KR20210107709A - Semiconductor device manufacturing method, film adhesive and dicing and die-bonding integrated film - Google Patents

Abstract

A method for manufacturing a semiconductor device according to the present disclosure includes a step of preparing a film adhesive for adhering a semiconductor element and a member on which the semiconductor element is mounted, and laminating a film adhesive and a semiconductor element on the surface of the member. In the state, comprising the step of pressing the semiconductor element with respect to the surface of the member, the value of the surface free energy E ₁ (mJ/m ² ) of the _{film adhesive and the value of the surface free energy of the member E 2} (mJ / m ² ) has an absolute value in the range of 6.0 to 10.0.

Description

Semiconductor device manufacturing method, film adhesive and dicing and die-bonding integrated film

The present disclosure relates to a method for manufacturing a semiconductor device, a film adhesive, and a dicing and die-bonding integrated film.

DESCRIPTION OF RELATED ART Conventionally, in the manufacturing process of a semiconductor device, silver paste was mainly used for bonding of a semiconductor element and a support member. However, with the recent miniaturization and integration of semiconductor devices, there is a tendency that troubles in wire bonding tend to occur due to overflow of silver paste or inclination of semiconductor devices. When an adhesive composition is used instead of a silver paste, there exists a subject that it is difficult to make the thickness of an adhesive bond layer sufficiently uniform, or a void (void|hole) generate|occur|produces in an adhesive bond layer.

In recent years, a film-form adhesive material has come to be used for bonding a semiconductor element and a support member. For example, Patent Document 1 discloses a dicing and die-bonding combined use sheet comprising a base material, a wire embedding layer, and an insulating layer. By performing dicing in the state which bonded the insulating layer and wafer of this sheet|seat together, a semiconductor wafer and a wire embedding layer are separated into pieces. By thermocompression bonding the semiconductor element to the support member through the wire buried layer, the semiconductor element and the support member are joined.

By the way, as a form of a semiconductor device, a stack MCP (Multi Chip Package) having a configuration in which semiconductor elements are stacked in multiple stages is widespread. As an example of a stack MCP, a wire-embedded semiconductor package and a chip-embedded semiconductor package are mentioned (refer patent document 2). An adhesive film used for manufacturing a wire-embedded semiconductor package is called FOW (Film Over Wire). It is called FOD (Film Over Die) as an adhesive film used for manufacture of a chip-embedded semiconductor package. It is calculated|required that these adhesive films have the outstanding embedding property with respect to a wire or a semiconductor element.

Patent Document 1: Japanese Patent Application Laid-Open No. 2007-53240 Patent Document 2: Japanese Patent Application Laid-Open No. 2014-175459

As the miniaturization of semiconductor devices (chips) progresses, the pressing force per unit area tends to become excessively large in the pressing process of the manufacturing process of the semiconductor package. Thereby, there is a possibility that the adhesive composition constituting the adhesive film overflows from the semiconductor element (hereinafter, referred to as "bleed"), or the adhesive film is excessively deformed to cause electrical failure. In particular, in order to improve the embedding property of an adhesive film (FOD) used for manufacturing a chip-embedded semiconductor package, if the FOD composition is changed to increase the fluidity in the pressing process, bleed becomes remarkable. For example, the overflowing adhesive composition may rise to the top surface of the semiconductor device, which may cause electrical failure or wire bonding failure.

The present disclosure provides a method for manufacturing a semiconductor device capable of sufficiently suppressing bleed in the crimping step. Moreover, this indication provides the film adhesive and dicing die-bonding integrated film applicable to this manufacturing method.

A method for manufacturing a semiconductor device according to the present disclosure includes a step of preparing a film adhesive for adhering a semiconductor element and a member on which the semiconductor element is mounted, and laminating a film adhesive and a semiconductor element on the surface of the member. a step of pressing the semiconductor element against the surface of the member in a state of being, the value of the surface free energy of the film adhesive E ₁ (mJ/m ² ) and the value of the surface free energy of the member E ₂ (mJ/m ^{2 )} ), the absolute value of the difference is in the range of 6.0 to 10.0.

According to the manufacturing method, when _{the absolute value of the difference between E 1} and E ₂ is 6.0 or more, it is possible to suppress excessive wet diffusion of the film adhesive to the member in the crimping step, thereby sufficiently suppressing bleed. can do. On the other hand, when _{the absolute value of the difference between E 1} and E ₂ is 10.0 or less, excellent embedding properties can be achieved even if the member has a chip and/or a wire to be embedded.

By the method of the present disclosure, a chip embedded semiconductor package may be manufactured, or a wire embedded semiconductor package may be manufactured. When manufacturing a chip-embedded semiconductor package, as the member, a structure including a substrate and a chip mounted on the surface of the substrate is prepared, and the semiconductor element is pressed against the surface of the substrate so that the chip is embedded in the film adhesive. Do it. When manufacturing a wire-embedded semiconductor package, a structure including a substrate and a wire provided on the surface of the substrate is prepared as the member, and the semiconductor element is pressed against the surface of the substrate so that the wire is embedded in the film adhesive. do.

In the manufacturing method of this indication, you may use the dicing die-bonding integrated film which contains a film adhesive, an adhesive layer, and a base film, and these are laminated|stacked in this order. That is, the manufacturing method of the present disclosure includes a step of preparing a dicing and die bonding integrated film, a step of bonding a film adhesive of the dicing and die bonding integrated film and a wafer, and a wafer in a state bonded to the film adhesive is divided into a plurality of semiconductor elements, a step of picking up a laminate including an adhesive piece formed by separating the film adhesive and a semiconductor element from the pressure-sensitive adhesive layer, a step of crimping the laminate with respect to the member; , a step of curing the adhesive piece by heat treatment may be included.

The film adhesive according to the present disclosure is made of a thermosetting resin composition, and has a surface free energy value E ₁ of 38 to 41 mJ/m ² . E ₁ is as being within this range, it is easy to the difference absolute value of E ₁ and E ₂ in the range of 6.0 ~ 10.0. _{Further, the value E 2} of the surface free energy of the member is, for example, 46 to 48 mJ/m ² .

In order to prepare a film adhesive having a surface free energy value E ₁ in the above range, for example, one or more of the following plural matters regarding the composition of the thermosetting resin composition constituting the film adhesive you should hire

- In 25 degreeC, the content rate (based on the total mass of the epoxy resin contained in a thermosetting resin composition) of a liquid epoxy resin shall be 5-10 mass %.

- Thermosetting resin composition contains the epoxy resin which has an alicyclic structure, a hardening|curing agent (for example, a phenol resin), and an elastomer (for example, an acrylic resin).

- Let the content rate (based on the total mass of the epoxy resin contained in a thermosetting resin composition) of the epoxy resin which has an alicyclic structure be 5-30 mass %.

- The thermosetting resin composition contains an inorganic filler.

-The thermosetting resin composition contains a hardening accelerator.

The said film adhesive may comprise an adhesive film with a base film. That is, another aspect of this indication provides the adhesive film provided with the film adhesive and the base film provided on one surface of the said film adhesive. The said film adhesive may comprise a dicing die-bonding integrated film with an adhesive layer and a base film. That is, another aspect of the present disclosure provides a dicing and die-bonding integrated film comprising a film adhesive, an adhesive layer, and a base film, and laminated in this order. This dicing die-bonding integrated film may further be equipped with the protective film provided so that the film adhesive might be covered.

ADVANTAGE OF THE INVENTION According to this indication, the manufacturing method of the semiconductor device which can fully suppress the bleed in a crimping|compression-bonding process is provided. Moreover, according to this indication, the film adhesive and dicing die-bonding integrated film applicable to this manufacturing method are provided.

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows typically an example of a semiconductor package.
It is sectional drawing which shows typically an example of the laminated body which consists of an adhesive agent piece and a 2nd semiconductor element.
FIG. 3 is a cross-sectional view schematically illustrating a process of manufacturing the semiconductor package shown in FIG. 1 .
FIG. 4 is a cross-sectional view schematically illustrating a process of manufacturing the semiconductor package shown in FIG. 1 .
FIG. 5 is a cross-sectional view schematically illustrating a process of manufacturing the semiconductor package shown in FIG. 1 .
6 is a cross-sectional view schematically illustrating a process of manufacturing the semiconductor package shown in FIG. 1 .
7(a) to 7(e) are cross-sectional views schematically showing a process of manufacturing a laminate comprising an adhesive piece and a second semiconductor element.

EMBODIMENT OF THE INVENTION Hereinafter, embodiment of this indication is described in detail, referring drawings. In the following description, the same code|symbol is attached|subjected to the same or equivalent part, and the overlapping description is abbreviate|omitted. In addition, the positional relationship, such as up, down, left and right, shall be based on the positional relationship shown in drawing, unless it demonstrates in particular. In addition, the dimensional ratios in the drawings are not limited to the illustrated ratios. In addition, description of "(meth)acryl" in this specification means "acryl" and "methacryl" corresponding thereto.

<Semiconductor package>

BRIEF DESCRIPTION OF THE DRAWINGS It is sectional drawing which shows typically the chip embedding type semiconductor package which concerns on this embodiment. The semiconductor package 100 (semiconductor device) shown in this figure includes a substrate 10 , a first semiconductor element Wa (chip) mounted on the surface of the substrate 10 , and a first semiconductor element Wa The first sealing layer 20 sealing the 40) is provided.

The substrate 10 has circuit patterns 10a and 10b on its surface. From a viewpoint of suppressing the curvature of the semiconductor package 100, the thickness of the board|substrate 10 is 90-180 micrometers, for example, 90-140 micrometers may be sufficient as it. In addition, an organic substrate may be sufficient as the board|substrate 10, and metal substrates, such as a lead frame, may be sufficient as it.

In the present embodiment, the first semiconductor device Wa is a controller chip for driving the semiconductor package 100 . The first semiconductor element Wa is bonded to the circuit pattern 10a via an adhesive 15 , and is connected to the circuit pattern 10b via a first wire 11 . The shape of the first semiconductor element Wa in plan view is, for example, a quadrangle (square or rectangle). The length of one side of the first semiconductor element Wa is, for example, 6 mm or less, and may be 2 to 5 mm or 1 to 4 mm. The thickness of the 1st semiconductor element Wa is 10-150 micrometers, for example, and 20-100 micrometers may be sufficient as it.

The second semiconductor element Wb has a larger area than the first semiconductor element Wa. The second semiconductor element Wb is mounted on the substrate 10 with the first sealing layer 20 interposed therebetween so that the whole of the first semiconductor element Wa and a part of the circuit pattern 10b are covered. The shape of the second semiconductor element Wb in plan view is, for example, a quadrangle (square or rectangle). The length of one side of the second semiconductor element Wb is, for example, 20 mm or less, and may be 4 to 20 mm or 4 to 12 mm. The thickness of the second semiconductor element Wb is, for example, 10 to 170 µm, and may be 20 to 120 µm. The second semiconductor element Wb is connected to the circuit pattern 10b via the second wire 12 , and is sealed by the second sealing layer 40 .

The 1st sealing layer 20 consists of hardened|cured material of the adhesive bond piece 20P (refer FIG. 2). In addition, as shown in FIG. 2, the adhesive bond piece 20P and the 2nd semiconductor element Wb are substantially the same size. The laminate 30 shown in FIG. 2 consists of 20P of adhesive bond pieces and the 2nd semiconductor element Wb, and is also called a semiconductor element with an adhesive agent. The laminated body 30 is produced through a dicing process and a pickup process so that it may mention later (refer FIG. 7).

<Method for manufacturing semiconductor package>

A method of manufacturing the semiconductor package 100 will be described. First, as shown in FIG. 3 , a structure 50 including a substrate 10 and a first semiconductor element Wa mounted thereon is fabricated. That is, the first semiconductor element Wa is disposed on the surface of the substrate 10 through the adhesive 15 . Thereafter, the first semiconductor element Wa and the circuit pattern 10b are electrically connected with the first wire 11 .

Next, as shown in FIG. 4, the adhesive agent piece 20P of the laminated body 30 prepared separately is crimped|bonded with respect to the board|substrate 10. As shown in FIG. Accordingly, the first semiconductor element Wa and the first wire 11 are embedded in the adhesive piece 20P. _{In the crimping step, the value E 1} (mJ/m ² ) of the surface free energy of the adhesive piece 20P and the value E of the surface free energy of the substrate 10 from the viewpoint of suppressing bleed and achieving excellent embedding properties The absolute value of the difference of ₂ (mJ/m ^{2 ) ranges from 6.0 to 10.0.} When _{the absolute value of the difference between E 1} and E ₂ is 6.0 or more, it is possible to suppress excessive wet diffusion of the adhesive piece 20P with respect to the substrate 10 in the crimping step, thereby sufficiently suppressing bleed. have. On the other hand, when the difference absolute value of E ₁ and E ₂ as 10.0 or lower, can achieve excellent burial properties. The lower limit of the absolute value of the difference between E ₁ and E ₂ is, may be a 6.6, 7.0 or 7.6 may be. The upper limit of the difference absolute value of E ₁ and E ₂ is, may be a 9.6, 9.0 or 8.6 may be. In addition, the difference absolute value of E ₁ and E ₂ is the range is, and E ₁ is larger than the E _2, E ₂ is E ₁ is larger than the.

Value E ₁ of the surface free energy of the adhesive part (20P), for example, 37 to a 41mJ / m ^2, or may be 38 ~ 40mJ / m ^2. E ₁ is as being within this range, it is easy to the difference absolute value of E ₁ and E ₂ in the range of 6.0 ~ 10.0.

_{The value E 2} of the surface free energy of the substrate 10 is, for example, 30 to 50 mJ/m ² , and may be 32 to 49 mJ/m ² or 34 to 48 mJ/m ^{2 .} E ₂ is as being within this range, it is easy to the difference absolute value of E ₁ and E ₂ in the range of 6.0 ~ 10.0. The value of E ₂ can be adjusted by subjecting the surface of the substrate 10 to a region where the adhesive piece 20P is in contact with and in the vicinity thereof, if necessary, by modifying the region. More specifically, by carrying out or using a solder resist for imparting polarity plasma treatment may adjust the values of E _2.

The thickness of the adhesive piece 20P may be set suitably according to the thickness of the 1st semiconductor element Wa, etc., for example, may be 20-200 micrometers, and may be 30-200 micrometers or 40-150 micrometers. By making the thickness of the adhesive bond piece 20P into the said range, the space|interval (distance G in FIG. 5) of the 1st semiconductor element Wa and the 2nd semiconductor element Wb can fully be ensured. It is preferable that the distance G is 50 micrometers or more, for example, and 50-75 micrometers or 50-80 micrometers may be sufficient as it.

It is preferable to perform crimping|bonding with respect to the board|substrate 10 of the adhesive bond piece 20P over 0.5 to 3.0 second on the conditions of 80-180 degreeC and 0.01-0.50 MPa, for example. Next, the adhesive piece 20P is hardened by heating. It is preferable to perform this hardening process over 5 minutes or more on conditions of 60-175 degreeC and 0.01-1.0 MPa, for example. Thereby, the 1st semiconductor element Wa is sealed with the hardened|cured material (1st sealing layer 20) of the adhesive bond piece 20P (refer FIG. 6). You may perform the hardening process of the adhesive bond piece 20P in a pressurized atmosphere from a viewpoint of reduction of a void. After electrically connecting the second semiconductor element Wb and the circuit pattern 10b with the second wire 12 , the second semiconductor element Wb is sealed by the second sealing layer 40 to form the semiconductor package 100 . ) is completed (see FIG. 1).

<Method for manufacturing semiconductor element with adhesive>

An example of the manufacturing method of the laminated body 30 (semiconductor element with an adhesive) shown in FIG. 2 is demonstrated, referring FIG.7(a)-(e). First, the dicing and die-bonding integrated film 8 (hereinafter referred to as "film 8" in some cases) is placed in a predetermined apparatus (not shown). The film 8 is equipped with the base film 1, the adhesive layer 2, and the adhesive bond layer 20A (film-like adhesive agent) in this order. The base film 1 is a polyethylene terephthalate film (PET film), for example. The semiconductor wafer W is a thin semiconductor wafer with a thickness of 10-100 micrometers, for example. Single crystal silicon may be sufficient as the semiconductor wafer W, and compound semiconductors, such as polycrystalline silicon, various ceramics, and gallium arsenide, may be sufficient as it. Moreover, the film 8 may further be equipped with the protective film (not shown) provided so that 20 A of adhesive bond layers may be covered.

As shown to Fig.7 (a) and (b), the film 8 is affixed so that 20 A of adhesive bond layers may contact with one surface of the semiconductor wafer W. This process becomes like this. Preferably it is 50-120 degreeC, More preferably, it implements on the temperature condition of 60-100 degreeC. When the temperature is 50°C or higher, good adhesion between the semiconductor wafer W and the adhesive layer 20A can be obtained, and when the temperature is 120°C or lower, excessive flow of the adhesive layer 20A is suppressed in this step.

As shown in FIG.7(c), the semiconductor wafer W, the adhesive layer 2, and the adhesive bond layer 20A are diced. Thereby, the semiconductor wafer W is divided into pieces, and it becomes the semiconductor element Wb. The adhesive layer 20A is also divided into pieces to become the adhesive piece 20P. As a dicing method, the method using a rotating blade or a laser is mentioned. In addition, you may thin it by grinding the semiconductor wafer W prior to dicing of the semiconductor wafer W.

Next, when the pressure-sensitive adhesive layer 2 is UV-curable, for example, as shown in FIG. The adhesive force between (2) and the adhesive bond piece 20P is reduced. After ultraviolet irradiation, as shown in FIG. 7(e) , the semiconductor element Wa is separated from each other by expanding the base film 1 under normal temperature or cooling conditions, and the pressure-sensitive adhesive layer is pushed up by the needle 42 . While peeling the adhesive bond piece 20P of the laminated body 30 from (2), the laminated body 30 is sucked up by the suction collet 44 and picked up. Thus, the obtained laminated body 30 is used for manufacture of the semiconductor package 100, as shown in FIG.

<Dicing and die-bonding integrated film and its manufacturing method>

The dicing and die-bonding integrated film 8 shown to Fig.7 (a) and its manufacturing method are demonstrated. As mentioned above, the film 8 is equipped with the base film 1 (for example, PET film), the adhesive layer 2, and the adhesive bond layer 20A (adhesive film) in this order. The manufacturing method of the film 8 is a process of applying a varnish of a thermosetting resin composition containing an epoxy resin etc. on a film (not shown), and the adhesive layer 20A by heating and drying the applied varnish at 50 to 150 ° C. The process of forming and the process of bonding together 20 A of adhesive bond layers and the adhesive layer 2 are included.

The adhesive bond layer 20A is formed through the process of coating the varnish containing an epoxy resin, a hardening|curing agent, and an elastomer on a film, for example, and the process of drying the coating film formed on the film. The varnish may further contain an inorganic filler, a hardening accelerator, etc. as needed. A varnish can be prepared by mixing or kneading|mixing materials, such as an epoxy resin, in a solvent. Mixing or kneading|mixing can be performed combining these suitably using dispersers, such as a normal stirrer, a grinder, three rolls, and a ball mill. In addition, the detail of a varnish is mentioned later.

The film to which the varnish is applied is not particularly limited, and for example, a polyester film, a polypropylene film (OPP film, etc.), a polyethylene terephthalate film, a polyimide film, a polyetherimide film, a polyethernaphthalate film, A methylpentene film is mentioned.

As a method of apply|coating a varnish to a film, a well-known method can be used, For example, the knife coat method, the roll coat method, the spray coat method, the gravure coat method, the bar coat method, and the curtain coat method are mentioned. The conditions of heat drying should just be conditions in which the used solvent fully volatilizes, For example, it can heat and perform at 50-150 degreeC for 1 to 30 minutes. Heat drying may be performed by heating up stepwise at the temperature within the range of 50-150 degreeC. By volatilizing the solvent contained in a varnish by heat-drying, the laminated|multilayer film of a film and 20 A of adhesive bond layers can be obtained.

The film 8 can be obtained by bonding together the laminated|multilayer film obtained as mentioned above, and a dicing film (laminated body of the base film 1 and the adhesive layer 2). As the base film 1, plastic films, such as a polytetrafluoroethylene film, a polyethylene terephthalate film, a polyethylene film, a polypropylene film, a polymethylpentene film, and a polyimide film, are mentioned, for example. Moreover, as for the base film 1, surface treatment, such as primer application|coating, UV treatment, a corona discharge treatment, a grinding|polishing process, and an etching process, may be performed as needed. A UV curing type may be sufficient as the adhesive layer 2, and a pressure sensitive adhesive layer 2 may be sufficient as it. As an adhesive which comprises the adhesive layer 2, what is necessary is just to use the adhesive used for the dicing film conventionally. The thickness of the adhesive layer 2 is, for example, 60-200 micrometers from a viewpoint of economical efficiency and film handling property, and 70-170 micrometers may be sufficient as it.

<Varnish for forming adhesive layer>

The varnish for forming the adhesive bond layer 20A is demonstrated in detail. In addition, the adhesive bond piece 20P is what divided the adhesive bond layer 20A into pieces, and both consist of the same thermosetting resin composition. The adhesive layer 20A and the adhesive piece 20P are in a state of semi-curing (B stage) because they have undergone heat treatment for volatilizing the solvent, and are in a state of a fully cured product (stage C) by subsequent curing treatment. .

As mentioned above, the varnish for adhesive bond layer formation contains an epoxy resin, a hardening|curing agent, and an elastomer, and also contains an inorganic filler, a hardening accelerator, etc. as needed. The solvent for preparing the varnish is not limited as long as it can dissolve, knead or disperse the respective components uniformly, for example, ketone solvents such as acetone, methyl ethyl ketone, methyl isobutyl ketone, and cyclohexanone. , dimethylformamide, dimethylacetamide, Nmethylpyrrolidone, toluene, and xylene can be used. It is preferable to use methyl ethyl ketone or cyclohexanone from the viewpoint of a fast drying rate and low price.

(epoxy resin)

Although there is no restriction|limiting in particular in a structure as an epoxy resin, From a compatible viewpoint, it is preferable to have an alicyclic structure. _{From the viewpoint of setting the value E 1} of the surface free energy of the adhesive layer 20A in the range of 38 to 41 mJ/m ² , the content of the epoxy resin having an alicyclic structure is the total mass of the epoxy resin contained in the adhesive layer 20A. As a reference, for example, it is 5-40 mass %, and 6-35 mass % or 7-34 mass % may be sufficient. From the same viewpoint, the content rate of the liquid epoxy resin at 25°C is, for example, 5 to 30 mass%, 7 to 25 mass% or 8 to, based on the total mass of the epoxy resin contained in the adhesive layer 20A. 23 mass % may be sufficient.

As a commercial item of an epoxy resin, for example, dicyclopentadiene type epoxy resin HP-7200L (manufactured by DIC Corporation), HP-7200 (manufactured by DIC Corporation), XD-1000 (Nippon Kayaku Corporation) ), Celoxide 2021P (manufactured by Daicel Corporation), Celoxide 20281 (manufactured by Daicel Corporation), Syna-Epoxy28 (manufactured by SYANASIA), Bis A-type epoxy resin YD-128 (manufactured by Mitsubishi Chemical Corporation) ) and bis-F type epoxy resin EXA-830-CRP (manufactured by DIC Corporation). These may be used individually by 1 type, and may use 2 or more types together.

You may use an aromatic epoxy resin as a thermosetting resin. As an aromatic epoxy resin, For example, bisphenol A epoxy resin, bisphenol F type epoxy resin, bisphenol S type epoxy resin, phenol novolak type epoxy resin, cresol novolak type epoxy resin, bisphenol A novolak type epoxy resin, bisphenol F Novolak-type epoxy resin, stilbene-type epoxy resin, triazine skeleton-containing epoxy resin, fluorene skeleton-containing epoxy resin, triphenylphenol methane-type epoxy resin, biphenyl-type epoxy resin, xylylene-type epoxy resin, biphenyl aralkyl type and diglycidyl ether compounds of polycyclic aromatics such as epoxy resins, naphthalene-type epoxy resins, polyfunctional phenols and anthracene. These may be used individually by 1 type, and may use 2 or more types together.

(hardener)

As a hardening|curing agent, a phenol resin, an ester compound, an aromatic amine, an aliphatic amine, and an acid anhydride are mentioned, for example. Among these, a phenol resin is preferable from a viewpoint of reactivity and stability with time, and there is no restriction|limiting in particular.

As a commercial item of a phenol resin, For example, DIC Co., Ltd. product Phenolite KA and TD series, Mitsui Chemical Co., Ltd. Milex XLC-series and XL series (for example, Milex XLC-LL) , Air-Water Co., Ltd. HE series (for example, HE100C-30), and Meiwa Kasei Co., Ltd. MEHC-7800 series (for example, MEHC-7800-4S) are mentioned. These may be used individually by 1 type, and may use 2 or more types together. From the viewpoint of heat resistance, the water absorption rate after being put in a constant temperature and humidity chamber at 85°C and 85% RH for 48 hours is 2% by mass or less, and the heating mass reduction rate at 350°C (temperature increase rate) measured by a thermogravimetric analyzer (TGA). : 5°C/min, atmosphere: nitrogen) is preferably less than 5% by mass.

As for the compounding quantity of an epoxy resin and a phenol resin, from a viewpoint of sclerosis|hardenability, the equivalent ratio of an epoxy equivalent and a hydroxyl equivalent, respectively, Preferably it is 0.30/0.70-0.70/0.30, More preferably, 0.35/0.65-0.65/0.35, More preferably is 0.40/0.60 to 0.60/0.40, particularly preferably 0.45/0.55 to 0.55/0.45. When a compounding ratio is in the said range, it is easy to achieve both sclerosis|hardenability and fluidity|liquidity at a sufficiently high level.

(elastomer)

As the elastomer, for example, acrylic resin, polyester resin, polyamide resin, polyimide resin, silicone resin, polybutadiene, acrylonitrile, epoxy-modified polybutadiene, maleic anhydride-modified polybutadiene , phenol-modified polybutadiene, and carboxy-modified acrylonitrile.

From the viewpoint of solubility in solvent and fluidity, an acrylic resin is preferable as the elastomer, and a functional monomer having an epoxy group or a glycidyl group such as glycidyl acrylate or glycidyl methacrylate as a crosslinkable functional group is polymerized. Acrylic resins, such as the obtained epoxy-group containing (meth)acrylic copolymer, are more preferable. Among the acrylic resins, epoxy group-containing (meth)acrylic acid ester copolymers and epoxy group-containing acrylic rubbers are preferable, and epoxy group-containing acrylic rubbers are more preferable. The epoxy group-containing acrylic rubber has an acrylic acid ester as a main component, and is mainly composed of a copolymer such as butyl acrylate and acrylonitrile, a copolymer such as ethyl acrylate and acrylonitrile, and the like, and is a rubber having an epoxy group. Moreover, acrylic resin may have crosslinkable functional groups, such as not only an epoxy group but alcoholic or phenolic hydroxyl group, and a carboxyl group.

Examples of commercially available acrylic resins include SG-70L, SG-708-6, WS-023 EK30, SG-280 EK23, SG-P3 solvent modified products manufactured by Nagase Chemtex Co., Ltd. (trade name, acrylic rubber, weight average molecular weight: 800,000, Tg: 12 degreeC, the solvent is cyclohexanone) etc. are mentioned.

It is preferable that it is -50-50 degreeC, and, as for the glass transition temperature (Tg) of an acrylic resin, it is more preferable that it is -30-30 degreeC. It is preferable that it is 100,000-3 million, and, as for the weight average molecular weight (Mw) of an acrylic resin, it is more preferable that it is 500,000-2 million. When Mw mixes the acrylic resin in this range with the thermosetting resin composition, it is easy to form the thermosetting resin composition in the form of a film, and it is easy to appropriately control the strength, flexibility, and tackability on the film. In addition to this, both the reflow property and the embedding property tend to improve. Here, Mw means the value measured by gel permeation chromatography (GPC) and converted using the calibration curve by standard polystyrene. Moreover, it exists in the tendency which is excellent in embedding property and can form the adhesive bond layer of high elasticity by using an acrylic resin with a narrow molecular weight distribution.

It is preferable that it is 20-200 mass parts with respect to a total of 100 mass parts of an epoxy resin and an epoxy resin hardening|curing agent, and, as for the quantity of the acrylic resin contained in 20 A of adhesive bond layers, it is more preferable that it is 30-100 mass parts. If it exists in this range, control of the fluidity|liquidity at the time of shaping|molding, handling at high temperature, and embedding property can be made further more favorable.

(inorganic filler)

As the inorganic filler, for example, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, aluminum nitride, aluminum borate whisker, boron nitride and crystalline silica, non and qualitative silica. These may be used individually by 1 type, and may use 2 or more types together. From the viewpoint of improving the thermal conductivity of the adhesive layer 20A, it is preferable to contain aluminum oxide, aluminum nitride, boron nitride, crystalline silica or amorphous silica as the inorganic filler. From the viewpoint of adjusting the melt viscosity of the adhesive layer 20A and imparting thixotropic properties to the adhesive composition, aluminum hydroxide, magnesium hydroxide, calcium carbonate, magnesium carbonate, calcium silicate, magnesium silicate, calcium oxide, magnesium oxide, aluminum oxide, It is preferable to use crystalline silica or amorphous silica.

From a viewpoint of improving adhesiveness, 0.005 micrometers - 0.5 micrometers are preferable and, as for the average particle diameter of an inorganic filler, 0.05-0.3 micrometers are more preferable. It is preferable that the surface of an inorganic filler is chemically modified from a viewpoint of compatibility with a solvent and a resin component, and adhesive strength. A silane coupling agent is mentioned as a material suitable as a material which chemically modifies the surface. As a kind of functional group of a silane coupling agent, a vinyl group, an acryloyl group, an epoxy group, a mercapto group, an amino group, a diamino group, an alkoxy group, and an ethoxy group are mentioned, for example.

From the viewpoint of controlling the fluidity and fracture property of the adhesive layer 20A, and the tensile modulus and adhesive force after curing, the content of the inorganic filler is preferably 10 to 90 parts by mass with respect to 100 parts by mass of the resin component of the adhesive layer 20A. And, it is more preferable that it is 10-50 mass parts. When content of an inorganic filler is 10 mass parts or more, the dicing property of 20 A of adhesive bond layers improves easily, and it is easy to exhibit sufficient adhesive force after hardening. On the other hand, when content of an inorganic filler is 90 mass parts or less, it is easy to fully ensure the fluidity|liquidity of 20 A of adhesive bond layers, and it can suppress that an elasticity modulus becomes high after hardening excessively.

(curing accelerator)

Examples of the curing accelerator include imidazoles and derivatives thereof, organophosphorus compounds, secondary amines, tertiary amines, and quaternary ammonium salts. From the viewpoint of appropriate reactivity, an imidazole-based compound is preferable. Examples of the imidazoles include 2-methylimidazole, 1-benzyl-2-methylimidazole, 1-cyanoethyl-2-phenylimidazole, 1-cyanoethyl-2-methylimidazole, and the like. can be heard These may be used individually by 1 type, and may use 2 or more types together.

0.04-3 mass parts is preferable with respect to a total of 100 mass parts of an epoxy resin and an epoxy resin hardening|curing agent, and, as for content of the hardening accelerator in 20 A of adhesive bond layers, 0.04-0.2 mass part is more preferable. When the addition amount of a hardening accelerator exists in this range, sclerosis|hardenability and reliability can be made compatible.

As mentioned above, although embodiment of this indication was described in detail, this invention is not limited to the said embodiment. For example, in the said embodiment, although it illustrated about a chip embedding type semiconductor package, you may apply this indication to manufacture of a wire embedding type semiconductor package and other semiconductor devices.

Example

Hereinafter, the present disclosure will be described in more detail by way of Examples, but these Examples do not limit the present invention.

(Examples 1-7 and Comparative Examples 1-2)

The following materials were mixed at the compounding ratios (part by mass) shown in Tables 1-3, and the varnish was prepared. Cyclohexanone was used as a solvent, and the solid content ratio of the varnish was 40 mass %. The varnish was filtered and vacuum defoamed with a 100-mesh filter. As a film to which the varnish was applied, a polyethylene terephthalate (PET) film (thickness 38 µm) to which a release treatment was given was prepared. The varnish after vacuum defoaming was apply|coated on the surface to which the release process of PET film was given. The apply|coated varnish was heat-dried at 90 degreeC for 5 minutes, then, at 140 degreeC for 5 minutes, two steps. In this way, as adhesive films according to Examples and Comparative Examples, laminated films comprising a PET film and a B-stage state (semi-cured state) film adhesive (thickness 110 µm) formed on the surface were respectively produced.

[ingredient]

<Epoxy resin>

・(A1)… XD-1000: (trade name, manufactured by Nippon Kayaku Co., Ltd., cyclopentadiene type epoxy resin, alicyclic structure, solid at 25°C)

・(A2)… Celoxide 2021P: (trade name, manufactured by Daicel Co., Ltd., alicyclic structure, solid at 25°C)

・(A3)… HP-7200L: (trade name, manufactured by DIC Corporation, cyclopentadiene type epoxy resin, alicyclic structure, solid at 25°C)

・(A4)… EHPE3150 (trade name, manufactured by Daicel Co., Ltd., alicyclic structure, solid at 25°C)

・(A5)… VG3101L (trade name, manufactured by Printec Co., Ltd., polyfunctional epoxy resin, solid at 25°C)

・(A6)… YDCN-700-10: (trade name, manufactured by Shin-Nittetsu Sumikin Chemical Co., Ltd., cresol novolak-type epoxy resin, solid at 25°C)

・(A7)… EXA-830CRP: (trade name, manufactured by DIC Corporation, liquid bisphenol F-type epoxy resin, liquid at 25°C)

<curing agent>

· (B1)… XLC-LL: (trade name, manufactured by Mitsui Chemical Co., Ltd., phenyl aralkyl type phenol resin)

・(B2)… LF-4871: (trade name, manufactured by DIC Co., Ltd., BPA novolac type phenolic resin)

・(B3)… HE-100C-30: (trade name, manufactured by Air Water Co., Ltd., phenyl aralkyl type phenol resin)

<Elastomer>

· (C1)… SG-P3 solvent modified product (trade name, manufactured by Nagase Chemtex Co., Ltd., acrylic rubber, weight average molecular weight: 800,000, Tg: 12°C, solvent: cyclohexanone)

· (C2)… SG-70L: (trade name, manufactured by Nagase Chemtex Co., Ltd., acrylic rubber, weight average molecular weight 900,000, acid value 5 mgKOH/g, Tg: -13°C)

<Weapon Filler>

SC2050-HLG: (trade name, manufactured by Admatex Co., Ltd., silica filler dispersion, average particle size 0.50 μm)

<curing accelerator>

Qazole 2PZ-CN: (trade name, manufactured by Shikoku Kasei Kogyo Co., Ltd., 1-cyanoethyl-2-phenylimidazole)

[Evaluation of film adhesive]

For the film adhesives according to Examples and Comparative Examples, surface free energy and bleed were evaluated.

<Measurement of surface free energy>

The surface free energy of the film adhesives according to Examples and Comparative Examples was measured using a contact angle meter (manufactured by Kyowa Chemical Co., Ltd.: trade name DM-701). As solvents, water, methylene iodide and ?-bromonaphthalene were used, and the contact angle between each solvent and the film adhesive was measured. The droplet amount was 0.5 µL, and the contact angle was determined by the θ/2 method. Using the value of the obtained contact angle, the surface free energy was computed by surface free energy analysis software FAMAS (trade name, Kyowa Kaimen Chemical Co., Ltd. product). The surface free energy was calculated from the formula of Hata Kitazaki. In addition, the surface free energy of the base material used for the following evaluation of bleed was carried out similarly, and it measured. Tables 1-3 show the results.

<Evaluation of Bleed>

First, it is a structure used for evaluation of bleed, and the structure provided with the board|substrate and the chip|tip mounted on the surface was prepared as follows. That is, film adhesive HR9004-10 (trade name, Hitachi Chemical Co., Ltd. product, thickness 10 micrometers) was affixed on the semiconductor wafer (diameter: 8 inches, thickness: 50 micrometers) at 70 degreeC. A chip with an adhesive was obtained by dicing the semiconductor wafer and the film adhesive to a square of 2.1 x 4.8 mm. This adhesive-attached chip|tip was crimped|bonded to the board|substrate for evaluation under conditions of 120 degreeC, 0.20 MPa, and 2 second. In addition, as a board|substrate for evaluation, the board|substrate (total thickness: 260 micrometers) by which the soldering resist AUS308 (trade name, Taiyo Nissan Co., Ltd. product) was apply|coated on the surface was used.

On the other hand, the film adhesives (thickness 110 micrometers) which concern on an Example and a comparative example were respectively affixed at 70 degreeC on the semiconductor wafer (diameter: 8 inches, thickness 100 micrometers). A semiconductor element with an adhesive piece was obtained by dicing a semiconductor wafer and a film adhesive to 6x12.7 mm square.

The semiconductor element with an adhesive piece was crimped|bonded at the position where the chip|tip in the said structure is mounted. Compression-bonding conditions were made into 120 degreeC, 0.20 MPa, and 1.5 second. Further, alignment was performed so that the chip was embedded in the central position of the film adhesive. Thus, the produced sample for evaluation was observed with the microscope, and the maximum distance (bleed amount) of the resin composition overflowing from the edge part of a semiconductor element was measured. Tables 1-3 show the results.

[Table 1]

[Table 2]

[Table 3]

Industrial Applicability

ADVANTAGE OF THE INVENTION According to this indication, the manufacturing method of the semiconductor device which can fully suppress the bleed in a crimping|compression-bonding process is provided. Moreover, according to this indication, the film adhesive and dicing die-bonding integrated film applicable to this manufacturing method are provided.

One… base film
2… adhesive layer
8… Dicing and die-bonding integrated film
10… Board
20… 1st sealing layer (hardened|cured material of adhesive piece)
20A… Adhesive layer (film-like adhesive)
20P… adhesive piece
30… laminate
50… structure
100… Semiconductor package (semiconductor device)
W… wafer
Wow… First semiconductor element (chip)
Wb… second semiconductor element

Claims (15)

A step of preparing a film adhesive for adhering a semiconductor element and a member on which the semiconductor element is mounted;
a step of pressing the semiconductor element against the surface in a state in which the film adhesive and the semiconductor element are laminated on the surface of the member;
In the range of the difference absolute value of the value of the adhesive surface free energy of the film E ₁ (mJ / m ²⁾ and the value of surface free energy of the element E ^₂ (mJ / m ₂₎ is 6.0 ~ 10.0, the semiconductor device manufacturing method. The method according to claim 1,
The semiconductor device is a chip-embedded semiconductor package,
wherein the member is a structure including a substrate and a chip mounted on the surface of the substrate;
A manufacturing method of pressing the semiconductor element against the surface of the substrate so that the chip is embedded in the film adhesive. The method according to claim 1,
The semiconductor device is a wire-embedded semiconductor package,
The member is a structure including a substrate and a wire provided on a surface of the substrate,
A manufacturing method of pressing the semiconductor element against the surface of the substrate so that the wire is embedded in the film adhesive. 4. The method according to any one of claims 1 to 3,
A step of preparing a dicing and die-bonding integrated film comprising the film adhesive, the pressure-sensitive adhesive layer, and a base film, in which these are laminated in this order;
bonding the film adhesive of the dicing die-bonding integrated film and the wafer;
a step of dividing the wafer in a state bonded to the film adhesive into a plurality of semiconductor elements;
a step of picking up a laminate comprising an adhesive piece formed by separating the film-like adhesive into pieces and the semiconductor element from the pressure-sensitive adhesive layer;
a step of pressing the laminate against the member;
The manufacturing method including the process of hardening the said adhesive bond piece by heat processing. A film adhesive made of a thermosetting resin composition, comprising:
Film adhesive with a surface free energy value E ₁ of 38 to 41 mJ/m ^{2 .} 6. The method of claim 5,
The content rate of the liquid epoxy resin at 25 degreeC is 5-40 mass % based on the total mass of the epoxy resin contained in the said thermosetting resin composition, The film adhesive. 7. The method according to claim 5 or 6,
The said thermosetting resin composition contains the epoxy resin which has an alicyclic structure, a hardening|curing agent, and an elastomer, the film adhesive. 8. The method of claim 7,
The content of the epoxy resin having an alicyclic structure is 5 to 30% by mass based on the total mass of the epoxy resin contained in the thermosetting resin composition, the film adhesive. 9. The method according to claim 7 or 8,
wherein the curing agent is a phenol resin. 10. The method according to any one of claims 7 to 9,
The film-like adhesive, wherein the elastomer is an acrylic resin. 11. The method according to any one of claims 5 to 10,
The film adhesive in which the said thermosetting resin composition contains an inorganic filler. 12. The method according to any one of claims 5 to 11,
The film adhesive in which the said thermosetting resin composition contains a hardening accelerator. The film adhesive according to any one of claims 5 to 12;
An adhesive film provided with the base film provided on one surface of the said film adhesive. A dicing die-bonding integrated film comprising the film adhesive according to any one of claims 5 to 12, an adhesive layer, and a base film, and these are laminated in this order. 15. The method of claim 14,
A dicing die-bonding integrated film further comprising a protective film provided to cover the film-like adhesive.

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