ポリエチレンテレフタレートフィルム、ポリエチレンフィルム、ポリプロピレンフィルム、ポリメチルペンテンフィルム、ポリイミドフィルム等のプラスチックフィルムが挙げられる。また、基材フィルム1は、必要に応じて、プライマー塗布、UV処理、コロナ放電処理、研磨処理、エッチング処理等の表面処理が行われていてもよい。粘着剤層2は、UV硬化型であってもよいし、感圧型であってもよい。粘着剤層2を構成する粘着剤として、従来、ダイシングフィルムに使用されている粘着剤を使用すればよい。粘着剤層2の厚さは、経済性及びフィルムの取扱い性の観点から、例えば、60〜200μmであり、70〜170μmであってもよい。 The film 8 can be obtained by laminating the laminated film obtained as described above and the dicing film (laminated body of the base film 1 and the pressure-sensitive adhesive layer 2). Examples of the base film 1 include plastic films such as polytetrafluoroethylene film, polyethylene terephthalate film, polyethylene film, polypropylene film, polymethylpentene film, and polyimide film. Further, the base film 1 may be subjected to surface treatment such as primer coating, UV treatment, corona discharge treatment, polishing treatment, and etching treatment, if necessary. The pressure-sensitive adhesive layer 2 may be a UV curable type or a pressure-sensitive type. As the pressure-sensitive adhesive constituting the pressure-sensitive adhesive layer 2, a pressure-sensitive adhesive conventionally used for a dicing film may be used. The thickness of the pressure-sensitive adhesive layer 2 is, for example, 60 to 200 μm and may be 70 to 170 μm from the viewpoint of economy and handleability of the film.

<接着剤層形成用のワニス>
接着剤層20Aを形成するためのワニスについて詳細に説明する。なお、接着剤片20Pは接着剤層20Aを個片化したものであり、両者は同じ熱硬化性樹脂組成物からなる。接着剤層20A及び接着剤片20Pは、溶剤を揮散させるための加熱処理を経ているため半硬化(Bステージ)の状態であり、その後の硬化処理によって完全硬化物(Cステージ)状態となる。
<Varnish for forming adhesive layer>
The varnish for forming the adhesive layer 20A will be described in detail. The adhesive piece 20P is an individualized adhesive layer 20A, and both are made of the same thermosetting resin composition. The adhesive layer 20A and the adhesive piece 20P are in a semi-cured state (B stage) because they have undergone a heat treatment for volatilizing the solvent, and are in a completely cured product (C stage) state by the subsequent curing treatment.

接着剤層形成用のワニスは、上述のとおり、エポキシ樹脂と、硬化剤と、エラストマとを含み、必要に応じて、無機フィラー及び硬化促進剤等を更に含む。ワニスを調製するための溶剤は、上記各成分を均一に溶解、混練又は分散できるものであれば制限はなく、例えば、アセトン、メチルエチルケトン、メチルイソブチルケトン、シクロヘキサノン等のケトン系溶媒、ジメチルホルムアミド、ジメチルアセトアミド、Nメチルピロリドン、トルエン、キシレンを使用できる。乾燥速度が速く、価格が安い点でメチルエチルケトン又はシクロヘキサノンを使用することが好ましい。 As described above, the varnish for forming the adhesive layer contains an epoxy resin, a curing agent, an elastomer, and if necessary, further contains an inorganic filler, a curing accelerator, and the like. The solvent for preparing the varnish is not limited as long as it can uniformly dissolve, knead or disperse each of the above components, and is, for example, a ketone solvent such as acetone, methyl ethyl ketone, methyl isobutyl ketone, cyclohexanone, dimethylformamide, dimethyl. Acetamide, N-methylpyrrolidone, toluene and xylene can be used. It is preferable to use methyl ethyl ketone or cyclohexanone because the drying speed is fast and the price is low.

(エポキシ樹脂)
エポキシ樹脂としては、構造に特に制限はないが、相溶性の観点から、脂環式構造を有するものが好ましい。接着剤層20Aの表面自由エネルギーの値Eを38〜41mJ/mの範囲とする観点から、脂環式構造を有するエポキシ樹脂の含有率は接着剤層20Aに含まれるエポキシ樹脂の全質量基準で、例えば、5〜40質量%であり、6〜35質量%又は7〜34質量%であってもよい。同様の観点から、25℃において液状であるエポキシ樹脂の含有率は接着剤層20Aに含まれるエポキシ樹脂の全質量基準で、例えば、5〜30質量%であり、7〜25質量%又は8〜23質量%であってもよい。
(Epoxy resin)
The structure of the epoxy resin is not particularly limited, but a resin having an alicyclic structure is preferable from the viewpoint of compatibility. From the viewpoint that the value E 1 of the surface free energy of the adhesive layer 20A is in the range of 38 to 41 mJ / m 2 , the content of the epoxy resin having an alicyclic structure is the total mass of the epoxy resin contained in the adhesive layer 20A. By reference, for example, it may be 5 to 40% by mass, 6 to 35% by mass, or 7 to 34% by mass. From the same viewpoint, the content of the epoxy resin that is liquid at 25 ° C. is, for example, 5 to 30% by mass, 7 to 25% by mass, or 8 to 8 to 30% by mass based on the total mass of the epoxy resin contained in the adhesive layer 20A. It may be 23% by mass.

エポキシ樹脂の市販品として、例えば、ジシクロペンタジエン型エポキシ樹脂HP−7200L(DIC(株)製)、HP−7200(DIC(株)製)、XD−1000(日本化薬(株)製)、セロキサイド2021P(ダイセル(株)製)、セロキサイド20281(ダイセル(株)製)、Syna−Epoxy28(SYANASIA社製)、ビスA型エポキシ樹脂YD−128(三菱ケミカル(株)製)、ビスF型エポキシ樹脂EXA−830−CRP(DIC(株)社製)が挙げられる。これらは一種を単独で使用してもよいし、二種以上を併用してもよい。 Commercially available epoxy resins include, for example, dicyclopentadiene type epoxy resin HP-7200L (manufactured by DIC Corporation), HP-7200 (manufactured by DIC Corporation), XD-1000 (manufactured by Nippon Kayaku Co., Ltd.), Celoxide 2021P (manufactured by DIC CORPORATION), Celoxide 20281 (manufactured by DIC CORPORATION), Syna-Epoxy28 (manufactured by SYNASIA), bis A type epoxy resin YD-128 (manufactured by Mitsubishi Chemical Corporation), bis F type epoxy Examples thereof include the resin EXA-830-CRP (manufactured by DIC Corporation). These may be used alone or in combination of two or more.

芳香族エポキシ樹脂を熱硬化性樹脂として使用してもよい。芳香族エポキシ樹脂として、例えば、ビスフェノールA型エポキシ樹脂、ビスフェノールF型エポキシ樹脂、ビスフェノールS型エポキシ樹脂、フェノールノボラック型エポキシ樹脂、クレゾールノボラック型エポキシ樹脂、ビスフェノールAノボラック型エポキシ樹脂、ビスフェノールFノボラック型エポキシ樹脂、スチルベン型エポキシ樹脂、トリアジン骨格含有エポキシ樹脂、フルオレン骨格含有エポキシ樹脂、トリフェノールフェノールメタン型エポキシ樹脂、ビフェニル型エポキシ樹脂、キシリレン型エポキシ樹脂、ビフェニルアラルキル型エポキシ樹脂、ナフタレン型エポキシ樹脂、多官能フェノール類及びアントラセン等の多環芳香族類のジグリシジルエーテル化合物が挙げられる。これらは一種を単独で使用してもよいし、二種以上を併用してもよい。 Aromatic epoxy resin may be used as a thermosetting resin. Examples of the aromatic epoxy resin include bisphenol A type epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolac type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak type epoxy resin, and bisphenol F novolak type epoxy. Resin, stylben type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenolphenol methane type epoxy resin, biphenyl type epoxy resin, xylylene type epoxy resin, biphenyl aralkyl type epoxy resin, naphthalene type epoxy resin, polyfunctional Examples thereof include diglycidyl ether compounds of polycyclic aromatics such as phenols and anthracene. These may be used alone or in combination of two or more.

(硬化剤)
硬化剤として、例えば、フェノール樹脂、エステル化合物、芳香族アミン、脂肪族アミン及び酸無水物が挙げられる。これらのうち、反応性及び経時安定性の観点から、フェノール樹脂が好ましく特に制限はない。
(Hardener)
Examples of the curing agent include phenolic resins, ester compounds, aromatic amines, aliphatic amines and acid anhydrides. Of these, phenolic resins are preferable and are not particularly limited from the viewpoint of reactivity and stability over time.

フェノール樹脂の市販品として、例えば、DIC(株)製のフェノライトKA及びTDシリーズ、三井化学(株)製のミレックスXLC−シリーズとXLシリーズ(例えば、ミレックスXLC−LL)、エア・ウォーター(株)製のHEシリーズ(例えば、HE100C−30)、明和化成(株)製のMEHC−7800シリーズ(例えばMEHC−7800−4S)が挙げられる。これらは一種を単独で使用してもよいし、二種以上を併用してもよい。耐熱性の観点から、85℃、85%RHの恒温恒湿槽に48時間投入後の吸水率が2質量%以下で、熱重量分析計(TGA)で測定した350℃での加熱質量減少率(昇温速度:5℃/分、雰囲気:窒素)が5質量%未満のものが好ましい。 Commercially available phenolic resin products include, for example, Phenolite KA and TD series manufactured by DIC Corporation, Millex XLC-series and XL series manufactured by Mitsui Kagaku Co., Ltd. (for example, Millex XLC-LL), and Air Water Inc. ) (For example, HE100C-30) and MEHC-7800 series (for example, MEHC-7800-4S) manufactured by Meiwa Kasei Co., Ltd. These may be used alone or in combination of two or more. From the viewpoint of heat resistance, the water absorption rate after being put into a constant temperature and humidity chamber at 85 ° C. and 85% RH for 48 hours is 2% by mass or less, and the heating mass reduction rate at 350 ° C. measured by a thermogravimetric analyzer (TGA). It is preferable that the temperature (heating rate: 5 ° C./min, atmosphere: nitrogen) is less than 5% by mass.

エポキシ樹脂とフェノール樹脂の配合量は、硬化性の観点から、それぞれエポキシ当量と水酸基当量の当量比が、好ましくは0.30/0.70〜0.70/0.30、より好ましくは0.35/0.65〜0.65/0.35、更に好ましくは0.40/0.60〜0.60/0.40、特に好ましくは0.45/0.55〜0.55/0.45である。配合比が上記範囲内であることで、硬化性及び流動性の両方を十分に高水準に達成しやすい。 From the viewpoint of curability, the compounding amount of the epoxy resin and the phenol resin has an equivalent ratio of the epoxy equivalent to the hydroxyl group, preferably 0.30 / 0.70 to 0.70 / 0.30, more preferably 0. 35 / 0.65 to 0.65 / 0.35, more preferably 0.40 / 0.60 to 0.60 / 0.40, and particularly preferably 0.45 / 0.55 to 0.55 / 0. 45. When the compounding ratio is within the above range, it is easy to achieve a sufficiently high level of both curability and fluidity.

(エラストマ)
エラストマとして、例えば、アクリル樹脂、ポリエステル樹脂、ポリアミド樹脂、ポリイミド樹脂、シリコーン樹脂、ポリブタジエン、アクリロニトリル、エポキシ変性ポリブタジエン、無水マレイン酸変性ポリブタジエン、フェノール変性ポリブタジエン及びカルボキシ変性アクリロニトリルが挙げられる。
(Elastomer)
Examples of the elastoma include acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, maleic anhydride-modified polybutadiene, phenol-modified polybutadiene and carboxy-modified acrylonitrile.

溶剤への溶解性及び流動性の観点から、エラストマとしてアクリル系樹脂が好ましく、更に、グリシジルアクリレート又はグリシジルメタクリレート等のエポキシ基又はグリシジル基を架橋性官能基として有する官能性モノマーを重合して得たエポキシ基含有(メタ)アクリル共重合体等のアクリル系樹脂がより好ましい。アクリル系樹脂のなかでもエポキシ基含有(メタ)アクリル酸エステル共重合体及びエポキシ基含有アクリルゴムが好ましく、エポキシ基含有アクリルゴムがより好ましい。エポキシ基含有アクリルゴムは、アクリル酸エステルを主成分とし、主として、ブチルアクリレートとアクリロニトリル等の共重合体、エチルアクリレートとアクリロニトリル等の共重合体などからなる、エポキシ基を有するゴムである。なお、アクリル系樹脂は、エポキシ基だけでなく、アルコール性又はフェノール性水酸基、カルボキシル基等の架橋性官能基を有していてもよい。 From the viewpoint of solubility in a solvent and fluidity, an acrylic resin is preferable as the elastoma, and a functional monomer having an epoxy group such as glycidyl acrylate or glycidyl methacrylate or a glycidyl group as a crosslinkable functional group is polymerized. Acrylic resins such as epoxy group-containing (meth) acrylic copolymers are more preferable. Among the acrylic resins, an epoxy group-containing (meth) acrylic acid ester copolymer and an epoxy group-containing acrylic rubber are preferable, and an epoxy group-containing acrylic rubber is more preferable. The epoxy group-containing acrylic rubber is a rubber having an epoxy group, which is mainly composed of an acrylic acid ester as a main component, a copolymer such as butyl acrylate and acrylonitrile, and a copolymer such as ethyl acrylate and acrylonitrile. The acrylic resin may have not only an epoxy group but also a crosslinkable functional group such as an alcoholic or phenolic hydroxyl group or a carboxyl group.

アクリル樹脂の市販品としては、ナガセケムテック(株)製のSG−70L、SG−708−6、WS−023 EK30、SG−280 EK23、SG−P3溶剤変更品(商品名、アクリルゴム、重量平均分子量:80万、Tg:12℃、溶剤はシクロヘキサノン)等が挙げられる。 Commercially available acrylic resin products include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, and SG-P3 solvent-changed products manufactured by Nagase Chemtech Co., Ltd. (trade name, acrylic rubber, weight). Average molecular weight: 800,000, Tg: 12 ° C., solvent is cyclohexanone) and the like.

アクリル樹脂のガラス転移温度(Tg)は−50〜50℃であることが好ましく、−30〜30℃であることがより好ましい。アクリル樹脂の重量平均分子量(Mw)は、10万〜300万であることが好ましく、50万〜200万であることがより好ましい。Mwがこの範囲のアクリル樹脂を熱硬化性樹脂組成物に配合することで、熱硬化性樹脂組成物をフィルム状に形成しやすく、フィルム状での強度、可撓性、タック性を適切に制御しやすい。これに加え、リフロー性及び埋込性の両方が向上する傾向にある。ここで、Mwは、ゲルパーミエーションクロマトグラフィー(GPC)で測定し、標準ポリスチレンによる検量線を用いて換算した値を意味する。なお、分子量分布の狭いアクリル樹脂を用いることにより、埋込性に優れ且つ高弾性の接着剤層を形成できる傾向にある。 The glass transition temperature (Tg) of the acrylic resin is preferably -50 to 50 ° C, more preferably -30 to 30 ° C. The weight average molecular weight (Mw) of the acrylic resin is preferably 100,000 to 3,000,000, more preferably 500,000 to 2,000,000. By blending an acrylic resin in this range with Mw in a thermosetting resin composition, the thermosetting resin composition can be easily formed into a film, and the strength, flexibility, and tackiness of the film can be appropriately controlled. It's easy to do. In addition to this, both reflowability and implantability tend to improve. Here, Mw means a value measured by gel permeation chromatography (GPC) and converted using a calibration curve made of standard polystyrene. By using an acrylic resin having a narrow molecular weight distribution, it tends to be possible to form an adhesive layer having excellent embedding property and high elasticity.

接着剤層20Aに含まれるアクリル樹脂の量は、エポキシ樹脂及びエポキシ樹脂硬化剤の合計100質量部に対して20〜200質量部であることが好ましく、30〜100質量部であることがより好ましい。この範囲にあると、成形時の流動性の制御、高温での取り扱い性及び埋込性をより一層良好にすることができる。 The amount of the acrylic resin contained in the adhesive layer 20A is preferably 20 to 200 parts by mass, more preferably 30 to 100 parts by mass with respect to 100 parts by mass of the total of the epoxy resin and the epoxy resin curing agent. .. Within this range, control of fluidity during molding, handleability at high temperature, and embedding property can be further improved.

(無機フィラー)
無機フィラーとして、例えば、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、窒化アルミニウム、ホウ酸アルミウィスカ、窒化ホウ素及び結晶性シリカ、非晶性シリカが挙げられる。これらは一種を単独で使用してもよいし、二種以上を併用してもよい。接着剤層20Aの熱伝導性を向上する観点から、無機フィラーとして、酸化アルミニウム、窒化アルミニウム、窒化ホウ素、結晶性シリカ又は非晶性シリカを含有することが好ましい。接着剤層20Aの溶融粘度の調整及び接着剤組成物にチキソトロピック性を付与する観点からは、水酸化アルミニウム、水酸化マグネシウム、炭酸カルシウム、炭酸マグネシウム、ケイ酸カルシウム、ケイ酸マグネシウム、酸化カルシウム、酸化マグネシウム、酸化アルミニウム、結晶性シリカ又は非晶性シリカを使用することが好ましい。
(Inorganic filler)
Examples of inorganic fillers include aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride and crystalline. Examples include silica and amorphous silica. These may be used alone or in combination of two or more. From the viewpoint of improving the thermal conductivity of the adhesive layer 20A, it is preferable to contain aluminum oxide, aluminum nitride, boron nitride, crystalline silica or amorphous silica as the inorganic filler. From the viewpoint of adjusting the melt viscosity of the adhesive layer 20A and imparting thixotropic properties to the adhesive composition, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, It is preferable to use magnesium oxide, aluminum oxide, crystalline silica or amorphous silica.

無機フィラーの平均粒径は、接着性を向上する観点から、0.005μm〜0.5μmが好ましく、0.05〜0.3μmがより好ましい。無機フィラーの表面は、溶剤及び樹脂成分との相溶性、並びに接着強度の観点から化学修飾されていることが好ましい。表面を化学修飾する材料として適したものにシランカップリング剤が挙げられる。シランカップリング剤の官能基の種類として、例えば、ビニル基、アクリロイル基、エポキシ基、メルカプト基、アミノ基、ジアミノ基、アルコキシ基、エトキシ基が挙げられる。 The average particle size of the inorganic filler is preferably 0.005 μm to 0.5 μm, more preferably 0.05 to 0.3 μm from the viewpoint of improving the adhesiveness. The surface of the inorganic filler is preferably chemically modified from the viewpoint of compatibility with the solvent and the resin component and adhesive strength. Silane coupling agents are suitable as materials for chemically modifying the surface. Examples of the functional group of the silane coupling agent include a vinyl group, an acryloyl group, an epoxy group, a mercapto group, an amino group, a diamino group, an alkoxy group and an ethoxy group.

接着剤層20Aの流動性及び破断性、並びに硬化後の引張弾性率及び接着力を制御する観点から、接着剤層20Aの樹脂成分100質量部に対して、無機フィラーの含有量は10〜90質量部であることが好ましく、10〜50質量部であることがより好ましい。無機フィラーの含有量が10質量部以上であることで、接着剤層20Aのダイシング性が向上しやすく、硬化後において十分な接着力を発揮しやすい。他方、無機フィラーの含有量が90質量部以下であることで、接着剤層20Aの流動性を十分に確保しやすく、硬化後において弾性率が過度に高くなることを抑制できる。 From the viewpoint of controlling the fluidity and breakability of the adhesive layer 20A, and the tensile elastic modulus and adhesive force after curing, the content of the inorganic filler is 10 to 90 with respect to 100 parts by mass of the resin component of the adhesive layer 20A. It is preferably parts by mass, more preferably 10 to 50 parts by mass. When the content of the inorganic filler is 10 parts by mass or more, the dicing property of the adhesive layer 20A is likely to be improved, and sufficient adhesive force is likely to be exhibited after curing. On the other hand, when the content of the inorganic filler is 90 parts by mass or less, it is easy to sufficiently secure the fluidity of the adhesive layer 20A, and it is possible to prevent the elastic modulus from becoming excessively high after curing.

(硬化促進剤)
硬化促進剤として、例えば、イミダゾール類及びその誘導体、有機リン系化合物、第二級アミン類、第三級アミン類、及び第四級アンモニウム塩が挙げられる。適度な反応性の観点からイミダゾール系の化合物が好ましい。イミダゾール類としては、2−メチルイミダゾール、1−ベンジル−2−メチルイミダゾール、1−シアノエチル−2−フェニルイミダゾール、1−シアノエチルー2−メチルイミダゾール等が挙げられる。これらは一種を単独で使用してもよいし、二種以上を併用してもよい。
(Hardening accelerator)
Examples of the curing accelerator include imidazoles and derivatives thereof, organic phosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. An imidazole-based compound is preferable from the viewpoint of appropriate reactivity. Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole and the like. These may be used alone or in combination of two or more.

接着剤層20Aにおける硬化促進剤の含有量は、エポキシ樹脂及びエポキシ樹脂硬化剤の合計100質量部に対して0.04〜3質量部が好ましく、0.04〜0.2質量部がより好ましい。硬化促進剤の添加量がこの範囲にあると、硬化性と信頼性を両立することができる。 The content of the curing accelerator in the adhesive layer 20A is preferably 0.04 to 3 parts by mass, more preferably 0.04 to 0.2 parts by mass with respect to 100 parts by mass of the total of the epoxy resin and the epoxy resin curing agent. .. When the amount of the curing accelerator added is in this range, both curability and reliability can be achieved.

以上、本開示に実施形態について詳細に説明したが、本発明は上記実施形態に限定されるものではない。例えば、上記実施形態においては、チップ埋込型半導体パッケージについて例示したが、本開示はワイヤ埋込型半導体パッケージ及びその他の半導体装置の製造に適用してもよい。 Although the embodiments have been described in detail in the present disclosure, the present invention is not limited to the above embodiments. For example, in the above embodiment, the chip-embedded semiconductor package has been exemplified, but the present disclosure may be applied to the manufacture of a wire-embedded semiconductor package and other semiconductor devices.

以下、実施例により本開示について更に詳しく説明するが、これらの実施例は本発明を制限するものではない。 Hereinafter, the present disclosure will be described in more detail by way of examples, but these examples do not limit the present invention.

(実施例1〜7及び比較例1〜2)
以下の材料を表1〜3に示した配合割合(質量部)で混合してワニスを調製した。溶媒としてシクロヘキサノンを使用し、ワニスの固形分割合は40質量%とした。100メッシュのフィルターでワニスをろ過するとともに真空脱泡した。ワニスを塗布するフィルムとして、離型処理が施されたポリエチレンテレフタレート(PET)フィルム(厚さ38μm)を準備した。真空脱泡後のワニスを、PETフィルムの離型処理が施された面上に塗布した。塗布したワニスを、90℃で5分間、続いて140℃で5分間の二段階で加熱乾燥した。こうして、実施例及び比較例に係る接着フィルムとして、PETフィルムと、その表面上に形成されたBステージ状態(半硬化状態)のフィルム状接着剤(厚さ110μm)とを備える積層フィルムをそれぞれ作製した。
(Examples 1 to 7 and Comparative Examples 1 to 2)
The following materials were mixed at the blending ratios (parts by mass) shown in Tables 1 to 3 to prepare a varnish. Cyclohexanone was used as a solvent, and the solid content ratio of the varnish was 40% by mass. The varnish was filtered with a 100 mesh filter and vacuum defoamed. As a film to which the varnish was applied, a polyethylene terephthalate (PET) film (thickness 38 μm) subjected to a mold release treatment was prepared. The varnish after vacuum defoaming was applied onto the mold-released surface of the PET film. The applied varnish was heated and dried in two steps at 90 ° C. for 5 minutes and then at 140 ° C. for 5 minutes. In this way, as the adhesive film according to the examples and the comparative examples, a laminated film having a PET film and a film-like adhesive (thickness 110 μm) in a B stage state (semi-cured state) formed on the surface thereof is produced. bottom.

[材料]
<エポキシ樹脂>
・(A1)…XD−1000:(商品名、日本化薬(株)製、シクロペンタジエン型エポキシ樹脂、脂環式構造、25℃において固体)
・(A2)…セロキサイド2021P:(商品名、ダイセル(株)製、脂環式構造、25℃において固体)
・(A3)…HP−7200L:(商品名、DIC(株)製、シクロペンタジエン型エポキシ樹脂、脂環式構造、25℃において固体)
・(A4)…EHPE3150(商品名、ダイセル(株)製、脂環式構造、25℃において固体)
・(A5)…VG3101L(商品名、(株)プリンテック製、多官能エポキシ樹脂、25℃において固体)
・(A6)…YDCN−700−10:(商品名、新日鉄住金化学(株)製、クレゾールノボラック型エポキシ樹脂、25℃において固体)
・(A7)…EXA−830CRP:(商品名、DIC(株)製、液状ビスフェノールF型エポキシ樹脂、25℃において液状)
<硬化剤>
・(B1)…XLC−LL:(商品名、三井化学(株)製、フェニルアラルキル型フェノール樹脂)
・(B2)…LF−4871:(商品名、DIC(株)製、BPAノボラック型フェノール樹脂)
・(B3)…HE−100C−30:(商品名、エア・ウォーター(株)製、フェニルアラキル型フェノール樹脂)
<エラストマ>
・(C1)…SG−P3溶剤変更品(商品名、ナガセケムテックス(株)製、アクリルゴム、重量平均分子量:80万、Tg:12℃、溶剤はシクロヘキサノン)
・(C2)…SG−70L:(商品名、ナガセケムテックス(株)製、アクリルゴム、重量平均分子量90万、酸価5mgKOH/g、Tg:−13℃)
<無機フィラー>
・SC2050−HLG:(商品名、(株)アドマテックス製、シリカフィラー分散液、平均粒径0.50μm)
<硬化促進剤>
・キュアゾール2PZ−CN:(商品名、四国化成工業(株)製、1−シアノエチル−2−フェニルイミダゾール)
[material]
<Epoxy resin>
(A1) ... XD-1000: (trade name, manufactured by Nippon Kayaku Co., Ltd., cyclopentadiene type epoxy resin, alicyclic structure, solid at 25 ° C)
(A2) ... Celoxide 2021P: (trade name, manufactured by Daicel Corporation, alicyclic structure, solid at 25 ° C)
(A3) ... HP-7200L: (trade name, manufactured by DIC Corporation, cyclopentadiene type epoxy resin, alicyclic structure, solid at 25 ° C.)
(A4) ... EHPE3150 (trade name, manufactured by Daicel Corporation, alicyclic structure, solid at 25 ° C)
(A5) ... VG3101L (trade name, manufactured by Printec Co., Ltd., polyfunctional epoxy resin, solid at 25 ° C)
(A6) ... YDCN-700-10: (Product name, manufactured by Nippon Steel & Sumikin Chemical Co., Ltd., cresol novolac type epoxy resin, solid at 25 ° C)
(A7) ... EXA-830CRP: (trade name, manufactured by DIC Corporation, liquid bisphenol F type epoxy resin, liquid at 25 ° C)
<Curing agent>
(B1) ... XLC-LL: (trade name, manufactured by Mitsui Chemicals, Inc., phenylaralkyl-type phenol resin)
(B2) ... LF-4871: (trade name, manufactured by DIC Corporation, BPA novolak type phenol resin)
(B3) ... HE-100C-30: (trade name, manufactured by Air Water Inc., phenylarakil type phenol resin)
<Elastomer>
(C1) ... SG-P3 solvent modified product (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight: 800,000, Tg: 12 ° C., solvent is cyclohexanone)
(C2) ... SG-70L: (trade name, manufactured by Nagase ChemteX Corporation, acrylic rubber, weight average molecular weight 900,000, acid value 5 mgKOH / g, Tg: -13 ° C)
<Inorganic filler>
SC2050-HLG: (trade name, manufactured by Admatex Co., Ltd., silica filler dispersion, average particle size 0.50 μm)
<Hardening accelerator>
-Curesol 2PZ-CN: (trade name, manufactured by Shikoku Chemicals Corporation, 1-cyanoethyl-2-phenylimidazole)

[フィルム状接着剤の評価]
実施例及び比較例に係るフィルム状接着剤について、表面自由エネルギー及びブリードの評価を行った。
[Evaluation of film-like adhesive]
The surface free energy and bleeding of the film-like adhesives according to Examples and Comparative Examples were evaluated.

<表面自由エネルギーの測定>
接触角計(協和界面科学(株)製:商品名DM−701)を使用して実施例及び比較例に係るフィルム状接着剤の表面自由エネルギーを測定した。溶媒として、水、ヨウ化メチレン及びα―ブロモナフタレンを使用し、各溶媒とフィルム状接着剤の接触角を測定した。液適量は0.5μLとし、接触角はθ/2法により求めた。得られた接触角の値を用いて、表面自由エネルギー解析ソフトFAMAS(商品名、協和界面科学(株)製)により表面自由ネルギーを算出した。表面自由エネルギーは北崎畑の式より算出した。また、以下のブリードの評価に使用した基材の表面自由ネルギーも同様にして測定した。表1〜3に結果を示す。
<Measurement of surface free energy>
The surface free energy of the film-like adhesive according to Examples and Comparative Examples was measured using a contact angle meter (manufactured by Kyowa Interface Science Co., Ltd .: trade name DM-701). Water, methylene iodide and α-bromonaphthalene were used as solvents, and the contact angle between each solvent and the film-like adhesive was measured. The appropriate amount of liquid was 0.5 μL, and the contact angle was determined by the θ / 2 method. Using the obtained contact angle values, the surface free energy was calculated by the surface free energy analysis software FAMAS (trade name, manufactured by Kyowa Interface Science Co., Ltd.). The surface free energy was calculated from the Kitazaki field formula. The surface free energy of the substrate used for the evaluation of the following bleeds was also measured in the same manner. The results are shown in Tables 1 to 3.

<ブリードの評価>
まず、ブリードの評価に使用する構造体であって、基板と、その表面にマウントされたチップとを備える構造体を以下のようにして準備した。すなわち、フィルム状接着剤HR9004−10(商品名、日立化成(株)製、厚さ10μm)を半導体ウェハ(直径:8インチ、厚さ:50μm)に70℃で貼り付けた。半導体ウェハ及びフィルム状接着剤を2.1×4.8mm角にダイシングすることによって、接着剤付きチップを得た。この接着剤付きチップを評価用基板に120℃、0.20MPa、2秒間の条件で圧着した。なお、評価用基板として、表面にソルダーレジストAUS308(商品名、大陽日酸(株)製)が塗布された基板(総厚:260μm)を使用した。
<Evaluation of bleed>
First, a structure used for bleed evaluation, which includes a substrate and a chip mounted on the surface thereof, was prepared as follows. That is, the film-like adhesive HR9004-10 (trade name, manufactured by Hitachi Chemical Co., Ltd., thickness 10 μm) was attached to a semiconductor wafer (diameter: 8 inches, thickness: 50 μm) at 70 ° C. A chip with an adhesive was obtained by dicing a semiconductor wafer and a film-like adhesive into a 2.1 × 4.8 mm square. The chip with the adhesive was pressure-bonded to the evaluation substrate at 120 ° C., 0.20 MPa, and 2 seconds. As the evaluation substrate, a substrate (total thickness: 260 μm) coated with solder resist AUS308 (trade name, manufactured by Taiyo Nippon Sanso Co., Ltd.) was used.

他方、実施例及び比較例に係るフィルム状接着剤(厚さ110μ)を半導体ウェハ(直径:8インチ、厚さ100μm)に70℃でそれぞれ貼り付けた。半導体ウェハ及びフィルム状接着剤を6×12.7mm角にダイシングすることによって、接着剤片付き半導体素子を得た。 On the other hand, the film-like adhesives (thickness 110 μm) according to Examples and Comparative Examples were attached to semiconductor wafers (diameter: 8 inches, thickness 100 μm) at 70 ° C., respectively. A semiconductor device with an adhesive piece was obtained by dicing a semiconductor wafer and a film-like adhesive into a 6 × 12.7 mm square.

上記構造体におけるチップがマウントされている位置に、接着剤片付き半導体素子を圧着した。圧着条件は120℃、0.20MPa、1.5秒間とした。なお、フィルム状接着剤の中央の位置にチップが埋め込まれるように位置合わせをした。このようにして作製した評価用試料を顕微鏡で観察し、半導体素子の端部からはみ出している樹脂組成物の最大距離(ブリード量)を測定した。表1〜3に結果を示す。 A semiconductor element with an adhesive piece was crimped to the position where the chip was mounted in the above structure. The crimping conditions were 120 ° C., 0.20 MPa, and 1.5 seconds. In addition, the position was adjusted so that the chip was embedded in the center position of the film-like adhesive. The evaluation sample thus prepared was observed with a microscope, and the maximum distance (bleed amount) of the resin composition protruding from the end of the semiconductor device was measured. The results are shown in Tables 1 to 3.

Figure 2020136903
Figure 2020136903

Figure 2020136903
Figure 2020136903

Figure 2020136903
Figure 2020136903

本開示によれば、圧着工程におけるブリードを十分に抑制できる半導体装置の製造方法が提供される。また、本開示によれば、この製造方法に適用可能なフィルム状接着剤及びダイシング・ダイボンディング一体型フィルムが提供される。 According to the present disclosure, there is provided a method for manufacturing a semiconductor device capable of sufficiently suppressing bleeding in a crimping process. Further, according to the present disclosure, a film-like adhesive and a dicing / die bonding integrated film applicable to this manufacturing method are provided.

1…基材フィルム、2…粘着剤層、8…ダイシング・ダイボンディング一体型フィルム、10…基板、20…第1の封止層(接着剤片の硬化物)、20A…接着剤層(フィルム状接着剤)、20P…接着剤片、30…積層体、50…構造体、100…半導体パッケージ(半導体装置)、W…ウェハ、Wa…第1の半導体素子(チップ)、Wb…第2の半導体素子 1 ... Base film, 2 ... Adhesive layer, 8 ... Dicing / die bonding integrated film, 10 ... Substrate, 20 ... First sealing layer (cured product of adhesive piece), 20A ... Adhesive layer (film) Adhesive), 20P ... Adhesive piece, 30 ... Laminate, 50 ... Structure, 100 ... Semiconductor package (semiconductor device), W ... Wafer, Wa ... First semiconductor element (chip), Wb ... Second Semiconductor element

Claims (15)

半導体素子と、前記半導体素子がマウントされる部材とを接着するためのフィルム状接着剤を準備する工程と、
前記部材の表面上に、前記フィルム状接着剤及び前記半導体素子を積層した状態で前記表面に対して前記半導体素子を圧着する工程と、
を含み、
前記フィルム状接着剤の表面自由エネルギーの値E(mJ/m)と前記部材の表面自由エネルギーの値E(mJ/m)の差の絶対値が6.0〜10.0の範囲である、半導体装置の製造方法。
A step of preparing a film-like adhesive for adhering a semiconductor element and a member on which the semiconductor element is mounted, and
A step of crimping the semiconductor element to the surface in a state where the film-like adhesive and the semiconductor element are laminated on the surface of the member.
Including
The absolute value of the difference between the film-like values of the surface free energy of the adhesive E 1 (mJ / m 2) and the value of surface free energy of the element E 2 (mJ / m 2) is 6.0 to 10.0 A range of methods for manufacturing semiconductor devices.
前記半導体装置がチップ埋込型半導体パッケージであり、
前記部材が、基板と、前記基板の表面上にマウントされたチップとを備える構造体であり、
前記フィルム状接着剤に前記チップが埋め込まれるように、前記基板の表面に対して前記半導体素子を圧着する、請求項1に記載の製造方法。
The semiconductor device is a chip-embedded semiconductor package.
The member is a structure including a substrate and a chip mounted on the surface of the substrate.
The manufacturing method according to claim 1, wherein the semiconductor element is pressure-bonded to the surface of the substrate so that the chip is embedded in the film-like adhesive.
前記半導体装置がワイヤ埋込型半導体パッケージであり、
前記部材が、基板と、前記基板の表面上に設けられたワイヤとを備える構造体であり、
前記フィルム状接着剤に前記ワイヤが埋め込まれるように、前記基板の表面に対して前記半導体素子を圧着する、請求項1に記載の製造方法。
The semiconductor device is a wire-embedded semiconductor package.
The member is a structure including a substrate and a wire provided on the surface of the substrate.
The manufacturing method according to claim 1, wherein the semiconductor element is pressure-bonded to the surface of the substrate so that the wire is embedded in the film-like adhesive.
前記フィルム状接着剤と、粘着剤層と、基材フィルムとを含み、これらがこの順序で積層されているダイシング・ダイボンディング一体型フィルムを準備する工程と、
前記ダイシング・ダイボンディング一体型フィルムの前記フィルム状接着剤とウェハとを貼り合わせる工程と、
前記フィルム状接着剤に貼り合わされた状態の前記ウェハを複数の半導体素子に個片化する工程と、
前記フィルム状接着剤が個片化されることによって形成された接着剤片と前記半導体素子と含む積層体を前記粘着剤層からピックアップする工程と、
前記部材に対して前記積層体を圧着する工程と、
加熱処理によって前記接着剤片を硬化させる工程と、
を含む、請求項1〜3のいずれか一項に記載の製造方法。
A step of preparing a dicing / die bonding integrated film containing the film-like adhesive, the pressure-sensitive adhesive layer, and the base film, which are laminated in this order.
The step of bonding the film-like adhesive of the dicing / die bonding integrated film to the wafer, and
A step of separating the wafer in a state of being bonded to the film-like adhesive into a plurality of semiconductor elements, and
A step of picking up a laminate containing the adhesive piece formed by individualizing the film-like adhesive and the semiconductor element from the pressure-sensitive adhesive layer.
The step of crimping the laminated body to the member and
The process of curing the adhesive piece by heat treatment and
The manufacturing method according to any one of claims 1 to 3.
熱硬化性樹脂組成物からなるフィルム状接着剤であって、
表面自由エネルギーの値Eが38〜41mJ/mである、フィルム状接着剤。
A film-like adhesive made of a thermosetting resin composition.
A film-like adhesive having a surface free energy value E 1 of 38 to 41 mJ / m 2.
25℃において液状であるエポキシ樹脂の含有率が前記熱硬化性樹脂組成物に含まれるエポキシ樹脂の全質量基準で5〜40質量%である、請求項5に記載のフィルム状接着剤。 The film-like adhesive according to claim 5, wherein the content of the epoxy resin liquid at 25 ° C. is 5 to 40% by mass based on the total mass of the epoxy resin contained in the thermosetting resin composition. 前記熱硬化性樹脂組成物が脂環式構造を有するエポキシ樹脂と、硬化剤と、エラストマとを含む、請求項5又は6に記載のフィルム状接着剤。 The film-like adhesive according to claim 5 or 6, wherein the thermosetting resin composition contains an epoxy resin having an alicyclic structure, a curing agent, and an elastomer. 脂環式構造を有するエポキシ樹脂の含有率が前記熱硬化性樹脂組成物に含まれるエポキシ樹脂の全質量基準で5〜30質量%である、請求項7に記載のフィルム状接着剤。 The film-like adhesive according to claim 7, wherein the content of the epoxy resin having an alicyclic structure is 5 to 30% by mass based on the total mass of the epoxy resin contained in the thermosetting resin composition. 前記硬化剤がフェノール樹脂である、請求項7又は8に記載のフィルム状接着剤。 The film-like adhesive according to claim 7 or 8, wherein the curing agent is a phenol resin. 前記エラストマがアクリル樹脂である、請求項7〜9のいずれか一項に記載のフィルム状接着剤。 The film-like adhesive according to any one of claims 7 to 9, wherein the elastomer is an acrylic resin. 前記熱硬化性樹脂組成物が無機フィラーを含む、請求項5〜10のいずれか一項に記載のフィルム状接着剤。 The film-like adhesive according to any one of claims 5 to 10, wherein the thermosetting resin composition contains an inorganic filler. 前記熱硬化性樹脂組成物が硬化促進剤を含む、請求項5〜11のいずれか一項に記載のフィルム状接着剤。 The film-like adhesive according to any one of claims 5 to 11, wherein the thermosetting resin composition contains a curing accelerator. 請求項5〜12のいずれか一項に記載のフィルム状接着剤と、
前記フィルム状接着剤の一方の表面上に設けられた基材フィルムと、
を備える接着フィルム。
The film-like adhesive according to any one of claims 5 to 12 and
A base film provided on one surface of the film-like adhesive and
Adhesive film with.
請求項5〜12のいずれか一項に記載のフィルム状接着剤と、粘着剤層と、基材フィルムとを備え、これらがこの順序で積層されている、ダイシング・ダイボンディング一体型フィルム。 A dicing / die bonding integrated film comprising the film-like adhesive according to any one of claims 5 to 12, a pressure-sensitive adhesive layer, and a base film, which are laminated in this order. 前記フィルム状接着剤を覆うように設けられた保護フィルムを更に備える、請求項14に記載のダイシング・ダイボンディング一体型フィルム。 The dicing / die bonding integrated film according to claim 14, further comprising a protective film provided so as to cover the film-like adhesive.
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